Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US9818617B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9818617-B2 |
| Application number | US-201615372785-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 8, 2016 |
| Priority date | Jun 5, 2014 |
| Publication date | Nov 14, 2017 |
| Grant date | Nov 14, 2017 |
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A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.
Opening claim text (preview).
What is claimed is: 1. A method for providing electroless deposition of a metal layer on a substrate, comprising: exposing the substrate to an electroless metal deposition solution, comprising a metal precursor, first borane containing reducing agent, and a second borane containing reducing agent, wherein the first borane containing reducing agent has a deposition rate that is at least five times a deposition rate of the second borane containing reducing agent, wherein the solution is free of nonborane reducing agents. 2. The method, as recited in claim 1 , wherein the metal precursor comprises at least one of a cobalt precursor, a nickel precursor, a copper precursor, an iron precursor or a palladium precursor. 3. The method, as recited in claim 2 , wherein the first borane containing reducing agent is at least one of tert-butylamine borane, ammonia borane, dimethylsulfide borane or dimethylamine borane (DMAB) and the second borane containing reducing agent is morpholine borane. 4. The method, as recited in claim 1 , wherein the first borane containing reducing agent comprises borane dimethylamine and the second borane containing reducing agent comprises morpholine borane. 5. The method, as recited in claim 1 , wherein the first borane containing reducing agent is at least one of tert-butylamine borane, ammonia borane, dimethylsulfide borane or dimethylamine borane (DMAB) and the second borane containing reducing agent is morpholine borane. 6. A method for providing electroless deposition of a metal layer on a substrate, comprising: exposing the substrate to an electroless metal deposition solution, comprising a metal precursor, first borane containing reducing agent, and a second borane containing reducing agent, wherein the first borane containing reducing agent has a deposition rate that is at least five times a deposition rate of the second borane containing reducing agent, wherein the exposing the substrate to an electroless metal deposition solution, comprising: exposing the substrate to a first electroless metal deposition solution, comprising the metal precursor and the first borane containing reducing agent, wherein the solution is free of nonborane reducing agents; and subsequently exposing the substrate to a second electroless metal deposition solution, comprising the metal precursor and the second borane containing reducing agent, wherein the solution is free of nonborane reducing agents.
using a liquid · CPC title
using reducing agents for coating with metallic material not provided for in a single one of groups C23C18/32 - C23C18/50 · CPC title
with alloys based on iron, cobalt or nickel · CPC title
using reducing agents · CPC title
using reducing agents · CPC title
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