Laser processing method and laser processing apparatus

US9837315B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9837315-B2
Application numberUS-201414587677-A
CountryUS
Kind codeB2
Filing dateDec 31, 2014
Priority dateSep 13, 2000
Publication dateDec 5, 2017
Grant dateDec 5, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of manufacturing a semiconductor device comprising the steps of: irradiating a substrate with a pulsed laser light at a converging point within the substrate, so that the converging point of the pulsed laser light is positioned within the substrate to form a modified spot within the substrate at the converging point; and performing the irradiating step at multiple locations along each of a plurality of intersecting cutting lines along which the substrate is to be cut to form a plurality of modified spots within the substrate at converging points of the pulsed laser light, respectively, without melting a pulsed laser light incident surface of the substrate, the modified spots each having a modified region, the modified spots being formed intermittently along each of the plurality of intersecting cutting lines, the modified spots are formed in the substrate only by the laser irradiation converging within the substrate; and cutting the substrate into parts by dry processing along the plurality of intersecting cutting lines by growing cracks from the modified spots to grow towards a front and a back surface of the substrate, without causing modifications to be formed in the front and back surfaces of the substrate other than the cracks cutting the substrate into parts. 2. The method according to claim 1 , wherein the step of cutting the substrate into the parts by the dry processing along the plurality of intersecting cutting lines includes deforming a sheet supporting the substrate and applying stress to the substrate to cut and separate the substrate on the sheet into the parts to obtain at least one manufactured semiconductor device. 3. The method according to claim 1 , wherein the plurality of intersecting cutting lines include first cutting lines and second cutting lines, the second cutting lines cross the first cutting lines, and after formation of the modified regions has been performed, the substrate is cut into at least one piece having a chip shape. 4. The method according to claim 2 , wherein the first lines are arranged in parallel to each other and the second lines are arranged in parallel to each other so that the first and second lines form a grid-like pattern. 5. The method according to claim 1 , wherein the modified spots comprise cracks. 6. The method according to claim 1 , wherein the modified spots comprise a refractive index changing region. 7. The method according to claim 1 , wherein the substrate is made of mono-crystal material.

Assignees

Inventors

Classifications

  • used during dicing or grinding · CPC title

  • Wafer tapes, e.g. grinding or dicing support tapes · CPC title

  • H10P54/00Primary

    Cutting or separating of wafers, substrates or parts of devices · CPC title

  • the sheet {or ribbon} being in a horizontal position · CPC title

  • taking account of the properties of the material involved · CPC title

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Frequently asked questions

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What does patent US9837315B2 cover?
A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the insid…
Who is the assignee on this patent?
Hamamatsu Photonics Kk
What technology area does this patent fall under?
Primary CPC classification H10P54/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).