Bonded structure and production method therefor

Patent metadata

Field	Value
Publication number	US-9824900-B2
Application number	US-201214440124-A
Country	US
Kind code	B2
Filing date	Nov 9, 2012
Priority date	Nov 9, 2012
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

The deterioration of the resin base materials in the bonded structure is prevented. In a bonded structure containing two base materials at least one of which is a resin, an oxide which contains either P or Ag, V, and Te, and are formed by softening on the two base materials, bond the two base materials. In addition, in a method for producing a bonded structure containing two base materials at least one of which is a resin containing: supplying an oxide containing either P or Ag, V, and Te to the base material; and applying electromagnetic waves to the oxide, whereby the oxide, which soften on the substrates, bond the two base material.

First claim

The invention claimed is:

1. A bonded structure comprising:
two base materials, at least one of which is a resin, and
an oxide formed of lead-free glass containing V, Te, and Ag softened on the two base materials to bond the two base materials, wherein
the oxide contains V 2 O 5 , TeO 2 , and Ag 2 O, and any of Fe, Sb, W, Ba, and K, and an oxide mass % of V 2 O 5 + an oxide mass % of TeO 2 + an oxide mass % of Ag 2 O is greater than or equal to 85 mass % and less than 100 mass % of a total mass of the oxide, wherein the oxide further comprises filler mixed with the oxide and providing the oxide with an adjusted thermal expansion coefficient, wherein the two base materials have different thermal expansion coefficients, and the adjusted thermal expansion coefficient of the oxide adjacent one of the base materials having a higher thermal expansion coefficient has a higher thermal expansion coefficient than the adjusted thermal expansion coefficient of the oxide adjacent the other of the base materials having a lower thermal expansion coefficient.

2. The bonded structure according to claim 1 , wherein the oxide has a transition point of 340° C. or lower.

3. The bonded structure according to claim 1 , wherein the oxide has a transition point of 270° C. or lower.

4. The bonded structure according to claim 1 , wherein the oxide mass % of V 2 O 5 ≧25 mass % of the total mass of the oxide, and the oxide mass % of Ag 2 O ≦30 mass % of the total mass of the oxide.

5. The bonded structure according to claim 1 , wherein the filler contains any of SiO 2 , ZrO 2 , Al 2 O 3 , Nb 2 O 5 , ZrSiO 4 , Zr 2 (WO 4 )(PO 4 ) 2 , cordierite, mullite, and eucryptite.

6. The bonded structure according to claim 1 , wherein the oxide is softened by irradiation of electromagnetic waves.

7. The bonded structure according to claim 6 , wherein the electromagnetic waves are produced by a laser having a wavelength of 2000 nm or less, or a microwave having a wavelength of 0.1 to 1000 mm.

8. The bonded structure according to claim 1 , wherein 5 to 50 vol % of a resin additive is dispersed in the oxide.

9. A method for producing a bonded structure comprising two base materials, at least one of which is a resin, comprising:
supplying oxide formed of lead-free glass containing V, Te, and Ag to the base materials, wherein the oxide contains V 2 O 5 , Te 0 2 , and Ag 2 O, and any of Fe, Sb, W, Ba, and K, and an oxide mass % of V 2 O 5 + an oxide mass % of TeO 2 + an oxide mass % of Ag 2 O is greater than or equal to 85 mass % and less than 100 mass % of a total mass of the oxide, wherein the oxide further comprises filler mixed with the oxide and providing the oxide with an adjusted thermal expansion coefficient, wherein the two base materials have different thermal expansion coefficients, and the adjusted thermal expansion coefficient of the oxide adjacent one of the base materials having a higher thermal expansion coefficient has a higher thermal expansion coefficient than the adjusted thermal expansion coefficient of the oxide adjacent the other of the base materials having a lower thermal expansion coefficient; and
applying electromagnetic waves to the oxide to soften the oxide on the substrate to bond the two base materials.

Assignees

• Hitachi Ltd

Inventors

• Kodama Motomune
• Naito Takashi
• Sawai Yuichi
• Fujieda Tadashi
• Aoyagi Takuya
• Miyagi Masanori

Classifications

• H10W99/00 Primary

  Subject matter not provided for in other groups of this subclass · CPC title

• B32B2457/14

  Semiconductor wafers · CPC title

• B32B2307/54

  Yield strength; Tensile strength · CPC title

• B32B2264/102

  Oxide or hydroxide · CPC title

• H01L21/4807

  Electricity · mapped topic