Method for manufacturing heat-resistant composite material

Patent metadata

Field	Value
Publication number	US-9822445-B2
Application number	US-201514621128-A
Country	US
Kind code	B2
Filing date	Feb 12, 2015
Priority date	Aug 17, 2012
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preform 100 accommodated in a reaction furnace 11 for film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnace 11 is used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

First claim

What is claimed is:

1. A method of manufacturing a heat-resistant composite material, which uses chemical vapor deposition or chemical vapor infiltration to cause raw material gas and carrier gas to flow in a reaction furnace accommodating a base material having a microstructure and deposit silicon carbide on the base material for film formation, the method comprising:
determining, according to a film-forming species, whether the film formation follows a first-order reaction or a Langmuir-Hinshelwood rate formula;
further adding additive gas to the raw material gas and carrier gas, the raw material gas including silicon and carbon; and
adjusting the amount of the added additive gas to control growth rate and filling uniformity at the film formation of silicon carbide, by controlling sticking probability of the film-forming species to the base material for the film formation following the first-order reaction, or by controlling so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used for the film formation following the Langmuir-Hinshelwood rate formula,
wherein the additive gas includes at least one of hydrochloride, methane chloride, and hydrocarbon gas, and
using a flow rate of the raw material gas as a reference, a flow rate of hydrochloride relative to the flow rate of the raw material gas is 0.5 or more times the flow rate of the raw material gas, a flow rate of methane chloride relative to the flow rate of the raw material gas is 0.0081 or more times the flow rate of the raw material gas, or a flow rate of hydrocarbon gas relative to the flow rate of the raw material gas is 0.13 or more times the flow rate of the raw material gas.

2. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the growth rate and filling uniformity at the film formation of silicon carbide are optimized.

3. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the amount of the added additive gas is adjusted to control the distribution of growth rate at the film formation of silicon carbide with respect to the position in the reaction furnace.

4. The method of manufacturing a heat-resistant composite material according to claim 3 , wherein the distribution of growth rate is optimized to be uniform.

5. The method of manufacturing a heat-resistant composite material according to claim 3 , wherein the raw material gas is supplied through a plurality of positions located from upstream to downstream in the reaction furnace.

6. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the raw material gas includes at least one of methyltrichlorosilane, dimethyldichlorosilane, and trimethylchlorosilane.

7. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the carrier gas includes at least one of hydrogen, nitrogen, helium, and argon.

8. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the raw material gas is methyltrichlorosilane and a flow rate of acetylene relative to the flow rate of methyltrichlorosilane does not exceed 4.9×10 −1 times the flow rate of methyltrichlorosilane.

9. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the additive gas has an etching operation.

10. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the base material includes at least one of a preform of fibers, a substrate provided with a trench, and a porous substrate.

11. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein the reaction furnace is a hot-wall furnace.

12. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein
the hydrocarbon gas is acetylene or methane, and using the flow rate of the raw material gas as a reference, a flow rate of acetylene relative to the flow rate of the raw material gas is 0.13 or more times the flow rate of the raw material gas, or a flow rate of methane relative to the flow rate of the raw material gas is 0.18 or more times the flow rate of the raw material gas.

13. The method of manufacturing a heat-resistant composite material according to claim 12 , wherein
the raw material gas includes methyltrichlorosilane.

14. The method of manufacturing a heat-resistant composite material according to claim 1 , wherein
the raw material gas includes methyltrichlorosilane.

Assignees

• Ihi Corp
• Univ Tokyo

Inventors

• Nakamura Takeshi
• Ishizaki Masato
• Fuchigami Kenji
• Hotozuka Kozue
• Shimogaki Yukihiro
• Momose Takeshi
• Fukushima Yasuyuki
• Sato Noboru
• Funato Yuichi
• Sugiura Hidetoshi

Classifications

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/325 Primary

  Silicon carbide · CPC title

• C23C16/045

  Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates · CPC title