PZT precursor solution, method for producing PZT precursor solution, method for producing PZT film, method for producing electromechanical transducer element, and method for producing liquid discharge head

Patent metadata

Field	Value
Publication number	US-9834853-B2
Application number	US-201615382952-A
Country	US
Kind code	B2
Filing date	Dec 19, 2016
Priority date	Jan 22, 2016
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

A PZT precursor solution is used for forming a PZT film by a sol-gel method. The PZT precursor solution includes a solvent; a component that forms a crystal of PZT by crystallization, the component being dissolved in the solvent; and an element that inhibits crystal growth of PZT, the element being dissolved in the solvent.

First claim

What is claimed is:

1. A lead zirconate titanate (PZT) precursor solution to be used for forming a PZT film by a sol-gel method, the PZT precursor solution comprising:
a solvent;
a component that forms PZT by crystallization, the component being dissolved in the solvent; and
an element that inhibits crystal growth of PZT, the element being dissolved in the solvent.

2. The PZT precursor solution according to claim 1 , wherein the element contains at least one of chlorine, sulfur, and hafnium.

3. A method for producing a lead zirconate titanate (PZT) film, the method comprising:
forming a coating film by applying a PZT precursor solution including a solvent, a component that forms PZT by crystallization, the component being dissolved in the solvent, and an element that inhibits crystal growth of PZT, the element being dissolved in the solvent;
forming an amorphous film by heating the coating film at a predetermined temperature; and
forming the PZT film by heating a multilayer amorphous film obtained by repeating the forming of the coating film and the forming of the amorphous film a first predetermined number of times at a temperature higher than the predetermined temperature to crystalize the multilayer amorphous film.

4. The method for producing the PZT film according to claim 3 , further comprising:
thickening the crystalized PZT film by repeating the forming of the crystalized PZT film a second predetermined number of times.

5. A method for producing an electromechanical transducer element, the method comprising:
forming a lower electrode;
forming a lead zirconate titanate (PZT) film as an electromechanical transducer film on the lower electrode by the method for producing the PZT film according to claim 3 ; and
forming an upper electrode on the PZT film.

6. A method for producing a liquid discharge head, the method comprising:
forming an oscillation plate on a substrate;
forming an electromechanical transducer element on the oscillation plate by the method for producing the electromechanical transducer element according to claim 5 ;
forming a pressure chamber in the substrate; and
bonding the substrate to a nozzle plate.

7. A method for producing a lead zirconate titanate (PZT) precursor solution to be used for forming a PZT film by a sol-gel method, the method comprising:
dissolving a component that forms PZT by crystallization in a solvent; and
adding an element that inhibits crystal growth of PZT to the solvent.

8. The method according to claim 7 , wherein the element is added to the solvent while a concentration of the element is controlled to be within a predetermined concentration range.

9. The method according to claim 7 , wherein the element is at least one of chlorine, sulfur, and hafnium.

10. The method according to claim 7 , wherein the component that forms PCT by crystallization includes lead carboxylate, a zirconium alkoxide compound, and a titanium alkoxide compound, and
wherein the element is introduced through the zirconium alkoxide compound.

Assignees

• Akiyama Yoshikazu
• Shimofuku Akira
• Ueda Keiji
• Ricoh Co Ltd

Inventors

• Akiyama Yoshikazu
• Shimofuku Akira
• Ueda Keiji

Classifications

• C23C18/1254

  Sol or sol-gel processing · CPC title

• C23C18/1216

  Metal oxides (C23C18/1212 takes precedence) · CPC title

• B41J2/1645

  thin film formation by spincoating · CPC title

• B41J2/1646

  thin film formation by sputtering · CPC title

• C23C14/24

  Vacuum evaporation · CPC title