Metal oxide semiconductor cell device architecture with mixed diffusion break isolation trenches

Patent metadata

Field	Value
Publication number	US-9831272-B2
Application number	US-201615264560-A
Country	US
Kind code	B2
Filing date	Sep 13, 2016
Priority date	Mar 31, 2016
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A standard cell IC includes pMOS transistors in a pMOS region of a MOS device. The pMOS region extends between a first cell edge and a second cell edge opposite the first cell edge. The standard cell IC further includes nMOS transistors in an nMOS region of the MOS device. The nMOS region extends between the first cell edge and the second cell edge. The standard cell IC further includes at least one single diffusion break located in an interior region between the first cell edge and the second cell edge that extends across the pMOS region and the nMOS region to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions. The standard cell IC includes a first double diffusion break portion at the first cell edge. The standard cell IC further includes a second double diffusion break portion at the second cell edge.

First claim

What is claimed is:

1. A standard cell integrated circuit, comprising:
a plurality of p-type metal oxide semiconductor (MOS) (pMOS) transistors in a pMOS region of the standard cell integrated circuit, the pMOS region extending between a first cell edge and a second cell edge opposite the first cell edge;
a plurality of n-type MOS (nMOS) transistors in an nMOS region of the standard cell integrated circuit, the nMOS region extending between the first cell edge and the second cell edge;
at least one single diffusion break located in an interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions;
a first double diffusion break portion extending at the first cell edge; and
a second double diffusion break portion extending at the second cell edge.

2. The standard cell integrated circuit of claim 1 , wherein the standard cell integrated circuit has n grids with pitch p between the grids, and a width of approximately n*p, the grids extending across the pMOS region and the nMOS region, and wherein:
each of the at least one single diffusion break extends along a different one of the n grids located in the interior region,
the first double diffusion break portion extends along the first cell edge between the first cell edge and a first grid located approximately p/2 from the first cell edge, and
the second double diffusion break portion extends along the second cell edge between the second cell edge and a second grid located approximately p/2 from the second cell edge.

3. The standard cell integrated circuit of claim 2 , wherein gate interconnects for the pMOS transistors and the nMOS transistors extend along a subset of the n grids.

4. The standard cell integrated circuit of claim 3 , wherein the gate interconnects have a width g, each of the at least one single diffusion break has a width of approximately g, and each of the first double diffusion break portion and the second double diffusion break portion has a width of approximately p/2, where p is greater than g.

5. The standard cell integrated circuit of claim 1 , wherein each of the at least one single diffusion break, the first double diffusion break portion, and the second double diffusion break portion comprises a shallow trench isolation (STI) region.

6. The standard cell integrated circuit of claim 5 , wherein a depth of each STI region of the first double diffusion break portion and the second double diffusion break portion is greater than a depth of each STI region of the at least one single diffusion break.

7. The standard cell integrated circuit of claim 1 , wherein each of the first double diffusion break portion and the second double diffusion break portion is approximately half of a width of a full double diffusion break.

8. The standard cell integrated circuit of claim 1 , wherein the plurality of pMOS transistors include a first subset of pMOS transistors and a second subset of pMOS transistors, the plurality of nMOS transistors include a first subset of nMOS transistors and a second subset of nMOS transistors, the first subset of pMOS transistors and the first subset of nMOS transistors provide first logic functionality, the second subset of pMOS transistors and the second subset of nMOS transistors provide second logic functionality, the first functionality and the second functionality are separated by an internal node, and one single diffusion break of the at the least one single diffusion break isolates diffusion regions for the first logic functionality and the second logic functionality at the internal node.

9. The standard cell integrated circuit of claim 8 , wherein the first logic functionality outputs to the second logic functionality, the second logic functionality has an output node, and the output node is adjacent one of the first cell edge or the second cell edge.

10. A standard cell integrated circuit, comprising:
a plurality of p-type metal oxide semiconductor (MOS) (pMOS) transistors in a pMOS region of the standard cell integrated circuit, the pMOS region extending between a first cell edge and a second cell edge opposite the first cell edge;
a plurality of n-type MOS (nMOS) transistors in an nMOS region of the standard cell integrated circuit, the nMOS region extending between the first cell edge and the second cell edge,
a first means for isolating diffusion regions located in an interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region, the first means for isolating diffusion regions being configured to separate the pMOS region into pMOS subregions and the nMOS region into nMOS subregions, a width of the first means for isolating diffusion regions being approximately g;
a second means for isolating diffusion regions extending at the first cell edge, a width of the second means for isolating diffusion regions being approximately p/2, p being greater than g; and
a third means for isolating diffusion regions extending at the second cell edge, a width of the third means for isolating diffusion regions being approximately p/2.

11. The standard cell integrated circuit of claim 10 , wherein:
the first means for isolating diffusion regions is at least one single diffusion break located in the interior region between the first cell edge and the second cell edge and extending across the pMOS region and the nMOS region to separate the pMOS region into the pMOS subregions and the nMOS region into the nMOS subregions;
the second means for isolating diffusion regions is a first double diffusion break portion extending at the first cell edge; and
the third means for isolating diffusion regions is a second double diffusion break portion extending at the second cell edge.

12. The standard cell integrated circuit of claim 11 , wherein the standard cell integrated circuit has n grids with pitch p between the grids, and a width of approximately n*p, the grids extending across the pMOS region and the nMOS region, and wherein:
each of the at least one single diffusion break extends along a different one of the n grids located in the interior region,
the first double diffusion break portion extends along the first cell edge between the first cell edge and a first grid located approximately p/2 from the first cell edge, and
the second double diffusion break portion extends along the second cell edge between the second cell edge and a second grid located approximately p/2 from the second cell edge.

13. The standard cell integrated circuit of claim 12 , wherein gate interconnects for the pMOS transistors and the nMOS transistors extend along a subset of the n grids.

14. The standard cell integrated circuit of claim 13 , wherein the gate interconnects have a width g.

15. The standard cell integrated circuit of claim 11 , wherein each of the at least one single diffusion break, the first double diffusion break portion, and the second double diffusion break portion comprises a shallow trench isolation (STI) region.

16. The standard cell integrated circuit of claim 15 , wherein a depth of each STI region of the first double diffusion break portion and the second double diffusion break portion is greater than a depth of each STI region of the at least one single diffusion break.

17. The standard cell integrated circuit of claim 11 , wherein each of the first double diffusion break portion and the second double diffusion break portion is approximately half of a width of a full double diffusion

Assignees

• Qualcomm Inc

Inventors

• Chen Xiangdong
• Boynapalli Venugopal
• Sahu Satyanarayana
• Lim Hyeokjin
• Gupta Mukul

Classifications

• H01L2027/11829

  Electricity · mapped topic

• H01L27/11807 Primary

  Electricity · mapped topic

• H01L2027/11866

  Electricity · mapped topic

• H01L29/0649

  Electricity · mapped topic

• H01L29/0642

  Electricity · mapped topic