Photoelectric device and electronic apparatus including the same

Patent metadata

Field	Value
Publication number	US-9812596-B2
Application number	US-201615198788-A
Country	US
Kind code	B2
Filing date	Jun 30, 2016
Priority date	Sep 17, 2015
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

Provided are photoelectric devices and electronic apparatuses including the photoelectric devices. A photoelectric device may include a photoactive layer, the photoactive layer may include a nanostructure layer configured to generate a charge in response to light and a semiconductor layer adjacent to the nanostructure layer. The nanostructure layer may include one or more quantum dots. The semiconductor layer may include an oxide semiconductor. The photoelectric device may include a first electrode and a second electrode that contact different regions of the photoactive layer. A number of the photoelectric conversion elements may be arranged in a horizontal direction or may be stacked in a vertical direction. The photoelectric conversion elements may absorb and thereby detect light in different wavelength bands without the use of color filters.

First claim

What is claimed is:

1. A photoelectric device for converting optical energy into electrical energy, the photoelectric device comprising:
a photoactive layer comprising:
a quantum dot layer configured to generate an electric charge in response to light incident thereon, and
a semiconductor layer configured to conduct the electric charge generated by the quantum dot layer;

a first electrode electrically connected to a first end of the semiconductor layer; and
a second electrode electrically connected to a second end of the semiconductor layer,
wherein the semiconductor layer comprises a lower semiconductor layer and an upper semiconductor layer, and the quantum dot layer is disposed between the lower semiconductor layer and the upper semiconductor layer, and
wherein a thickness of the lower semiconductor layer is different from a thickness of the upper semiconductor layer.

2. The photoelectric device of claim 1 , wherein the semiconductor layer has an energy band gap of about 3.0 eV to about 5.0 eV.

3. The photoelectric device of claim 1 , wherein the quantum dot layer comprises a plurality of quantum dots, wherein each of the plurality of quantum dots comprises at least one of a II-VI group-based semiconductor, a III-V group-based semiconductor, a IV-VI group-based semiconductor, a IV group-based semiconductor, and a graphene quantum dot.

4. The photoelectric device of claim 1 , wherein the first electrode is spaced apart from the second electrode in a direction parallel to the photoactive layer.

5. The photoelectric device of claim 1 , wherein
the photoelectric device is a phototransistor, and
the photoelectric device further comprises a gate electrode configured to apply an electric field to the photoactive layer.

6. The photoelectric device of claim 1 , wherein the photoelectric device is one of a photodetector and a photovoltaic device.

7. An electronic apparatus comprising the photoelectric device of claim 1 .

8. The photoelectric device of claim 1 , wherein the semiconductor layer comprises an oxide semiconductor.

9. The photoelectric device of claim 8 , wherein the oxide semiconductor comprises at least one of a zinc oxide (ZnO)-based oxide, an indium oxide (InO)-based oxide, and a tin oxide (SnO)-based oxide.

10. The photoelectric device of claim 8 , wherein the oxide semiconductor comprises at least one of a silicon indium zinc oxide (SIZO), a silicon zinc tin oxide (SZTO), a zinc oxide (ZnO), an indium zinc oxide (IZO), a zinc tin oxide (ZTO), a gallium indium zinc oxide (GIZO), a hafnium indium zinc oxide (HIZO), an indium zinc tin oxide (IZTO), a tin oxide (SnO), an indium tin oxide (ITO), an indium gallium oxide (IGO), an indium oxide (InO), and an aluminum indium oxide (AIO).

11. A photoelectric device comprising:
a plurality of photoelectric conversion elements, each configured to convert optical energy into electrical energy, wherein
the plurality of photoelectric conversion elements comprise a first photoelectric conversion element and a second photoelectric conversion element,
wherein the first photoelectric conversion element comprises:
a first electrode, a second electrode, and a first photoactive layer disposed between the first electrode and the second electrode, wherein the first photoactive layer comprises a first quantum dot layer configured to generate an electric charge in response to light incident thereon, and a first semiconductor layer configured to conduct the electric charge generated by the first quantum dot layer; and

wherein the second photoelectric conversion element comprises:
a third electrode, a fourth electrode, and a second photoactive layer disposed between the third electrode and the fourth electrode, wherein the second photoactive layer comprises a second quantum dot layer configured to generate an electric charge in response to light incident thereon, and a second semiconductor layer configured to conduct the electric charge generated by the second quantum dot layer,

wherein the first quantum dot layer is configured to absorb light in a first wavelength band and the second quantum dot layer is configured to absorb light in a second wavelength band, different from the first wavelength band.

12. The photoelectric device of claim 11 , wherein the plurality of photoelectric conversion elements are spaced apart from each other in a horizontal direction.

13. The photoelectric device of claim 11 , wherein the plurality of photoelectric conversion elements are stacked in a vertical direction.

14. The photoelectric device of claim 11 , wherein at least one of the first semiconductor layer and the second semiconductor layer has an energy band gap of about 3.0 eV to about 5.0 eV.

15. The photoelectric device of claim 11 , wherein the first quantum dot layer is embedded in the first semiconductor layer, and/or the second quantum dot layer is embedded in the second semiconductor layer.

16. The photoelectric device of claim 11 , further comprising at least one gate electrode configured to apply an electric field to the plurality of photoelectric conversion elements.

17. An electronic apparatus comprising the photoelectric device of claim 11 .

18. The photoelectric device of claim 11 , wherein
the plurality of photoelectric conversion elements further comprises a third photoelectric conversion element,
wherein the third photoelectric conversion element comprises:
a fifth electrode, a sixth electrode, and a third photoactive layer disposed between the fifth electrode and the sixth electrode, wherein the third photoactive layer comprises a third quantum dot layer configured to generate an electric charge in response to light incident thereon, and a third semiconductor layer configured to conduct the electric charge generated by the third quantum dot layer, and

wherein the third quantum dot layer is configured to absorb light in a third wavelength band different from the first wavelength band and the second wavelength band.

19. The photoelectric device of claim 18 , wherein
the first photoelectric conversion element is configured to absorb light corresponding to one of red light, green light, blue light, and infrared light,
the second photoelectric conversion element is configured to absorb light corresponding to one of red light, green light, blue light, and infrared light, and
the third photoelectric conversion element is configured to absorb light corresponding to one of red light, green light, blue light, and infrared light.

20. The photoelectric device of claim 11 , wherein at least one of the first semiconductor layer and the second semiconductor layer comprises an oxide semiconductor.

21. The photoelectric device of claim 20 , wherein the oxide semiconductor comprises at least one of a zinc oxide (ZnO)-based oxide, an indium oxide (InO)-based oxide, and a tin oxide (SnO)-based oxide.

22. The photoelectric device of claim 20 wherein the oxide semiconductor comprises at least one of a silicon indium zinc oxide (SIZO), a silicon zinc tin oxide (SZTO), a zinc oxide (ZnO), an indium zinc oxide (IZO), a zinc tin oxide (ZTO), a gallium indium zinc oxide (GIZO), a hafnium indium zinc oxide (HIZO), an indium zinc tin oxide (IZTO), a tin oxide (SnO), an indium tin oxide (ITO), an indium gallium oxide (IGO), an indium oxide (InO), and an aluminum indium oxide (AIO).

23. A photoelectric device comprising:
a plurality of photoelectric conversion elements, each configured to convert optical energy into elect

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Kyungsang
• Baik Chanwook
• Jeong Heejeong

Classifications

• Y10S977/954

  Of radiant energy · CPC title

• Y10S977/774

  Exhibiting three-dimensional carrier confinement, e.g. quantum dots · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• H01L31/035218

  Electricity · mapped topic

• H01L31/032

  Electricity · mapped topic