Fabrication method of silicon carbide semiconductor apparatus and silicon carbide semiconductor apparatus fabricated thereby

Patent metadata

Field	Value
Publication number	US-9768260-B2
Application number	US-201314388729-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Mar 30, 2012
Publication date	Sep 19, 2017
Grant date	Sep 19, 2017

Abstract

Process (A) of preparing a silicon carbide substrate of a first conductivity type; process (B) of forming an epitaxial layer of the first conductivity type on one principal surface of the silicon carbide substrate; process (C) of forming on another principal surface of the silicon carbide substrate, a first metal layer; process (D) of heat treating the silicon carbide substrate after the process (C) to form an ohmic junction between the first metal layer and the other principal surface of the silicon carbide substrate, and a layer of a substance ( 10 ) highly cohesive with another metal on the first metal layer; and a process (E) of removing impurities and cleaning a surface of the first metal layer ( 8 ) on the other principal surface of the silicon carbide substrate (D), are performed. The heat treatment at process (D) is executed at a temperature of 1,100 degrees C. or more.

First claim

The invention claimed is:

1. A method of fabricating a silicon carbide semiconductor apparatus, comprising:
a process (A) of preparing a silicon carbide substrate of a first conductivity type;
a process (B) of forming an epitaxial layer of the first conductivity type on one principal surface of the silicon carbide substrate;
a process (C) of forming on another principal surface of the silicon carbide substrate, a first metal layer including nickel (Ni) and any one or more of metals of a group IV, V, or VI;
a process (D) of executing heat treatment for the silicon carbide substrate after the process (C) to form an ohmic junction between the first metal layer and the other principal surface of the silicon carbide substrate, and a layer of a substance highly cohesive with another metal on the first metal layer; and
a process (E) of removing impurities and cleaning a surface of the first metal layer on the other principal surface of the silicon carbide substrate after the process (D), wherein
the heat treatment at the process (D) is executed at a temperature of 1,120 degrees C. or more; and
a time period for maintaining the heat treatment at the process (D) is one second or more and one hour or less.

2. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
the first metal layer is a layer of nickel (Ni) and titanium (Ti).

3. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
a highest temperature for the heat treatment at the process (D) is 1,100 degrees C. or more and 1,350 degrees C. or less.

4. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
a temperature increase rate of the heat treatment at the process (D) is 0.5 degrees C./second or more and 20 degrees C./second or less.

5. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
the layer of the substance highly cohesive with another metal is formed by a layer partially remaining on the first metal layer.

6. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
the layer of the substance highly cohesive with another metal is formed by a three-element compound including titanium carbide or titanium, and silicon and carbon (TixSiyCz).

7. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
at the process (E), a bias sputtering method of removing impurities and cleaning up by causing ions to collide therewith is used.

8. The method of fabricating a silicon carbide semiconductor apparatus according to claim 7 , wherein
the ions are ionized argon (Ar).

9. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , further comprising
between the processes (D) and (E), a process (F) of forming a second metal layer on the epitaxial layer of the one principal surface of the silicon carbide substrate.

10. The method of fabricating a silicon carbide semiconductor apparatus according to claim 9 , further comprising
a process (G) of forming a Schottky junction between the second metal layer and the epitaxial layer by executing heat treatment for the silicon carbide substrate at a temperature of 1,000 degrees C. or less.

11. The method of fabricating a silicon carbide semiconductor apparatus according to claim 10 , wherein
a highest temperature of the heat treatment at the process (G) is 400 degrees C. or more and 600 degrees C. or less.

12. The method of fabricating a silicon carbide semiconductor apparatus according to claim 10 , wherein
a time period for maintaining the heat treatment at the process (G) is one minute or longer and 30 minutes or less.

13. The method of fabricating a silicon carbide semiconductor apparatus according to claim 10 , wherein
a temperature increase rate of the heat treatment at the process (G) is 1 degree C./second or greater and 10 degrees C./second or less.

14. The method of fabricating a silicon carbide semiconductor apparatus according to claim 9 , further comprising
between the processes (B) and (C), a process (H) of selectively forming a second conductivity type region in a region to be a lower portion of a region having the second metal layer formed therein of the epitaxial layer.

15. The method of fabricating a silicon carbide semiconductor apparatus according to claim 14 , wherein
at the process (H), the second conductivity type region is disposed in a stripe-like layout.

16. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
the epitaxial layer is formed on a (0001) surface of the silicon carbide substrate.

17. The method of fabricating a silicon carbide semiconductor apparatus according to claim 1 , wherein
the epitaxial layer is formed on a (000-1) surface of the silicon carbide substrate.

18. A silicon carbide semiconductor apparatus manufactured according to the method of fabricating according to claim 1 , wherein
a rate of carbon atoms each having a bond with any one of metals of the group IV, V, or VI is 25% or greater of all the atoms in the layer of the substance highly cohesive with another metal formed on the first metal layer.

19. The silicon carbide semiconductor apparatus according to claim 18 , wherein
a rate of carbon atoms each having a Ti—C bond is 25% or more of all the atoms.

Assignees

• Fuji Electric Co Ltd

Inventors

• Kinoshita Akimasa
• Tsuji Takashi
• Fukuda Kenji

Classifications

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P14/3466

  Crystal orientation · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10D64/0123 Primary

  to silicon carbide · CPC title

• H10D64/0115

  to silicon carbide · CPC title