Off-angled heating of the underside of a substrate using a lamp assembly

Patent metadata

Field	Value
Publication number	US-9818587-B2
Application number	US-201313827736-A
Country	US
Kind code	B2
Filing date	Mar 14, 2013
Priority date	Mar 11, 2011
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

First claim

What is claimed is:

1. A chamber for processing substrates, comprising:
a chamber body defining a processing region and an inlet for process gases;
a sputtering target disposed in the chamber;
a radiant energy source positioned at a peripheral region of the chamber to provide radiant energy between a processing location and a transportation location of the chamber; and a reflector that is annular and mounted to a sidewall of the chamber, the reflector having:
a lower portion having at least one support for the radiant energy source and a concave inner surface disposed around the radiant energy source, the concave inner surface consisting of a reflective surface;
an upper portion having a planar lower surface disposed above the radiant energy source, the planar lower surface consisting of a reflective surface that is parallel to a substrate receiving surface; and
wherein the concave inner surface is configured to reflect radiation from the radiant energy source and from the planar lower surface to the processing location.

2. The chamber of claim 1 , wherein the radiant energy source comprises two semicircular arc lamps.

3. The chamber of claim 1 , further comprising a substrate support coupled to a vertical actuator and a lift pin assembly coupled to the substrate support and extending through a substrate receiving surface thereof, wherein the lift pin assembly comprises a plurality of lift pins each having a length sufficient to maintain a substrate at the processing location while the substrate receiving surface of the substrate support is positioned between the radiant energy source and the transportation location.

4. The chamber of claim 1 , wherein the reflector comprises a radial extension protruding between the radiant energy source and peripheral portions of the processing location inside the chamber.

5. The chamber of claim 1 , further comprising a substrate support with an edge ring having a reflective surface.

6. The chamber of claim 1 , further comprising a substrate support with an edge ring having a reflective surface that is angled with respect to the substrate receiving surface of the substrate support.

7. The chamber of claim 5 , wherein the substrate support has the substrate receiving surface having channels therein, and a depth of one or more of the channels increases with distance from a center of the substrate support.

8. The chamber of claim 1 , wherein the radiant energy source has a coating on a surface of the radiant energy source facing away from the reflector.

9. The chamber of claim 8 , wherein the coating is reflective.

10. A chamber for processing a single substrate, comprising:
a chamber body defining a processing region;
a sputtering target disposed at least partially within the chamber body;
a substrate support movably disposed inside the chamber to move between a processing location and a substrate transportation location, the substrate support defining a substrate receiving surface having a plurality of channels formed therein and the substrate support comprises a plurality of openings formed therethrough;
a lift pin assembly coupled with the substrate support, the lift pin assembly comprising a plurality of lift pins movably disposed through the openings in the substrate support;
a radiant energy source disposed within the processing region of the chamber that defines a radiant source plane that is disposed between the processing location and the substrate transportation location;
and an annular reflector, the annular reflector mounted to a sidewall of the chamber, the annular reflector having:
a lower portion having at least one support for the radiant energy source and a concave inner surface that at least partially surrounds the radiant heat source, the concave inner surface consisting of a reflective surface;
an upper portion having a planar lower surface disposed above the radiant energy source, the planar lower surface consisting of a reflective surface that is parallel to the substrate receiving surface; and
wherein the concave inner surface is configured to reflect radiation from the radiant energy source and from the planar lower surface toward the processing location.

11. The chamber of claim 10 , wherein channels formed in the substrate receiving surface have a depth that increases from a center of the substrate receiving surface to a peripheral portion of the substrate receiving surface.

12. The chamber of claim 10 , further comprising an edge ring disposed around the substrate support and having a reflective upper surface, wherein the substrate support also has a reflective upper surface.

13. The chamber of claim 10 , wherein the substrate support has a reflective substrate receiving surface comprising a dielectric mirror.

14. The chamber of claim 10 , wherein the radiant energy source has a reflective coating on a surface facing the processing location.

15. The chamber of claim 1 , wherein the radiant energy source includes a heat lamp, a halogen lamp, a coaxial microwave or a millimeter wave source.

16. The chamber of claim 3 , wherein the substrate support has a reflective upper surface.

17. The chamber of claim 1 , further comprising a substrate support, and the radiant energy source assembly at least partially surrounds the substrate support.

18. The chamber of claim 10 , further comprising a shadow ring having an inner diameter configured to shadow a portion of the substrate closest to the radiant energy source.

19. The chamber of claim 1 , wherein a power source is operably coupled to the sputtering target.

20. The chamber of claim 10 , wherein a power source is operably coupled to the sputtering target.

21. The chamber of claim 10 , wherein the radiant energy source is disposed within the chamber on a plurality of discontinuous supports extending radially inward from the reflector.

Assignees

• Applied Materials Inc

Inventors

• Ewert Maurice E
• Subramani Anantha K
• Kelkar Umesh M
• Balasubramanyam Chandrasekhar
• Ranish Joseph M

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H10P14/44

  Physical vapour deposition [PVD] · CPC title