Solid state catholytes and electrolytes for energy storage devices

Patent metadata

Field	Value
Publication number	US-9819024-B2
Application number	US-201715404179-A
Country	US
Kind code	B2
Filing date	Jan 11, 2017
Priority date	May 15, 2013
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

The present invention provides an energy storage device comprising a cathode region or other element. The device has a major active region comprising a plurality of first active regions spatially disposed within the cathode region. The major active region expands or contracts from a first volume to a second volume during a period of a charge and discharge. The device has a catholyte material spatially confined within a spatial region of the cathode region and spatially disposed within spatial regions not occupied by the first active regions. In an example, the catholyte material comprises a lithium, germanium, phosphorous, and sulfur (“LGPS”) containing material configured in a polycrystalline state. The device has an oxygen species configured within the LGPS containing material, the oxygen species having a ratio to the sulfur species of 1:2 and less to form a LGPSO material. The device has a protective material formed overlying exposed regions of the cathode material to substantially maintain the sulfur species within the catholyte material. Also included is a novel dopant configuration of the Li a MP b S c (LMPS) [M=Si, Ge, and/or Sn] containing material.

First claim

What is claimed:

1. A method of making a catholyte material, comprising providing catholyte precursor materials; ball milling the catholyte precursor materials; annealing the catholyte precursor materials to form a catholyte; and ball milling the catholyte to a median particle size of less than about 1 um and greater than 20 nm; wherein the catholyte precursor materials are selected from LiS, P 2 Ss, SiS 2 , Si, S, and combinations thereof.

2. The method of claim 1 , wherein the annealing is at 500° C. to 600° C.

3. The method of claim 1 , wherein the annealing is at 400° C. to 600° C.

Assignees

• Quantumscape Corp

Inventors

• Chao Cheng-Chieh
• Chen Zhebo
• Holme Tim
• Mayer Marie A
• Riley Jr Gilbert N

Classifications

• C04B2235/446

  Sulfides, tellurides or selenides · CPC title

• C04B35/6262

  of calcined, sintered clinker or ceramics · CPC title

• C04B2235/3203

  Lithium oxide or oxide-forming salts thereof · CPC title

• C04B35/6261

  Milling · CPC title

• C04B2235/447

  Phosphates or phosphites, e.g. orthophosphate or hypophosphite · CPC title