Scanning coherent diffractive imaging method and system for actinic mask inspection for euv lithography

US2016154301A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016154301-A1
Application numberUS-201414899235-A
CountryUS
Kind codeA1
Filing dateMay 26, 2014
Priority dateJun 17, 2013
Publication dateJun 2, 2016
Grant date

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Abstract

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Reflective and scanning CDI for identifying errors in mask patterns and defects on mask blanks. Providing a set-up for scanning the mask in reflection mode with low and/or high NA. Illuminating the mask pattern with EUV light at 2 to 35°. Detecting the diffracted light beam with a position sensitive detector. Analyzing the detected intensities using ptychographic algorithms and thereby obtaining a high resolution image of the sample of arbitrary patterns. Analyzing the detected intensities for intensity variations deviating from the normal intensity distribution caused by the periodic mask pattern in order to detect defects on the mask. This novel technique may be referred to as differential CDI. For periodically structured masks, a fast inspection can be executed by steps of multiples of period, which should give the same diffraction pattern. The investigation for only the deviation from the normal diffraction pattern allows rapid identification of periodic mask pattern defects.

First claim

Opening claim text (preview).

1 - 2 . (canceled) 3 . A method for reflective and scanning coherent diffractive imaging for identifying errors in mask patterns and defects on mask blanks, the method comprising: a) providing a set-up for scanning a mask in reflection mode with low and high numerical aperture; b) illuminating the mask pattern with a extreme ultraviolet lithography light beam at an angle of 2 to 35°; c) detecting a diffracted light beam with a position-sensitive detector; d) analyzing intensities detected in the detecting step using ptychographic algorithms and thereby obtaining a high resolution image of the sample of arbitrary patterns; and e) analyzing the detected intensities for intensity variations deviating from a normal intensity distribution caused by a periodic mask pattern in order to detect defects on the mask. 4 . A system for differential coherent diffractive imaging for identifying errors in periodic mask patterns, comprising: a) a ptychographic set-up for scanning the mask in reflection mode with low and/or high numerical aperture; b) an extreme ultraviolet lithography light beam for illuminating the mask pattern at an angle of between 2 and 35°; c) a position-sensitive detector for detecting a diffracted light beam; and d) means for analyzing the detected intensities using ptychographic algorithms and thereby obtaining a high resolution image of the sample of arbitrary patterns; and e) means for analyzing the detected intensities for intensity variations that deviate from a normal intensity distribution caused by the periodic mask pattern in order to detect defects on the mask.

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Classifications

  • G03F1/84Primary

    Inspecting · CPC title

  • Reflection masks; Preparation thereof · CPC title

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What does patent US2016154301A1 cover?
Reflective and scanning CDI for identifying errors in mask patterns and defects on mask blanks. Providing a set-up for scanning the mask in reflection mode with low and/or high NA. Illuminating the mask pattern with EUV light at 2 to 35°. Detecting the diffracted light beam with a position sensitive detector. Analyzing the detected intensities using ptychographic algorithms and thereby obtainin…
Who is the assignee on this patent?
Scherrer Inst Paul
What technology area does this patent fall under?
Primary CPC classification G03F1/84. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Jun 02 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).