Fluid ejection structure

Patent metadata

Field	Value
Publication number	US-9815282-B2
Application number	US-201415120676-A
Country	US
Kind code	B2
Filing date	Jun 30, 2014
Priority date	Jun 30, 2014
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A fluid ejection structure can include thermal resistors, a substrate, layers on the substrate, wherein said layers can include a region proximate to the resistor that has reduced field oxide.

First claim

The invention claimed is:

1. A fluid ejection structure, comprising
a multitude of thermal resistors,
a substrate,
layers on the substrate, comprising
a heat sink region between each resistor and the substrate, and
a neighboring region next to the heat sink region the neighboring region comprising a field oxide layer on the substrate having a first thickness, wherein a reduced field oxide layer in the heat sink region has a thickness of between 0% and 80% of said first thickness,

at least one firing chamber near at least one of the resistors,
a fluid feed slot to the firing chamber, wherein
the neighboring region extends next to the heat sink region opposite from the fluid feed slot, and
a slot region is provided between the heat sink region and the fluid feed slot, the slot region comprising a field oxide layer that covers the substrate and terminates at a fluid feed slot.

2. The fluid ejection structure of claim 1 wherein at least one thermal resistor material layer includes said multitude of thermal resistors, wherein the heat sink region and the neighboring region are composed of layers stacked between the substrate and the thermal resistor material layer.

3. The fluid ejection structure of claim 1 comprising at least one fluid slot and at least one thermal resistor array parallel to said fluid slot wherein the reduced field oxide layer field spans the entire thermal resistor array.

4. The fluid ejection structure of claim 1 wherein
the neighboring region comprises at least one oxide layer other than the field oxide layer in the neighboring region, and
the layers are free of that oxide layer in the heat sink region.

5. The fluid ejection structure of claim 1 wherein an average thickness of summed oxide layers in the heat sink region is thinner than an averaged thickness of summed oxide layers in the neighboring region.

6. The fluid ejection structure of claim 1 comprising a conductive layer that includes a metal component, extending from the neighboring region into the heat sink region.

7. The fluid ejection structure of claim 6 wherein the conductive layer is part of a power routing circuit.

8. The fluid ejection structure of claim 1 wherein the heat sink region is free of field oxide.

9. The fluid ejection structure of claim 8 wherein at least one gate layer is disposed between the substrate and the conductive layer.

10. The fluid ejection structure of claim 8 wherein the substrate includes an n-well region that spans the heat sink region.

11. The fluid ejection structure of claim 1 wherein field oxide of reduced layer thickness is provided in the heat sink region, and no gate layer is disposed in the heat sink region.

12. The fluid ejection structure of claim 11 wherein the substrate includes a p-well region that spans the heat sink region.

13. The fluid ejection structure of claim 1 wherein the neighboring region further comprises
a thermal resistor material layer,
at least two oxide layers other than the field oxide layer, and
a power routing circuit layer; and
the heat sink region further comprises
at least one less oxide layer as compared to the neighboring region,
the power routing circuit layer, and
a gate oxide layer.

14. The fluid ejection structure of claim 1 wherein the thermal resistors are arranged at a pitch of at least 300 per inch.

15. A fluid ejection structure, comprising
a multitude of thermal resistors,
a substrate,
layers on the substrate, comprising
a heat sink region proximate to the resistor, between each resistor and the substrate, and
a neighboring region next to the heat sink region, the neighboring region comprising field oxide layer on the substrate having a first thickness, wherein a reduced field oxide layer in the heat sink region has a thickness of between 0% and 80% of said first thickness,

wherein the neighboring region further comprises
a thermal resistor material layer,
at least two oxide layers other than the field oxide layer, and
a power routing circuit layer; and

the heat sink region further comprises
at least one less oxide layer as compared to the neighboring region,
the power routing circuit layer, and
a gate oxide layer.

16. A fluid ejection structure, comprising
at least one thermal resistor material layer including a thermal resistor array,
a substrate, and
at least one oxide layer between a thermal resistor material layer and the substrate, the at least one oxide layer including
a reduced field oxide layer field over the substrate a region proximate to the resistor to enhance cooling of the resistor after firing, and
a non-reduced field oxide layer over the substrate outside of a region proximate to the resistor,

at least one firing chamber near at least one of the resistors,
a fluid feed slot to the firing chamber, and
a slot region provided between the region proximate to the resistor and the fluid feed slot, the slot region comprising field oxide layer that covers the substrate and terminates at a fluid feed slot.

Assignees

• Hewlett Packard Development Co Lp

Inventors

• Chung Bradley D
• Cook Galen P
• Hayes Michael H
• Ghozeil Adam L
• Domingue Chantelle Elizabeth
• Marty Valerie J
• Fuller Anthony M
• Chaffins Sterling

Classifications

• B41J2/14129 Primary

  Layer structure · CPC title

• B41J2/1631

  photolithography · CPC title

• B41J2/1628

  dry etching · CPC title

• B41J2/1603

  of the front shooter type · CPC title

• B41J29/377

  Cooling or ventilating arrangements · CPC title