Power semiconductor module

Patent metadata

Field	Value
Publication number	US-9812431-B2
Application number	US-201514672467-A
Country	US
Kind code	B2
Filing date	Mar 30, 2015
Priority date	Apr 1, 2014
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A power semiconductor module is equipped with: a metal base; semiconductor chips electrically connected with and fixed to the metal base; and an insulating substrate fixed to the metal base and having a circuit plate on one surface. Additionally, the power semiconductor module is further equipped with a circuit board that is provided so as to face the semiconductor chips and the insulating substrate and that electrically connects electrodes of the semiconductor chips and the circuit plate of the insulating substrate. Further, the power semiconductor module is equipped with a conductive post that is electrically connected to at least one of either the electrodes of the semiconductor chips or the circuit plate of the insulating substrate while being electrically connected to the metal film of the circuit board.

First claim

What is claimed is:

1. A power semiconductor module, comprising:
a metal base;
a semiconductor element on the metal base, the semiconductor element having a first electrode on a bottom surface and a second electrode on a top surface thereof, said first electrode being electrically connected and fixed to said metal base;
a multilayer substrate on the metal base, placed side-by-side with the semiconductor element, the multilayer substrate being formed by stacking together a circuit plate, an insulating plate, and a metal plate, said metal plate being fixed to said metal base;
a circuit board that is provided so as to face said semiconductor element and said multilayer substrate and that has a metal film electrically connecting the second electrode of said semiconductor element to the circuit plate of said multilayer substrate; and
a conductive post electrically connected and fixed to the second electrode of said semiconductor element at one end and electrically connected and fixed to the metal film of said circuit board at another end,
wherein the circuit plate of said multilayer substrate and the metal film of the circuit board are connected via a solder that directly contacts the circuit plate and the metal film or via a solder and a metal block that are interposed between the circuit plate and the metal film.

2. The power semiconductor module according to claim 1 , wherein said semiconductor element is made of silicon carbide.

3. The power semiconductor according to claim 1 , further comprising a case housing said semiconductor element and said multilayer substrate, said semiconductor element and said multilayer substrate inside said case being sealed by a thermosetting resin.

4. The power semiconductor according to claim 1 , further comprising:
a case housing said semiconductor element and said multilayer substrate; and
a metal terminal that is electrically connected to the circuit plate of said multilayer substrate and that protrudes out of said case.

5. A power semiconductor module, comprising:
a metal base;
a semiconductor element on the metal base, the semiconductor element having a first electrode on a bottom surface and a second electrode on a top surface thereof, said first electrode being electrically connected and fixed to said metal base;
a multilayer substrate on the metal base, placed side-by-side with the semiconductor element, the multilayer substrate being formed by stacking together a circuit plate, an insulating plate, and a metal plate, said metal plate being fixed to said metal base;
a circuit board that is provided so as to face said semiconductor element and said multilayer substrate and that has a metal film electrically connecting the second electrode of said semiconductor element to the circuit plate of said multilayer substrate; and
a conductive post electrically connected and fixed to the circuit plate of said multilayer substrate at one end and electrically connected and fixed to the metal film of said circuit board at another end,
wherein said metal base is connected to the first electrode of said semiconductor element via a metal block and a solder that are interposed between the metal base and the first electrode.

6. The power semiconductor module according to claim 5 , wherein said semiconductor element is made of silicon carbide.

7. The power semiconductor according to claim 5 , further comprising a case housing said semiconductor element and said multilayer substrate, said semiconductor element and said multilayer substrate inside said case being sealed by a thermosetting resin.

8. The power semiconductor according to claim 5 , further comprising:
a case housing said semiconductor element and said multilayer substrate; and
a metal terminal that is electrically connected to the circuit plate of said multilayer substrate and that protrudes out of said case.

Assignees

• Fuji Electric Co Ltd

Inventors

• Inaba Tetsuya
• Ikeda Yoshinari

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W76/47

  Solid or gel fillings · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W90/701

  characterised by the relative positions of pads or connectors relative to package parts · CPC title

• H10W76/136 Primary

  having other interconnections perpendicular to the conductive base · CPC title