Method of forming a semiconductor device structure and semiconductor device structure

Patent metadata

Field	Value
Publication number	US-9842845-B1
Application number	US-201615337441-A
Country	US
Kind code	B1
Filing date	Oct 28, 2016
Priority date	Oct 28, 2016
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

The present disclosure provides a semiconductor device structure including a non-volatile memory (NVM) device structure in and above a first region of a semiconductor substrate and a logic device formed in and above a second region of the semiconductor substrate different from the first region. The NVM device structure includes a floating-gate, a first select gate and at least one control gate. The logic device includes a logic gate disposed on the second region and source/drain regions provided in the second region adjacent to the logic gate. The control gate extends over the floating-gate and the first select gate is laterally separated from the floating-gate by an insulating material layer portion. Upon forming the semiconductor device structure, the floating gate is formed before forming the control gate and the logic device.

First claim

What is claimed:

1. A method of forming a semiconductor device structure, the method comprising:
forming a non-volatile memory (NVM) device structure in and above a first region of a semiconductor substrate, said NVM device structure comprising a floating gate, a first select gate, and at least one control gate, wherein said control gate extends over said floating gate, and wherein said first select gate is laterally separated from said floating gate by an insulating material layer portion, said first select gate and said control gate comprising first and second gate electrode portions of a contiguous and integral gate electrode material; and
forming a logic device in and above a second region of said semiconductor substrate different from said first region, wherein said logic device comprises a logic gate disposed on said second region and source/drain regions provided in said second region adjacent said logic gate;
wherein said floating gate is formed before forming said control gate and said logic device.

2. The method of claim 1 , wherein said forming said NVM device structure comprises forming an inter poly dielectric (IPD) over said floating gate prior to forming said control gate.

3. The method of claim 2 , wherein forming said IPD comprises forming said IPD over said first and second regions, and removing said IPD over said second region.

4. The method of claim 3 , further comprising patterning said IPD over said first region, wherein said patterned IPD covers said floating gate and said select gate.

5. The method of claim 2 , wherein forming said IPD comprises depositing a layer stack comprising an oxide material and a nitride material, said nitride material being embedded into said oxide material.

6. The method of claim 2 , further comprising:
exposing an upper surface portion of said first region adjacent said floating gate after said IPD is formed; and
subsequently forming said control gate over said first region and said logic gate over said second region in parallel.

7. The method of claim 6 , wherein forming said control gate and said logic gate comprises successively depositing at least one gate dielectric material layer and a gate electrode material layer over said first and second regions, and patterning said deposited material layers over said first and second regions.

8. The method of claim 7 , wherein said patterned deposited material layers over said second region comprise a first portion of patterned material layers extending over said floating gate and a second portion of patterned material layers extending over said exposed upper surface portion, said first portion implementing said control gate and said second portion implementing a second select gate.

9. The method of claim 8 , further comprising forming a contact structure contacting said control gate, wherein said contact structure simultaneously contacts said second select gate.

10. The method of claim 1 , wherein forming said NVM device structure comprises forming a second select gate laterally adjacent to said floating gate, a further insulating material layer portion separating said second select gate from said floating gate, wherein said control gate does not extend over said second select gate.

11. A method of forming a semiconductor device structure, the method comprising:
forming a non-volatile memory (NVM) device structure in and above a first region of a semiconductor substrate, said NVM device structure comprising a first floating gate, a first select gate, and a first control gate, wherein said first control gate extends over said first floating gate and said first select gate is laterally separated from said first floating gate by an insulating material layer portion, said first floating gate being formed before said first control gate, wherein forming said NVM device structure comprises:
forming an insulating material layer over said first region and over a second region of said semiconductor substrate that is different from said first region;
patterning said insulating material layer over said first region, wherein patterning said insulating material layer comprises etching first and second trenches into said insulating material layer; and
forming a layer stack comprising a gate dielectric material and a polysilicon material within each of said trenches, said first floating gate and said first select gate being formed in said respective first and second trenches;

after forming said first floating gate, forming a logic device in and above said second region, wherein said logic device comprises a logic gate disposed on said second region and source/drain regions provided in said second region adjacent said logic gate.

12. The method of claim 11 , wherein patterning said insulating material layer over said first region further comprises:
etching at least third and fourth trenches into said insulating material layer;
forming said layer stack comprising said gate dielectric material and said polysilicon material within each of said at least said third and fourth trenches, wherein a second floating gate and a second select gate are formed in said respective third and fourth trenches; and
forming a second control gate over said first region, said second control gate extending over said second floating gate.

13. The method of claim 12 , further comprising forming an inter poly dielectric (IPD) over said first and second floating gates prior to forming said first and second control gates.

14. The method of claim 13 , wherein forming said IPD comprises forming said IPD over said first and second regions, and removing said IPD over said second region.

15. The method of claim 14 , further comprising patterning said IPD over said first region, wherein said patterned IPD covers said first and second floating gates and said first and second select gates.

16. The method of claim 13 , further comprising:
exposing a first upper surface portion of said first region adjacent said first floating gate and exposing a second upper surface portion of said first region adjacent said second floating gate prior to said forming of said IPD; and
subsequently forming said first and second control gates over said first region and said logic gate over said second region in parallel.

17. The method of claim 16 , wherein forming said first and second control gates and said logic gate comprises successively depositing at least one gate dielectric material layer and a gate electrode material layer over said first and second regions, and patterning said deposited material layers over said first and second regions.

18. A semiconductor device structure, comprising:
a non-volatile memory (NVM) device structure formed in and above a first region of a semiconductor substrate, said NVM device structure comprising a floating gate, a first select gate, a second select gate and at least one control gate, wherein said control gate extends over said floating gate but not over said first select gate, wherein said first and second select gates are laterally separated from said floating gate by respective insulating material layer portions disposed at opposing sides of said floating gate, and wherein said control gate and said second select gate comprise first and second gate electrode portions of a contiguous and integral gate electrode material; and
a logic device formed in and above a second region of said semiconductor substrate different from said first region, wherein said logic device comprises a logic gate disposed on said second region and source/drain regions provided in said second region adjace

Assignees

• Globalfoundries Inc

Inventors

• Melde Thomas
• Richter Ralf

Classifications

• H10P50/283

  by chemical means · CPC title

• H10D64/01306

  the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon · CPC title

• H01L29/66825

  Electricity · mapped topic

• H01L21/28035

  Electricity · mapped topic

• H01L29/4916

  Electricity · mapped topic