Two-terminal reversibly switchable memory device

Patent metadata

Field	Value
Publication number	US-9831425-B2
Application number	US-201514844805-A
Country	US
Kind code	B2
Filing date	Sep 3, 2015
Priority date	Feb 6, 2004
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.

First claim

What is claimed is:

1. An apparatus, comprising:
a first electrode;
a second electrode; and
a memory element (ME) comprising tantalum, the memory element positioned between the first and second electrodes, the ME electrically coupled in series with the first and second electrodes, the ME comprising:
a first ion reservoir comprising mobile oxygen ions, the first ion reservoir in contact with the first electrode;
a tunnel barrier in contact with the first ion reservoir, the tunnel barrier made from a material that is an electrolyte to the mobile oxygen ions and is permeable by the mobile oxygen ions responsive to a first voltage applied across the first and second electrodes, and wherein the tunnel barrier is coupled in series with the first ion reservoir; and
a second reservoir in contact with the tunnel barrier and positioned between the second electrode and the tunnel barrier, the second reservoir operative as a repository for the mobile oxygen ions.

2. The apparatus of claim 1 , wherein the ME has an electrical conductivity that can be reversibly switched between a first conductivity and a second conductivity that is greater than the first conductivity as a function of mobile oxygen ion migration.

3. The apparatus of claim 1 , wherein the mobile oxygen ions in the first ion reservoir are operative to change a conductivity of the first ion reservoir from a relatively high conductivity to a relatively low conductivity when the mobile oxygen ions are transported into the tunnel barrier or from a relatively low conductivity to a relatively high conductivity when the mobile oxygen ions are transported back into the first ion reservoir.

4. The apparatus of claim 1 , wherein the first voltage is operative to generate a first electric field in the tunnel barrier and a second electric field in the first ion reservoir, the first electric field having a greater magnitude than the second electric field and the first electric field extending into the first ion reservoir by a distance of at least one Debye length.

5. The apparatus of claim 1 , further comprising:
a line coupled to the first electrode; and
a component coupled to the line, the component configured to energize the line to apply a second voltage across the first and second electrodes, the second voltage operative to generate a read current having a magnitude that is indicative of a present conductivity of the ME, wherein applying the second voltage is non-destructive to the present conductivity of the ME.

6. The apparatus of claim 5 , wherein a magnitude of the second voltage is less than a magnitude of the first voltage.

7. The apparatus of claim 5 , wherein a polarity of the second voltage is different than a polarity of the first voltage.

8. The apparatus of claim 5 , wherein the present conductivity is indicative of stored data.

9. The apparatus of claim 8 , wherein the stored data is retained in an absence of electrical power.

10. The apparatus of claim 5 , wherein the first voltage is applied as a voltage pulse.

11. The apparatus of claim 5 , wherein the second voltage is applied as a voltage pulse.

12. The apparatus of claim 1 , the ME comprises a tantalum oxide compound.

13. The apparatus of claim 12 , wherein the tantalum oxide comprises tantalum pentoxide.

14. The apparatus of claim 1 , wherein at least a portion of the tantalum of the ME is located in the tunnel barrier.

15. The apparatus of claim 1 , wherein at least a portion of the tantalum of the ME is located in the second reservoir.

16. An apparatus, comprising:
a first electrode;
a second electrode; and
a memory element (ME) positioned between the first and second electrodes, the ME electrically coupled in series with the first and second electrodes, the ME comprising:
a first ion reservoir comprising mobile ions, the first ion reservoir coupled with the first electrode; and
a tunnel barrier coupled with the first ion reservoir and the second electrode, wherein the tunnel barrier to allow the mobile ions of the first ion reservoir to tunnel through the tunnel barrier responsive to a first voltage applied across the first electrode and the second electrode, and wherein the tunnel barrier is coupled in series with the first ion reservoir.

17. The apparatus of claim 16 , wherein the ME comprises a tantalum oxide compound.

18. The apparatus of claim 16 , wherein the ME comprises tantalum, wherein at least a portion of the tantalum of the ME is located in the tunnel barrier.

19. The apparatus of claim 16 , further comprising a second reservoir in contact with the tunnel barrier and positioned between the second electrode and the tunnel barrier, the second reservoir operative as a repository for the mobile ions, wherein the ME comprises tantalum, wherein at least a portion of the tantalum of the ME is located in the second reservoir.

20. The apparatus of claim 16 , further comprising:
a line coupled to the first electrode; and
a component coupled to the line, the component configured to energize the line to apply a second voltage across the first and second electrodes, the second voltage operative to generate a read current having a magnitude that is indicative of a present conductivity of the ME, wherein applying the second voltage is non-destructive to the present conductivity of the ME; and
wherein at least one of the first voltage or the second voltage is applied as a voltage pulse.

Assignees

• Unity Semiconductor Corp

Inventors

• Rinerson Darrell
• Chevallier Christophe J
• Kinney Wayne
• Lambertson Roy
• Sanchez Jr John E
• Schloss Lawrence
• Swab Philip
• Ward Edmond

Classifications

• G11C2213/79

  Array wherein the access device being a transistor · CPC title

• G11C2213/11

  Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites · CPC title

• G11C13/0069

  Writing or programming circuits or methods · CPC title

• G11C2213/71

  Three dimensional array · CPC title

• G11C2213/31

  Material having complex metal oxide, e.g. perovskite structure · CPC title