Integrated semiconductor device and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-9812442-B2
Application number	US-201213418339-A
Country	US
Kind code	B2
Filing date	Mar 12, 2012
Priority date	Dec 12, 2011
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

An integrated device includes a field effect transistor formed within and upon an active region of a substrate and a resistor formed on an isolation region of the substrate. The field effect transistor includes a gate stacked structure having respective portions of a dielectric layer, a first conductive layer and a second conductive layer arranged in order from bottom to top. The resistor includes a resistor body being an enclosure portion of the first conductive layer and resistor terminals being portions of the second conductive layer on distal ends of the resistor body. A method for manufacturing a semiconductor device includes forming a gate stacked structure and a resistor stacked structure at the same time by patterning a dielectric layer, a first conductive layer and a second conductive layer. The method also includes forming a resistor having a resistor body by patterning the resistor stacked structure.

First claim

What is claimed is:

1. An integrated semiconductor device comprising:
a field effect transistor formed within and on an active region of a semiconductor substrate;
a resistor formed on an isolation region of the semiconductor substrate; and
an interlayer dielectric layer,
wherein the field effect transistor comprises a gate stacked structure having respective portions of a dielectric layer, a first conductive layer and a second conductive layer that are sequentially stacked on the semiconductor substrate, the dielectric layer being on the semiconductor substrate and the first conductive layer being sandwiched between the dielectric layer and the second conductive layer;
wherein the resistor comprises a resistor body being an enclosure portion of the first conductive layer entirely on the dielectric layer and resistor terminals being portions of the second conductive layer on distal ends of the resistor body, wherein the enclosure portion comprises two linear segments extending between the distal ends of the resistor body, a resistance of the resistor body defining a resistance value of the resistor; and
wherein the interlayer dielectric layer extends between the resistor terminals and into an opening in the enclosure portion to directly contact a portion of the dielectric layer through the opening in the enclosure portion, the interlayer dielectric layer direct contacting the enclosure portion, the opening in the enclosure portion being entirely surrounded by and between the two linear segments and the distal ends of the resistor body, inner and outer perimeters of the enclosure portion formed by the first conducitve layer being continuous in a plan view, the outer perimeter of the enclosure portion being co-aligned with an outer perimeter of the resistor terminals.

2. The integrated semiconductor device of claim 1 , wherein the first conductive layer comprises a metal element.

3. The integrated semiconductor device of claim 1 , wherein the first conductive layer comprises a material selected from Ti, Ta, TiN, TiAl, TaC and TaN.

4. The integrated semiconductor device of claim 1 , wherein the first conductive layer has a thickness in a range from about 10 Å to about 100 Å.

5. The integrated semiconductor device of claim 1 , wherein the enclosure portion has a width in a range from about 1 nm to about 10 nm.

6. The integrated semiconductor device of claim 1 , wherein the first conductive layer comprises a plurality of conductive sub-layers.

7. The integrated semiconductor device of claim 1 , wherein the second conductive layer comprises a material selected from polysilicon, Al, W and Ag.

8. The integrated semiconductor device of claim 1 , wherein the dielectric layer comprises a high-K dielectric material.

9. The integrated semiconductor device of claim 8 , wherein the high-K dielectric material comprises hafnium.

10. The integrated semiconductor device of claim 9 , wherein the high-K dielectric material is selected from HfO 2 , HfSiO, HfSiON and HfZrO 4 .

11. The integrated semiconductor device of claim 1 , further comprising a contact electrically connected to the field effect transistor and contacts electrically connected to the resistor terminals.

12. The integrated semiconductor device of claim 11 , wherein the contact electrically connected to the field effect transistor and one of the contacts electrically connected to the resistor terminals are electrically connected to each other.

13. The integrated semiconductor device of claim 11 wherein the contact electrically connected to the field effect transistor and the contacts electrically connected to the resistor terminals are in the interlayer dielectric layer.

14. The integrated semiconductor device of claim 1 , further comprising a first sidewall spacer directly contacting the two linear segments and the distal ends of the resistor body.

Assignees

• Hong Zhongshan
• Semiconductor Mfg Int Beijing Corp

Inventors

• Hong Zhongshan

Classifications

• H10D84/817

  Combinations of field-effect devices and resistors only · CPC title

• H10D1/474 Primary

  comprising refractory metals, transition metals, noble metals, metal compounds or metal alloys, e.g. silicides · CPC title

• H01L27/0629 Primary

  Electricity · mapped topic

• H01L27/0802

  Electricity · mapped topic

• H01L28/24

  Electricity · mapped topic