Cavity formation in semiconductor devices

Patent metadata

Field	Value
Publication number	US-9831192-B2
Application number	US-201615154583-A
Country	US
Kind code	B2
Filing date	May 13, 2016
Priority date	May 15, 2015
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.

First claim

What is claimed is:

1. A method for fabricating a radio-frequency device, the method comprising:
providing a field-effect transistor formed over an oxide layer formed on a semiconductor substrate;
removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer;
applying a substrate contact layer to the backside of the oxide layer;
applying a sacrificial material to the backside of the oxide layer;
applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material; and
removing at least a portion of the sacrificial material to form a radiofrequency isolation cavity between the backside of the oxide layer and the interface material, the substrate contact layer being at least partially exposed in the radio-frequency isolation cavity.

2. The method of claim 1 further comprising applying a replacement substrate layer to the interface material to provide mechanical stability for the radio-frequency device.

3. The method of claim 1 wherein said applying the sacrificial material involves forming a channel of the sacrificial material leading to a die boundary associated with the radio-frequency device.

4. The method of claim 3 wherein said removing the at least a portion of the sacrificial material is performed at least partially through the channel.

5. The method of claim 1 wherein said removing the at least a portion of the sacrificial material involves evaporating the at least a portion of the sacrificial material.

6. The method of claim 1 further comprising removing a handle wafer from a front-side of a passivation layer disposed over the field-effect transistor.

7. The method of claim 1 wherein the sacrificial material comprises nitride.

8. A radio-frequency device comprising:
a field-effect transistor implemented over an oxide layer;
a patterned form of sacrificial material disposed on a backside of the oxide layer;
a substrate contact layer disposed on the backside of the oxide layer in physical contact with the form of sacrificial material; and
an interface layer covering at least a portion of the backside of the oxide layer and the form of sacrificial material, the interface layer and the form of sacrificial material being positioned to allow for removal of the form of sacrificial material to form a radio-frequency isolation cavity between the backside of the oxide layer and the interface layer.

9. The radio-frequency device of claim 8 wherein the form of sacrificial material includes a channel leading to an edge of a die associated with the radio-frequency device.

10. The radio-frequency device of claim 9 wherein the form of sacrificial material is patterned to allow for removal of the form of sacrificial material through evaporation by applying heat to the channel.

11. The radio-frequency device of claim 8 further comprising a replacement substrate layer applied to the interface layer, the replacement substrate layer providing mechanical stability for the radio-frequency device.

12. The radio-frequency device of claim 8 wherein the patterned form of sacrificial material includes a channel leading to a die boundary associated with the radio-frequency device.

13. The radio-frequency device of claim 8 wherein the field-effect transistor is part of a switching device.

14. The radio-frequency device of claim 8 wherein the form of sacrificial material comprises low-density oxide.

15. A wireless device comprising:
a transceiver configured to process radio-frequency signals;
a radio-frequency module in communication with the transceiver, the radio-frequency module including a switching device having a field-effect transistor implemented over an oxide layer, the switching device further including a patterned form of sacrificial material disposed on a backside of the oxide layer, a substrate contact layer disposed on the backside of the oxide layer in physical contact with the form of sacrificial material, and an interface layer covering at least a portion of the backside of the oxide layer and the form of sacrificial material, the interface layer and the form of sacrificial material being positioned to allow for removal of the form of sacrificial material to form a radio-frequency isolation cavity between the backside of the oxide layer and the interface layer; and
an antenna in communication with the radio-frequency module, the antenna configured to facilitate transmitting of the radio-frequency signals.

16. The wireless device of claim 15 wherein the radio-frequency module further includes a replacement substrate layer applied to the interface layer.

17. The wireless device of claim 15 wherein the patterned form of sacrificial material includes a channel leading to a die boundary associated with the radio-frequency module.

18. The wireless device of claim 17 wherein the channel is dimensioned to allow for removal of at least a portion of the form of sacrificial material through evaporation through the channel.

19. A radio-frequency module comprising:
a packaging substrate configured to receive a plurality of devices; and
a switching device mounted on the packaging substrate, the switching device including a field-effect transistor implemented over an oxide layer, the switching device further including a patterned form of sacrificial material disposed on a backside of the oxide layer, and an interface layer covering at least a portion of the backside of the oxide layer and the form of sacrificial material, the interface layer and the form of sacrificial material being positioned to allow for removal of the form of sacrificial material to form a radio-frequency isolation cavity between the backside of the oxide layer and the interface layer.

Assignees

• Skyworks Solutions Inc

Inventors

• Petzold David T
• Whitefield David Scott

Classifications

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10W20/218

  in silicon-on-insulator [SOI] wafers · CPC title

• H10W70/63

  Vias, e.g. via plugs · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title