Method for forming conductive mesh pattern, and mesh electrode and laminate manufactured thereby

Patent metadata

Field	Value
Publication number	US-9841669-B2
Application number	US-201515111435-A
Country	US
Kind code	B2
Filing date	Feb 13, 2015
Priority date	Feb 13, 2014
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

The present invention relates to a method for manufacturing a conductive mesh pattern, a mesh electrode manufactured by the same, and a laminate.

First claim

The invention claimed is:

1. A method for manufacturing a conductive mesh pattern, comprising:
a) forming a first photosensitive material layer on a conductive layer of a base substrate including the conductive layer;
b) forming a first photosensitive material pattern layer by making a transparent photomask, in which linear patterns are carved, be in contact with an upper surface of the first photosensitive material layer;
c) forming a second photosensitive material layer on the conductive layer provided with the first photosensitive material pattern layer;
d) making the transparent photomask, in which the linear patterns are carved, be in contact with an upper surface of the second photosensitive material layer, so that the linear pattern of the first photosensitive material pattern layer crosses the linear pattern of the transparent photomask to form a second photosensitive material pattern layer on the conductive layer;
e) etching portions of the conductive layer on which the first photosensitive material pattern layer and the second photosensitive material pattern layer are not formed; and
f) removing the first photosensitive material pattern layer and the second photosensitive material pattern layer to manufacture conductive mesh patterns.

2. The method of claim 1 , further comprising:
after step d), forming a third photosensitive material layer on the conductive layer on which the first photosensitive material pattern layer and the second photosensitive material pattern layer are formed; and
forming a third photosensitive material pattern layer on the conductive layer.

3. The method of claim 1 , wherein a line width of the linear pattern of the transparent photomask is 2 μm or more and 500 μm or less.

4. The method of claim 1 , wherein a line width of the conductive mesh pattern is 100 nm or more and 900 nm or less.

5. The method of claim 1 , wherein the conductive layer includes at least one metal of silver (Ag), copper (Cu), aluminum (Al), gold (Au), nickel (Ni), titanium (Ti), molybdenum (Mo), tungsten (W), chrome (Cr), and platinum (Pt), or an alloy of two or more metals thereof.

6. The method of claim 1 , wherein the conductive layer includes a transparent metal oxide.

7. The method of claim 1 , wherein the conductive layer includes at least one of an indium tin oxide (ITO), an indium zinc oxide (IZO), an aluminum zinc oxide (AZO), an indium zinc tin oxide (IZTO), an aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO), an indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), an indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO), and an indium zinc tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO).

8. The method of claim 1 , wherein the transparent photomask includes at least one of polydimethylsiloxane (PDMS)-based polymer, polymethyl methacrylate (PMMA), polyurethane acrylate (PUA), polystyrene (PS), polycarbonate (PC), polyvinyl alcohol (PVA), cyclicolefin copolymer (COP), polyethylene terephthalate (PET), and polyvinyl butadiene (PVB), or a copolymer thereof.

9. The method of claim 1 , wherein a thickness of the conductive layer is 5 nm or more and 10 μm or less.

10. The method of claim 1 , wherein a thickness of each of the first photosensitive material layer and the second photosensitive material layer is 0.01 μm or more and 10 μm or less.

11. The method of claim 1 , wherein steps b) and d) respectively include irradiating ultraviolet rays having intensity of 10 mJ/cm 2 or more and 200 mJ/cm 2 or less onto the transparent photomask after making the transparent photomask be in contact with the upper surface of the first photosensitive material layer or the second photosensitive material layer.

12. The method of claim 1 , wherein in step a), a method of forming the conductive layer includes thermal deposition, sputtering, electro-beam deposition, a lamination processing method, or a solution coating method.

13. A mesh electrode comprising a conductive mesh pattern having a line width of 100 nm or more and 900 nm or less manufactured by the method of claim 1 .

14. The mesh electrode of claim 13 , wherein the conductive mesh pattern includes at least one metal of silver (Ag), copper (Cu), aluminum (Al), gold (Au), nickel (Ni), titanium (Ti), molybdenum (Mo), tungsten (W), chrome (Cr), and platinum (Pt), or an alloy of two or more metals thereof.

15. The mesh electrode of claim 11 , wherein the conductive mesh pattern includes at least one of an indium tin oxide (ITO), an indium zinc oxide (IZO), an aluminum zinc oxide (AZO), an indium zinc tin oxide (IZTO), an aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO), an indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), an indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO), and an indium zinc tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO).

16. A laminate, comprising:
a base substrate;
a conductive layer provided on the base substrate;
first photosensitive material linear patterns provided on the conductive layer; and
second photosensitive material linear patterns provided on the conductive layer and crossing the first photosensitive material linear patterns.

17. The laminate of claim 16 , further comprising:
third photosensitive material linear patterns provided on the conductive layer.

18. The laminate of claim 16 , wherein line widths of the first photosensitive material linear pattern and the second photosensitive material linear pattern is respectively 100 nm or more and 900 nm or less.

19. The laminate of claim 16 , wherein the conductive layer includes at least one metal of silver (Ag), copper (Cu), aluminum (Al), gold (Au), nickel (Ni), titanium (Ti), molybdenum (Mo), tungsten (W), chrome (Cr), and platinum (Pt), or an alloy of two or more metals thereof.

20. The laminate of claim 16 , wherein the conductive layer includes at least one of an indium tin oxide (ITO), an indium zinc oxide (IZO), an aluminum zinc oxide (AZO), an indium zinc tin oxide (IZTO), an aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO), an indium zinc oxide-silver-indium zinc oxide (IZO-Ag-IZO), an indium tin oxide-silver-indium tin oxide (ITO-Ag-ITO), and an indium zinc tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO).

Assignees

• Lg Chemical Ltd

Inventors

• Park Jeongho
• Shin Bu Gon
• Kim Jae Jin
• Lee Jongbyung
• Jung Jinmi
• Jeong Yujin

Classifications

• C23C14/185 Primary

  by cathodic sputtering · CPC title

• G03F1/68

  Preparation processes not covered by groups G03F1/20 - G03F1/50 · CPC title

• G06F2203/04112

  Electrode mesh in capacitive digitiser: electrode for touch sensing is formed of a mesh of very fine, normally metallic, interconnected lines that are almost invisible to see. This provides a quite large but transparent electrode surface, without need for ITO or similar transparent conductive material · CPC title

• C23C14/221

  Ion beam deposition (C23C14/46, C23C14/48 take precedence) · CPC title

• G03F1/50 Primary

  Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof · CPC title