Plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-9831064-B2
Application number	US-201414526900-A
Country	US
Kind code	B2
Filing date	Oct 29, 2014
Priority date	Nov 5, 2013
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A plasma processing apparatus can control a ratio between an input power during a pulse-on period and an input power during a pulse-off period by a matching operation of a matching device provided on a high frequency transmission line for supplying the high frequency power as a continuous wave without a power modulation. An impedance sensor 96 A provided in a matching device of a plasma generation system includes a RF voltage detector 100 ; a voltage-detection-signal generating circuit 102 ; an arithmetic-average-value calculating circuit 104 ; a weighted-average-value calculating circuit 106 ; and a moving-average-value calculating unit 108 of a voltage sensor system, and also includes a RF electric current detector 110 ; an electric current-detection-signal generating circuit 112 ; an arithmetic-average-value calculating circuit 114 ; a weighted-average-value calculating circuit 116 ; a moving-average-value calculating unit 118 ; and an impedance calculating circuit 120 of an electric current sensor system.

First claim

We claim:

1. A plasma processing apparatus of generating plasma by high frequency discharge of a processing gas within a decompression processing vessel that accommodates therein a processing target object, which is loaded into and unloaded from the processing vessel, and performing a process on the processing target object within the processing vessel under the plasma, the plasma processing apparatus comprising:
a first high frequency power supply configured to output a first high frequency power;
a first high frequency transmission line configured to transmit the first high frequency power outputted from the first high frequency power supply to a first electrode provided within or in the vicinity of the processing vessel;
a first matching device, having a variable reactance element provided on the first high frequency transmission line and a first impedance sensor configured to measure a load impedance on the first high frequency transmission line with respect to the first high frequency power supply, configured to control a reactance of the variable reactance element such that a load impedance measurement value outputted from the first impedance sensor is equal to or approximate to a matching point corresponding to an output impedance of the first high frequency power supply;
a second high frequency power supply configured to output a second high frequency power;
a second high frequency transmission line configured to transmit the second high frequency power outputted from the second high frequency power supply to the first electrode or a second electrode provided within or in the vicinity of the processing vessel; and
a power modulation unit configured to pulse-modulate an output of the second high frequency power supply with a pulse such that a pulse-on period during which the second high frequency power is turned on or has a first level and a pulse-off period during which the second high frequency power is turned off or has a second level lower than the first level are repeated alternately at a regular frequency,
wherein the first impedance sensor outputs the load impedance measurement value corresponding to a weighted average value obtained by weighted-averaging an average value of the load impedance during the pulse-on period and an average value of the load impedance during the pulse-off period with a preset weighted value independent from a duty ratio of the pulse.

2. The plasma processing apparatus of claim 1 ,
wherein the first impedance sensor comprises:
a first arithmetic-average-value calculating circuit configured to, in each cycle of the pulse, sample voltage detection signals corresponding to the first high frequency power obtained on the first high frequency transmission line during the pulse-on period with a preset sampling frequency and calculate an arithmetic average value of the voltage detection signals during the pulse-on period, and, also, configured to sample voltage detection signals obtained on the first high frequency transmission line during the pulse-off period with the preset sampling frequency and calculate an arithmetic average value of the voltage detection signals during the pulse-off period;
a second arithmetic-average-value calculating circuit configured to, in each cycle of the pulse, sample electric current detection signals corresponding to the first high frequency power obtained on the first high frequency transmission line during the pulse-on period with the preset sampling frequency and calculate an arithmetic average value of the electric current detection signals during the pulse-on period, and, also, configured to sample electric current detection signals obtained on the first high frequency transmission line during the pulse-off period with the preset sampling frequency and calculate an arithmetic average value of the electric current detection signals during the pulse-off period;
a first weighted-average-value calculating circuit configured to calculate a weighted average value of the voltage detection signals for a single cycle by weighted-averaging the arithmetic average value of the voltage detection signals during the pulse-on period and the arithmetic average value of the voltage detection signals during the pulse-off period obtained from the first arithmetic-average-value calculating circuit;
a second weighted-average-value calculating circuit configured to calculate a weighted average value of the electric current detection signals for the single cycle by weighted-averaging the arithmetic average value of the electric current detection signals during the pulse-on period and the arithmetic average value of the electric current detection signals during the pulse-off period obtained from the second arithmetic-average-value calculating circuit;
a first moving-average-value calculating circuit configured to calculate a moving weighted average value of the voltage detection signals based on multiple consecutive weighted average values of the voltage detection signals for the single cycle obtained from the first weighted-average-value calculating circuit;
a second moving-average-value calculating circuit configured to calculate a moving weighted average value of the electric current detection signals based on multiple consecutive weighted average values of the electric current detection signals for the single cycle obtained from the second weighted-average-value calculating circuit; and
an impedance calculating circuit configured to calculate a moving weighted average value of the load impedance by dividing the moving weighted average value of the voltage detection signals obtained from the first moving-average-value calculating circuit by the moving weighted average value of the electric current detection signals obtained from the second moving-average-value calculating circuit,
wherein the moving weighted average value of the load impedance obtained from the impedance calculating circuit is outputted as the load impedance measurement value.

3. The plasma processing apparatus of claim 2 ,
wherein the first arithmetic-average-value calculating circuit and the second arithmetic-average-value calculating circuit sample the voltage detection signals and the electric current detection signals, respectively, during a first monitoring time set within the pulse-on period and calculate the arithmetic average value of the voltage detection signals during the pulse-on period and the arithmetic average value of the electric current detection signals during the pulse-on period, respectively, and, also, sample the voltage detection signals and the electric current detection signals, respectively, during a second monitoring time set within the pulse-off period and calculate the arithmetic average value of the voltage detection signals during the pulse-off period and the arithmetic average value of the electric current detection signals during the pulse-off period, respectively.

4. The plasma processing apparatus of claim 3 ,
wherein at least one of the first monitoring time and the second monitoring time does not include a first transient time in the pulse-on period immediately after the pulse-on period is started.

5. The plasma processing apparatus of claim 3 ,
wherein at least one of the first monitoring time and the second monitoring time does not include a second transient time in the pulse-on period immediately before the pulse-on period is ended.

6. The plasma processing apparatus of claim 1 ,
wherein the first impedance sensor comprises:
a first arithmetic-average-value calculating circuit configured to, in each cycle of the pulse, sample voltage detection signals corresponding to the first high frequency power obtained on the first high frequency transmission line during the pulse-on period with a preset sampling frequency and calculate an ari

Assignees

• Tokyo Electron Ltd
• Daihen Corp

Inventors

• Konno Hiroo
• Shimomoto Takashi

Classifications

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title

• H01J37/32155

  Frequency modulation · CPC title

• H01J37/32926

  Software, data control or modelling · CPC title

• H01J2237/327

  Arrangements for generating the plasma · CPC title

• H01J37/32146 Primary

  Amplitude modulation, includes pulsing · CPC title