Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor

Patent metadata

Field	Value
Publication number	US-9829805-B2
Application number	US-201615357085-A
Country	US
Kind code	B2
Filing date	Nov 21, 2016
Priority date	Mar 14, 2013
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A photoresist vapor deposition system includes: a vacuum chamber having a heating element and cooled chuck for holding a substrate, the vacuum chamber having a heated inlet; and a vapor deposition system connected to the heated inlet for volatilizing a precursor into the vacuum chamber for condensing a photoresist over the substrate cooled by the cooled chuck. The deposition system creates a semiconductor wafer system that includes: a semiconductor wafer; and a vapor deposited photoresist over the semiconductor wafer. An extreme ultraviolet lithography system requiring the semiconductor wafer system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for imaging the light from the extreme ultraviolet light source; and a wafer stage for placing a semiconductor wafer with a vapor deposited photoresist.

First claim

What is claimed is:

1. An extreme ultraviolet lithography system comprising:
an extreme ultraviolet light source;
a mirror for directing light from the extreme ultraviolet light source;
a reticle stage for imaging the light from the extreme ultraviolet light source on to an extreme ultraviolet mask; and
a wafer stage for placing a semiconductor wafer coated with a vapor deposited
photoresist for receiving the light from the reticle stage, the vapor deposited photoresist having a top and a bottom and a different photoresist composition between the top and the bottom of the vapor deposited photoresist, the bottom being more absorbing of EUV photons from EUV radiation in a wavelength range of from 7 nanometers to 40 nanometers than the top.

2. The system as claimed in claim 1 wherein the vapor deposited photoresist is a volatile metal oxide.

3. The system as claimed in claim 1 wherein the vapor deposited photoresist includes a number of ligands and a number of metal atoms, and there is a controlled ratio of the number of ligands to the number of metal atoms to control a photoresist property.

4. The system as claimed in claim 1 wherein the vapor deposited photoresist contains a ligand.

5. The system as claimed in claim 1 wherein the vapor deposited photoresist is a ligand around a metal center.

6. The system as claimed in claim 1 wherein the vapor deposited photoresist is a ligand bonded with a metal oxide.

7. A semiconductor wafer system comprising:
a semiconductor wafer; and
a vapor deposited photoresist over the semiconductor wafer, the vapor deposited photoresist having a top and a bottom and a different photoresist composition between the top and the bottom of the vapor deposited photoresist, the bottom being more absorbing of EUV photons from EUV radiation in a wavelength range of from 7 nanometers to 40 nanometers than the top.

8. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist is a volatile metal oxide.

9. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist includes a number of ligands and a number of metal atoms, and there is a controlled ratio of the number of ligands to the number of metal atoms to control a photoresist property.

10. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist includes a ligand.

11. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist is a ligand around a metal center.

12. The semiconductor wafer system as claimed in claim 7 wherein the vapor deposited photoresist is a ligand bonded with a metal oxide.

Assignees

• Applied Materials Inc

Inventors

• Michaelson Timothy
• Weidman Timothy W
• Chin Barry Lee
• Foad Majeed
• Deaton Paul

Classifications

• G03F7/2037

  Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation · CPC title

• G03F7/70716 Primary

  Stages · CPC title

• G03F7/167 Primary

  from the gas phase, by plasma deposition (G03F7/2035 takes precedence) · CPC title

• G03F7/09

  characterised by structural details, e.g. supports, auxiliary layers (supports for printing plates in general B41N) · CPC title