Conductive material and electrical device including the same
US-2015344305-A1 · Dec 3, 2015 · US
US9809490B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9809490-B2 |
| Application number | US-201615188060-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 21, 2016 |
| Priority date | Jul 2, 2015 |
| Publication date | Nov 7, 2017 |
| Grant date | Nov 7, 2017 |
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A method for producing an oxynitride film includes: (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying at least one of a nitrogen gas and an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor.
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What is claimed is: 1. A method for producing an oxynitride film, comprising: (A) supplying a first precursor containing a network former into a reactor in which a substrate is placed; (B) supplying at least one selected from the group consisting of an oxygen gas and an ozone gas into the reactor; (C) supplying a second precursor containing at least one selected from the group consisting of an alkali metal element and an alkaline-earth metal element into the reactor; (D) supplying an ammonia gas into the reactor; and (E) supplying a purge gas into the reactor, wherein a process cycle including (A), (B), (C), and (E) is repeated a plurality of times while (D) is continuously performed. 2. The method according to claim 1 , wherein, in one process cycle, (E) is performed each time after (A), (B), or (C) is performed once. 3. The method according to claim 1 , wherein, in one process cycle, (A) is performed before (B). 4. The method according to claim 1 , wherein, in one process cycle, (A) and (C) are performed in different periods. 5. The method according to claim 1 , wherein the second precursor contains at least one selected from the group consisting of Li, Na, Mg, and Ca. 6. The method according to claim 1 , wherein the network former contains at least one selected from the group consisting of P, B, Si, and V. 7. The method according to claim 1 , wherein the oxynitride film contains the network former and at least one selected from the group consisting of the alkali metal element and the alkaline-earth metal element. 8. The method according to claim 1 , wherein the second precursor contains Li, the network former contains P, and the oxynitride film contains Li, P, O, and N. 9. The method according to claim 1 , wherein the oxynitride film has a thickness of 200 nm or less. 10. The method according to claim 1 , wherein, in one process cycle, (A), (B), and (C) are separately performed. 11. The method according to claim 1 , wherein (E) is continuously performed over the process cycle.
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