Radiation-emitting semiconductor component

Patent metadata

Field	Value
Publication number	US-9842972-B2
Application number	US-201013516848-A
Country	US
Kind code	B2
Filing date	Dec 13, 2010
Priority date	Dec 21, 2009
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength λ 1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength λ 2 , which is greater than the first wavelength λ 1 .

First claim

The invention claimed is:

1. A radiation-emitting semiconductor component comprising:
a semiconductor body having an active layer which, during operation, emits electromagnetic radiation having a first wavelength λ 1 in a main radiation direction,
a luminescence conversion layer formed from a glass, a glass ceramic or a ceramic, and a refractive index n 1 and which converts at least part of the emitted radiation into radiation having a second wavelength λ 2 greater than the first wavelength λ i , and
a functional layer that improves angle dependence of the emitted radiation,
wherein the functional layer 1) succeeds the active layer in the main radiation direction and contains a glass, a ceramic, a glass ceramic or sapphire, and 2) has a surface structuring, wherein the surface structuring has a periodic structure, and the periodic structure has a period d and the functional layer has a refractive index n 2 , π/λ 2 <G<n 2 2π/λ 2 , where G=2π/d in a one-dimensional periodic structure and G=4π/√3 in a two-dimensional hexagonal or periodic structure, and wherein Δn=|n 2 −n 1 |≦0.1.

2. The radiation-emitting semiconductor component according to claim 1 , wherein the functional layer succeeds the luminescence conversion layer in the main radiation direction.

3. The radiation-emitting semiconductor component according to claim 1 , wherein the luminescence conversion layer has a refractive index n i and the functional layer has a refractive index n 2 , where n 2 ≦n 1 holds true.

4. The radiation-emitting semiconductor component according to claim 1 , wherein the functional layer comprises aluminum oxide, aluminum oxynitride, magnesium-aluminum spinel, silicon dioxide, silicon oxynitride, quartz glass, amorphous germanium oxide (GeO 2 ), soda-lime glass, silicate glass, borosilicate glass or a spin-on glass.

5. The radiation-emitting semiconductor component according to claim 1 , wherein no connecting layer is arranged between the functional layer and the luminescence conversion layer.

6. The radiation-emitting semiconductor component according to claim 1 , wherein the surface structuring has a depth of 100 nm to 10 μm.

7. The radiation-emitting semiconductor component according to claim 1 , wherein the functional layer comprises pores or scattering particles.

8. The radiation-emitting semiconductor component according to claim 1 , wherein the luminescence conversion layer comprises neither pores nor scattering particles.

9. The radiation-emitting semiconductor component according to claim 7 , wherein the functional layer comprises at least two partial layers, and concentrations of the scattering particles in the partial layers decrease from partial layer to partial layer in the main radiation direction.

10. The radiation-emitting semiconductor component according to claim 1 , wherein the functional layer comprises at least two partial layers, and refractive indices in the partial layers decrease from partial layer to partial layer in the main radiation direction.

Assignees

• Bergenek Krister
• Ahlstedt Mikael
• Liepold Ute
• Osram Opto Semiconductors Gmbh

Inventors

• Bergenek Krister
• Ahlstedt Mikael
• Liepold Ute

Classifications

• H01L33/58

  Electricity · mapped topic

• H01L33/025

  Electricity · mapped topic

• H01L2924/0002

  Electricity · mapped topic

• H01L33/50 Primary

  Electricity · mapped topic

• H01L33/20

  Electricity · mapped topic