Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

Patent metadata

Field	Value
Publication number	US-9842738-B2
Application number	US-201415302287-A
Country	US
Kind code	B2
Filing date	Apr 9, 2014
Priority date	Apr 9, 2014
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A method of manufacturing a silicon carbide semiconductor device is provided. The method suppresses the increase in the number of manufacturing steps and is capable of suppressing the degradation of ohmic characteristics of an alloy layer with respect to a semiconductor substrate. The method includes a step of forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide; a step of forming a metal nitride film obtained by nitriding a second metal on the metal layer; a step of directing a laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and a step of forming an electrode on the metal nitride film.

First claim

The invention claimed is:

1. A method of manufacturing a silicon carbide semiconductor device, the method comprising:
forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide;
forming a metal nitride film obtained by nitriding a second metal on the metal layer;
directing a laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and
forming an electrode on the metal nitride film,
wherein a surface reflectivity of the metal nitride film when the laser light is directed is lower than a surface reflectivity when the laser light is directed in the absence of a film on the metal layer.

2. The method according to claim 1 , wherein
the metal nitride film is made of titanium nitride.

3. The method according to claim 1 , wherein
the semiconductor substrate is made of n type silicon carbide, and
the first metal is nickel.

4. The method according to claim 1 , wherein
the metal nitride film has a thickness of not greater than 500 nm.

5. The method according to claim 1 , wherein
the laser light has a wavelength of 355 nm or 532 nm, and
the metal nitride film has a thickness of not greater than 500 nm.

6. A method of manufacturing a silicon carbide semiconductor device, the method comprising:
forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide;
forming a diffusion layer made of a second metal on the metal layer;
forming a metal nitride film obtained by nitriding a third metal on the second metal;
directing laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and
forming an electrode on the metal nitride film.

7. The method according to claim 6 , wherein
the second metal is the same metal as the third metal.

8. The method according to claim 6 , wherein
the metal nitride film is made of titanium nitride.

9. The method according to claim 6 , wherein
the semiconductor substrate is made of n type silicon carbide, and
the first metal is nickel.

10. The method according to claim 6 , wherein
the metal nitride film has a thickness of not greater than 500 nm.

11. The method according to claim 10 , wherein
the metal nitride film has a thickness of 20 o 30 nm.

12. A silicon carbide semiconductor device, comprising:
a semiconductor substrate made of silicon carbide;
an alloy layer provided on the semiconductor substrate and made of an alloy of silicon carbide and a first metal;
a diffusion layer provided on the alloy layer and made of a second metal;
a metal nitride film provided on the diffusion layer and made of a nitride of a third metal; and
an electrode provided on the metal nitride film.

13. The silicon carbide semiconductor device according to claim 12 , wherein the second metal is the same metal as the third metal.

14. The silicon carbide semiconductor device according to claim 13 , wherein the metal nitride film is made of titanium nitride.

15. The silicon carbide semiconductor device according to claim 12 , wherein a surface reflectivity of the metal nitride film for light having a wavelength of 355 nm or 532 nm is lower than that of the metal layer for light having a wavelength of 355 nm or 532 nm.

16. The silicon carbide semiconductor device according to claim 12 , wherein
the semiconductor substrate is made of n type silicon carbide, and
the first metal is nickel.

17. The silicon carbide semiconductor device according to claim 12 , wherein the metal nitride film has a thickness of not greater than 500 nm.

18. The silicon carbide semiconductor device according to claim 17 , wherein the metal nitride film has a thickness in the range of 20 to 30 nm.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakanishi Yosuke
• Okabe Hiroaki
• YOSHIDA Motoru
• Sugahara Kazuyuki
• Tominaga Takaaki

Classifications

• H10P14/3408

  Silicon carbide · CPC title

• H10D64/0115

  to silicon carbide · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/983

  Reinforcing structures, e.g. collars · CPC title

• H10D8/051

  of Schottky diodes · CPC title