Methods of fabricating low melting point solder reinforced sealant and structures formed thereby

Patent metadata

Field	Value
Publication number	US-9808875-B2
Application number	US-201615017398-A
Country	US
Kind code	B2
Filing date	Feb 5, 2016
Priority date	Dec 30, 2009
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

Methods and associated structures of forming a package structure including forming a low melting point solder material on a solder resist opening location of an IHS keep out zone, forming a sealant in a non SRO keep out zone region; attaching the IHS to the sealant, and curing the sealant, wherein a solder joint is formed between the IHS and the low melting point solder material.

First claim

What is claimed is:

1. A method comprising:
forming a low melting point solder material on a location of an integrated heat spreader (IHS);
forming a sealant in a keep out zone (KOZ) region of a substrate, wherein the sealant is not formed in a solder resist open (SRO) region of the KOZ, wherein the SRO region is a plurality of openings formed into a top surface of the substrate;
bringing the IHS into contact with the sealant, wherein the low melting point solder material is only located in the SRO region of the KOZ; and
curing the sealant, wherein a solder joint formed from the low melting point solder material is formed between the IHS and the substrate during the curing of the sealant, and wherein the melting temperature of the low melting point solder material is less than or equal to a curing temperature of the sealant.

2. The method of claim 1 wherein the low melting point solder comprises a melting temperature of below about 165 degrees Celsius.

3. The method of claim 1 further comprising wherein a temperature profile used for the sealant cure will simultaneously create a solder joint between IHS and substrate.

4. The method of claim 1 further comprising forming flux coated low melting point solder to the IHS at least one of corner and notch locations of the IHS.

5. The method of claim 1 further comprising wherein the sealant is dispensed in the IHS KOZ but not in the SRO regions.

6. The method of claim 1 wherein the low melting point solder melts at a temperature at or below the cure temperature of the sealant to form a joint between the substrate and the IHS.

7. The method of claim 1 further comprising wherein the IHS comprises an organic surface protection (OSP) on an inner portion of the IHS.

8. The method of claim 7 wherein the OSP is removed during the curing of the sealant.

Assignees

• Intel Corp

Inventors

• Kulkarni Deepak V
• Deppisch Carl L
• Arana Leonel R
• Constable Gregory S
• Srinivasan Sriram

Classifications

• B23K1/203

  Fluxing, i.e. applying flux onto surfaces · CPC title

• B23K1/20

  Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title

• H10W40/22

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title