Light detection device

Patent metadata

Field	Value
Publication number	US-9812602-B2
Application number	US-201514860653-A
Country	US
Kind code	B2
Filing date	Sep 21, 2015
Priority date	Dec 20, 2012
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A light detection device includes a substrate, a buffer layer disposed on the substrate, a first band gap change layer disposed on a portion of the buffer layer, a light absorption layer disposed on the first band gap change layer, a Schottky layer disposed on a portion of the light absorption layer, and a first electrode layer disposed on a portion of the Schottky layer.

First claim

What is claimed is:

1. A light detection device comprising:
a substrate;
a buffer layer disposed over the substrate;
a first band gap change layer disposed over a portion of the buffer layer;
a light absorption layer disposed over the first band gap change layer;
a Schottky layer disposed over a portion of the light absorption layer; and
a top layer disposed between the light absorption layer and the Schottky layer, and
wherein the light absorption layer has an energy band gap higher than that of the buffer layer and the first band gap change layer has multiple layers each having different Al contents such that the layers of the first band gap change layer have an increasing energy band gap towards the light absorption layer and the top layer has an energy band gap higher than that of the light absorption layer.

2. The light detection device of claim 1 , further comprising a Schottky fixing layer disposed over the Schottky layer to cover the Schottky layer.

3. The light detection device of claim 1 , wherein the Schottky layer comprises ITO, ATO, Pt, W, Ti, Pd, Ru, Cr, or Au and the Schottky fixing layer comprises ITO, ATO, Pt, W, Ti, Pd, Ru, Cr, or Au.

4. The light detection device of claim 1 , further comprising:
a first electrode layer disposed over the Schottky fixing layer; and
a second electrode layer disposed on the buffer layer and spaced apart from the first band gap change layer, the second electrode layer configured to form an Ohmic junction with the buffer layer.

5. The light detection device of claim 1 , wherein the substrate comprises a sapphire substrate, an SiC substrate, a GaN substrate, an AlN substrate, or an Si substrate.

6. The light detection device of claim 1 , wherein the buffer layer comprises a low-temperature GaN layer disposed over the substrate and a high-temperature GaN layer disposed over the low-temperature GaN layer.

7. The light detection device of claim 1 , wherein the multiple layers comprises AlGaN layers.

8. The light detection device of claim 1 , wherein the light absorption layer has an energy band gap higher than that of the buffer layer.

9. The light detection device of claim 1 , wherein the light absorption layer comprises Al x Ga 1-x N (0<x<0.7) or In y Ga 1-y N (0<y<0.5).

10. The light detection device of claim 1 , wherein the first band gap change layer comprises InGaN layers having different In contents.

11. The light detection device of claim 1 , wherein the first band gap change layer has a thickness between 0 and 50 nm.

12. The light detection device of claim 1 , wherein the light absorption layer has a thickness between 0.1 to 0.5 μm.

13. A light detection device, comprising:
a body;
first and second electrodes formed in the body and separated from each other; and
a light-emitting diode formed on a first substrate and electrically connected with the first electrode, the light-emitting diode operable to emit light;
a photo detection structure formed on a second substrate spaced apart from the first substrate and electrically connected with the second electrode, the photo detection structure located to detect the emitted light from the light-emitting diode.

14. The light detection device of claim 13 , the photo detection structure exhibits a particular reactivity in the absorption layer.

15. The light detection device of claim 13 , wherein the body has a groove formed in the body and having a curved shape and the first and second electrodes are formed on a surface of the groove.

16. The light detection device of claim 13 , further comprising a cover detachably combined with the body.

Assignees

• Seoul Viosys Co Ltd

Inventors

• Park Ki Yon
• Kim Hwa Mok
• Son Young Hwan
• Suh Daewoong

Classifications

• H01L31/1848

  Electricity · mapped topic

• H01L31/1013

  Electricity · mapped topic

• H01L31/03048

  Electricity · mapped topic

• H01L31/022408

  Electricity · mapped topic

• H01L31/0224

  Electricity · mapped topic