Monomer, hardmask composition comprising monomer, and pattern forming method using hardmask composition

Patent metadata

Field	Value
Publication number	US-9823566-B2
Application number	US-201314764869-A
Country	US
Kind code	B2
Filing date	May 8, 2013
Priority date	Feb 21, 2013
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition.

In the above Chemical Formula 1,
A, A′ , X, Y, I, m and n are the same as described in the detailed description.

First claim

The invention claimed is:

1. A monomer for a hardmask composition, the monomer being represented by the following Chemical Formula 1:

wherein, in the above Chemical Formula 1,
A is a substituted or unsubstituted polycyclic aromatic group,
A′ is a substituted or unsubstituted C6 to C20 arylene group,
X is an epoxy-containing group,
Y is a hydroxy group, a C1 to C10 alkylamine group, —NH 2 , ═O, or a combination thereof,
I is an integer of 0 to 6, and
m and n are each independently an integer of 1 to 4.

2. The monomer of claim 1 , wherein A is a substituted or unsubstituted one of the following polycyclic aromatic groups:

3. The monomer of claim 1 , wherein A′ is the substituted C6 to C20 arylene group, the substituted C6 to C20 arylene group being substituted with a hydroxy group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C10 alkylamine group, or a combination thereof.

4. The monomer of claim 1 , wherein the monomer is represented by one of the following Chemical Formulae 2 to 5:

wherein, in the above Chemical Formulae 2 to 5, n is an integer of 1 to 4.

5. The monomer of claim 1 , wherein the monomer has a molecular weight of 200 to 5,000.

6. A hard mask composition, comprising:
a monomer represented by the following Chemical Formula 1, and a solvent:

wherein, in the above Chemical Formula 1,
A is a substituted or unsubstituted polycyclic aromatic group,
A′ is a substituted. or unsubstituted C6 to C20 arylene group,
X is an epoxy-containing group,
Y is a hydroxy group, a C1 to C10 alkylamine group, —NH 2 , ═O, or a combination thereof,
I is an integer of 0 to 6, and
m and n are each independently an integer of 1 to 4.

7. The hardmask composition of claim 6 , wherein A is a substituted or unsubstituted one of the following polycyclic aromatic groups.

8. The hardmask composition of claim 6 , wherein A′ is the substituted C6 to C20 arylene group, the substituted C6 to C20 arylene group being substituted with a hydroxy group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C10 alkylamine group, or a combination thereof.

9. The hardmask composition of claim 6 , wherein the monomer is represented by one of the following Chemical Formulae 2 to 5:

wherein, in the above Chemical Formulae 2 to 5, n is an integer of 1 to 4.

10. The hardmask composition of claim 6 , wherein the monomer has a molecular weight of 200 to 5000.

11. The hardmask composition of claim 6 , wherein the monomer is included in the composition in an amount of 0.1 to 50 wt %, based on a total weight of the hardmask composition.

12. A method of forming patterns, the method comprising:
providing a material layer on a substrate,
applying a hardmask composition on the material layer,
heat-treating the hardmask composition to form a hardmask layer,
forming a silicon-containing thin layer on the hardmask layer,
forming a photoresist layer on the silicon-containing thin layer,
exposing and developing the photoresist layer to form a photoresist pattern
selectively removing the silicon-containing thin layer and the hardmask layer using the photoresist pattern to expose a part of the material layer, and
etching an exposed part of the material layer,
wherein the hardmask composition includes;
a monomer represented by the following Chemical Formula 1, and a solvent:

wherein, in the above Chemical Formula 1,
A is a substituted or unsubstituted polycyclic aromatic group,
A′ is a substituted. or unsubstituted C6 to C20 arylene group,
X is an epoxy-containing group,
Y is hydrogen, a hydroxy group, a C1 to C10 alkylamine group, —NH 2 , ═O, or a combination thereof,
I is an integer of 0 to 6, and
m and n are each independently an integer of 1 to 4.

13. The method of claim 12 , wherein applying the hardmask composition includes performing a spin-on coating method.

14. The method of claim 12 , wherein heat-treating the hardmask layer is performed at 100° C. to 500° C.

15. The method of claim 12 , wherein A is a substituted or unsubstituted one of the following polycyclic aromatic groups:

16. The method of claim 12 , wherein A′ is the substituted C6 to C20 arylene group, the substituted C6 to C20 arylene group being substituted with a hydroxy group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C10 alkylamine group, or a combination thereof.

17. The method of claim 12 , wherein the monomer is represented by one of the following Chemical Formulae 2 to 5:

wherein, in the above Chemical Formulae 2 to 5, n is an integer of 1 to 4.

18. The method of claim 12 , wherein the monomer has a molecular weight of 200 to 5000.

19. The method of claim 12 , wherein the monomer is included in the composition in an amount of 0 . 1 to 50 wt %, based on a total weight of the hardmask composition.

20. A monomer for a hardmask composition, the monomer being represented by the following Chemical Formula 1:

wherein, in the above Chemical Formula 1,
A is a substituted or unsubstituted polycyclic aromatic group,
A′ is a substituted C6 to C20 arylene group, the substituted C6 to C20 arylene group being substituted with a hydroxy group, a thionyl group, a thiol group, a cyano group, a substituted or unsubstituted amino group, a substituted or unsubstituted C1 to C10 alkylamine group, or a combination thereof,
X is an epoxy-containing group,
Y is a hydrogen, a hydroxy group, a C1 to C10 alkylamine group, NH2, ═O, or a combination thereof,
I is an integer of 0 to 6, and
m and n are each independently an integer of 1 to 4.

Assignees

• Cheil Ind Inc
• Cheil Ind Inc

Inventors

• Yoon Yong-Woon
• Lee Sung-Jae
• Moon Joon-Young
• Park You-Jung
• Lee Chul-Ho
• Cho Youn-Jin

Classifications

• C07D303/32

  by aldehydo- or ketonic radicals · CPC title

• G03F7/11 Primary

  having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

• C09D163/00

  Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins · CPC title

• C07D303/14 Primary

  by free hydroxyl radicals · CPC title

• C09D7/1233

  Chemistry & Metallurgy · mapped topic