Semiconductor structure including a nonvolatile memory cell and method for the formation thereof

Patent metadata

Field	Value
Publication number	US-9634017-B1
Application number	US-201514959382-A
Country	US
Kind code	B1
Filing date	Dec 4, 2015
Priority date	Dec 4, 2015
Publication date	Apr 25, 2017
Grant date	Apr 25, 2017

Abstract

A semiconductor structure includes a nonvolatile memory cell including a first nonvolatile bit storage element and a second nonvolatile bit storage element which have a common source region provided in a semiconductor material and a common control gate structure. Each nonvolatile bit storage element includes a drain region, a channel region, a select gate structure, a floating gate structure and an erase gate structure. The channel region has a select gate side portion and a floating gate side portion. The select gate structure is provided at the select gate side portion of the channel region and the floating gate structure is provided at the floating gate side portion of the channel region. The erase gate structure is provided above the select gate structure and adjacent the floating gate structure. The control gate structure extends above the floating gate structures of the first and second nonvolatile bit storage elements.

First claim

What is claimed:

1. A semiconductor structure, comprising:
a nonvolatile memory cell comprising a first nonvolatile bit storage element and a second nonvolatile bit storage element, said first and second nonvolatile bit storage elements having a common source region provided in a semiconductor material and a common control gate structure, each of said first and second nonvolatile bit storage elements comprising:
a drain region and a channel region provided in said semiconductor material, said channel region having a select gate side portion and a floating gate side portion;
a select gate structure at said select gate side portion of said channel region;
a floating gate structure at said floating gate side portion of said channel region; and
an erase gate structure above said select gate structure and adjacent said floating gate structure;
wherein said floating gates for said first and second nonvolatile bit storage elements are separated by an isolation region, said floating gates for said first and second nonvolatile bit storage elements isolation structure have coplanar upper surfaces, and said common control gate structure is disposed on said coplanar upper surfaces and extends above said floating gate structures of said first and second nonvolatile bit storage elements.

2. The semiconductor structure of claim 1 , wherein said select gate structure is provided in a trench formed in said semiconductor material.

3. The semiconductor structure of claim 1 , wherein at least one of said erase gate structure, said select gate structure and said control gate structure comprises an electrically conductive metal.

4. The semiconductor structure of claim 1 , wherein each of said erase gate structure, said select gate structure and said control gate structure comprises said electrically conductive metal, said electrically conductive metal comprising tungsten.

5. The semiconductor structure of claim 1 , wherein said control gate structure comprises a portion above said source region.

6. The semiconductor structure of claim 1 , wherein said erase gate structure of said first nonvolatile bit storage element and said erase gate structure of said second nonvolatile bit storage element are arranged on opposite sides of said source region.

7. The semiconductor structure of claim 1 , wherein each of said first and second nonvolatile bit storage elements comprises a tunnel layer arranged at a side of said floating gate structure facing said erase gate structure.

8. The semiconductor structure of claim 1 , further comprising circuitry comprising at least one of a logic circuit and a static random access memory circuit, said circuitry comprising:
a field effect transistor, said field effect transistor comprising one of a high-k metal gate structure and a polysilicon silicon oxynitride gate structure;
wherein said high-k metal gate structure comprises a gate insulation layer comprising a high-k dielectric material having a greater dielectric constant than silicon dioxide and a gate electrode comprising a metal; and
wherein said polysilicon silicon oxynitride gate structure comprises a gate insulation layer comprising silicon oxynitride and a gate electrode comprising polysilicon.

9. A semiconductor structure, comprising:
a plurality of static random access memory cells, each of said plurality of static random access memory cells having a bitline connection node and an inverse bitline connection node; and
a plurality of nonvolatile memory cells, each of said plurality of nonvolatile memory cells comprising a first nonvolatile bit storage element and a second nonvolatile bit storage element, said first and second nonvolatile bit storage elements having a common source region provided in a semiconductor material and a common control gate structure, each of said first and second nonvolatile bit storage elements comprising:
a drain region and a channel region provided in said semiconductor material, said channel region having a select gate side portion and a floating gate side portion;
a select gate structure provided in a trench in said semiconductor material at said select gate side portion of said channel region;
a floating gate structure at said floating gate side portion of said channel region; and
an erase gate structure above said select gate structure and adjacent said floating gate structure;
wherein said floating gates for said first and second nonvolatile bit storage elements are separated by an isolation region, said floating gates for said first and second nonvolatile bit storage elements isolation structure have coplanar upper surfaces, and said common control gate structure extends above said floating gate structures of said first and second nonvolatile bit storage elements;
wherein each of said bitline connection nodes and said inverse bitline connection nodes of said plurality of static random access memory cells is coupled to a drain region of a respective one of said nonvolatile bit storage elements of said plurality of nonvolatile memory cells; and
wherein said semiconductor structure comprises a drive circuit for performing a storage operation wherein a data bit indicative of a respective voltage at each of said bitline connection nodes and said inverse bitline connection nodes is stored in said one of said nonvolatile bit storage elements associated therewith and a recall operation wherein a respective voltage at each of said bitline connection nodes and said inverse bitline connection nodes is set on the basis of said data bit stored in said one of said nonvolatile bit storage elements associated therewith.

10. The semiconductor structure of claim 9 , wherein at least one of said erase gate structure, said select gate structure and said control gate structure comprises an electrically conductive metal.

11. The semiconductor structure of claim 9 , wherein each of said erase gate structure, said select gate structure and said control gate structure comprises said electrically conductive metal, said electrically conductive metal comprising tungsten.

12. The semiconductor structure of claim 9 , wherein said control gate structure comprises a portion above said source region.

13. The semiconductor structure of claim 9 , wherein said erase gate structure of said first nonvolatile bit storage element and said erase gate structure of said second nonvolatile bit storage element are arranged on opposite sides of said source region.

14. The semiconductor structure of claim 9 , wherein each of said first and second nonvolatile bit storage elements comprises a tunnel layer arranged at a side of said floating gate structure facing said erase gate structure.

15. The semiconductor structure of claim 9 , further comprising circuitry comprising at least one of a logic circuit and a static random access memory circuit, said circuitry comprising:
a field effect transistor, said field effect transistor comprising one of a high-k metal gate structure and a polysilicon silicon oxynitride gate structure;
wherein said high-k metal gate structure comprises a gate insulation layer comprising a high-k dielectric material having a greater dielectric constant than silicon dioxide and a gate electrode comprising a metal; and
wherein said polysilicon silicon oxynitride gate structure comprises a gate insulation layer comprising silicon oxynitride and a gate electrode comprising polysilicon.

Assignees

• Globalfoundries Inc

Inventors

• Baars Peter
• Thees Hans-Juergen

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title