Xray diffraction angle verification in an ion implanter
US-2024222070-A1 · Jul 4, 2024 · US
US9818575B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9818575-B2 |
| Application number | US-201514942239-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 16, 2015 |
| Priority date | Nov 16, 2015 |
| Publication date | Nov 14, 2017 |
| Grant date | Nov 14, 2017 |
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A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of the main body, a plurality of spaced apart mounting legs extending from a second face of the main body opposite the first face, the plurality of spaced apart mounting legs extending from the second face offset from the plurality of spaced apart mounting legs extending from the first face in a direction orthogonal to an axis of the main body, the low profile extraction electrode assembly further comprising a ground electrode fastened to the mounting legs extending from the first face, and a suppression electrode fastened to the mounting legs extending from the second face, wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode.
Opening claim text (preview).
The invention claimed is: 1. A low profile extraction electrode assembly comprising: an insulator; a ground electrode fastened to a first side of the insulator; and a suppression electrode fastened to a second side of the insulator opposite the first side; wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode, and wherein the tracking distance between the ground electrode and the suppression electrode extends along a circumference of the insulator and is greater than an overall thickness of the insulator. 2. An ion implanter, comprising: a source chamber; an ion source disposed within the source chamber and configured to generate an ion beam; and a low profile extraction electrode assembly disposed within the source chamber adjacent the ion source and configured to extract and focus the ion beam, the low profile extraction electrode assembly comprising: an insulator; a ground electrode fastened to a first side of the insulator; and a suppression electrode fastened to a second side of the insulator opposite the first side; wherein a tracking distance between the ground electrode and the suppression electrode is greater than a focal distance between the ground electrode and the suppression electrode, and wherein the tracking distance between the ground electrode and the suppression electrode extends along a circumference of the insulator and is greater than an overall thickness of the insulator. 3. The ion implanter of claim 2 , wherein one of the ground electrode and the suppression electrode is coupled to a manipulator for selectively adjusting a position of the extraction electrode assembly.
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Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube · CPC title
for ion implantation · CPC title
for centering, aligning or positioning of ray or beam · CPC title
Ion sources; Ion guns · CPC title
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