Quantum dot SOA-silicon external cavity multi-wavelength laser

Patent metadata

Field	Value
Publication number	US-9831635-B2
Application number	US-201615237833-A
Country	US
Kind code	B2
Filing date	Aug 16, 2016
Priority date	Nov 20, 2013
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A hybrid external cavity multi-wavelength laser using a QD RSOA and a silicon photonics chip is demonstrated. Four lasing modes at 2 nm spacing and less than 3 dB power non-uniformity were observed, with over 20 mW of total output power. Each lasing peak can be successfully modulated at 10 Gb/s. At 10 −9 BER, the receiver power penalty is less than 2.6 dB compared to a conventional commercial laser. An expected application is the provision of a comb laser source for WDM transmission in optical interconnection systems.

First claim

What is claimed is:

1. An optical cavity, comprising:
a substrate;
an output optical port configured to output an optical output beam including a plurality of different, spaced-apart selected wavelength channels;
a first partial reflector comprising a submicron waveguide on said substrate at a first end of the optical cavity optically coupled to the output port, said first partial reflector comprising a first transmittance and a first reflectivity, for passing a portion of light in the optical cavity as the optical output beam and reflecting a portion of the light back into the optical cavity;
an optical gain element configured to amplify the light at the plurality of selected wavelength channels; and
a filter element on said substrate having multiple passbands configured to pass light at the plurality of selected wavelength channels therethrough, and to reflect light at wavelengths other than the plurality of selected wavelength channels away from the optical gain element; and
a second reflector at a second end of the optical cavity, the second reflector comprising a second transmittance and a second reflectivity for reflecting the plurality of selected wavelength channels back through the optical gain element.

2. The optical cavity of claim 1 , wherein the optical gain element comprises an optical gain medium provided in a gain cavity on the substrate.

3. The optical cavity of claim 2 , wherein the second reflector comprises a submicron waveguide on the substrate in the form of a Sagnac loop mirror.

4. The optical cavity of claim 1 , wherein the first partial reflector and the filter element are provided on the substrate comprising a first half-cavity chip; and
wherein the optical gain element comprises a semiconductor optical amplifier (SOA) provided on a second half-cavity chip coupled to the first half-cavity chip.

5. The optical cavity of claim 4 , further comprising a waveguide coupler for coupling the first half-cavity chip to the second half-cavity chip;
wherein the waveguide coupler comprises a silicon waveguide with a gradually tapering down width coupled to a silicon nitride waveguide with a gradually increasing width.

6. The optical cavity of claim 4 , wherein the second reflector comprises a facet on the SOA.

7. The optical cavity of claim 5 , wherein the facet includes a reflective optical coating.

8. The optical cavity of claim 4 , wherein said SOA comprises a quantum dot reflective semiconductor optical amplifier.

9. The optical cavity of claim 1 , wherein said first partial reflector comprises a Sagnac loop mirror.

10. The optical cavity of claim 9 , wherein said first reflectance increases as the wavelength of light increases.

11. The optical cavity of claim 1 , wherein said first reflectance decreases as the wavelength of light increases.

12. The optical cavity of claim 1 , wherein said first reflectance is constant as the wavelength of light increases.

13. The optical cavity of claim 9 , wherein said first partial reflector is configured to be adjustable for adjusting the first reflectance and transmittance.

14. The optical cavity of claim 1 , wherein said filter element includes an FSR matching a laser mode spacing of the plurality of selected wavelength channels.

15. The optical cavity of claim 14 , wherein the laser mode spacing is between 1 nm and 8 nm.

16. The optical cavity of claim 14 , wherein said filter element comprises a micro-ring based filter.

17. The optical cavity of claim 15 , wherein said filter element comprises a thermally tunable filter.

18. The optical cavity of claim 1 , wherein said first reflectance is between 35% and 65% of the light in the optical cavity.

19. The optical cavity of claim 1 , wherein said second reflectance is greater than 95% of the light in the optical cavity.

20. The optical cavity of claim 1 , wherein said substrate comprises silicon; and
wherein the first partial reflector and the filter element comprise silicon on insulator.

Assignees

• Coriant Advanced Tech Llc
• Elenion Tech Llc

Inventors

• Zhang Yi
• Yang Shuyu
• Hochberg Michael J
• Baehr-Jones Thomas Wetteland

Classifications

• H01S5/06804

  by monitoring an external parameter, e.g. temperature · CPC title

• H01S5/343

  in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser} · CPC title

• H01S5/141 Primary

  using a wavelength selective device, e.g. a grating or etalon (H01S5/146 takes precedence) · CPC title

• H01S3/005

  Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping (shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B) · CPC title

• H01S5/021 Primary

  Silicon based substrates · CPC title