Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface

Patent metadata

Field	Value
Publication number	US-9803161-B2
Application number	US-201314397364-A
Country	US
Kind code	B2
Filing date	Apr 26, 2013
Priority date	Apr 27, 2012
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

A cleaning agent is provided for a semiconductor substrate superior in corrosion resistance of a tungsten wiring or a tungsten alloy wiring, and superior in removal property of polishing fines (particle) such as silica or alumina, remaining at surface of the semiconductor substrate, in particular, at surface of a silicon oxide film such as a TEOS film, after a chemical mechanical polishing process; and a method for processing a semiconductor substrate surface. A cleaning agent for a semiconductor substrate is to be used in a post process of a chemical mechanical polishing process of the semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule and (C) water, wherein a pH is over 6 and below 7.

First claim

The invention claimed is:

1. A method for processing a semiconductor substrate surface, comprising:
a process for treating a surface of a semiconductor substrate having a tungsten wiring or a tungsten alloy wiring, and a silicon oxide film, by chemical mechanical polishing; and
a process for cleaning the semiconductor substrate after the process by the chemical mechanical polishing, with a cleaning agent for a semiconductor substrate comprising (A) a phosphonic acid-based chelating agent, (B) a primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule represented by the general formula [6] or [7],

wherein R 10 and R 11 each independently represent a monohydroxyalkyl group having 1 to 3 carbon atoms; and R 12 represents a hydrogen atom, an alkyl group having 1 to 3 carbon atoms or a monohydroxyalkyl group having 1 to 3 carbon atoms,

wherein R 13 represents a hydrogen atom or an alkyl group having 1 to 3 carbon atoms; and R 14 represents a dihydroxyalkyl group having 1 to 3 carbon atoms, and (C) water, wherein a pH of the cleaning agent is over 6 and below 7.

2. The method according to claim 1 , wherein (B) the primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule represented by the general formula [6] or [7] is 2-amino-1,3-propanediol, 2-amino-2-methyl-1,3-propanediol, 2-amino-2-hydroxymethyl-1,3-propanediol, 2-amino-2-ethyl-1,3-propanediol, 3-amino-1,2-propanediol or 3-methylamino-1,2-propanediol.

3. The method according to claim 1 , wherein the pH is 6.2 to 6.8.

4. The method according to claim 1 , wherein (A) the phosphonic acid-based chelating agent is the one represented by the general formula [1], [2] or [3]:

(wherein X represents a hydrogen atom or a hydroxyl group; and R 1 represents a hydrogen atom or an alkyl group having 1 to 10 carbon atoms);

(wherein Q represents a hydrogen atom or —R 3 —PO 3 H 2 ; R 2 and R 3 each independently represent an alkylene group; and Y represents a hydrogen atom, —R 3 —PO 3 H 2 or a group represented by the general formula [4]),

(wherein Q and R 3 are the same as described above);

(wherein R 4 and R 5 each independently represent an alkylene group having 1 to 4 carbon atoms; “n” represents an integer of 1 to 4; and at least 4 groups of Z 1 to Z 4 and n moieties of Z 5 represent an alkyl group having a phosphonic acid group, and remaining groups represent an alkyl group).

5. The method according to claim 1 , wherein (A) the phosphonic acid-based chelating agent is 1-hydroxyethylidene-1,1′-diphosphonic acid, nitrilotris(methylenephosphonic acid), ethylenediamine tetra(methylenephosphonic acid) or diethylenetriamine penta(methylenephosphonic acid).

6. The method according to claim 1 , wherein the semiconductor substrate is the one having further a silicon nitride film.

7. The method according to claim 1 , wherein (B) the primary or secondary monoamine having at least one alkyl group or hydroxyalkyl group in a molecule represented by the general formula [6] or [7] is 2-amino-2-hydroxymethyl-1,3-propanediol.

Assignees

• Wako Pure Chem Ind Ltd

Inventors

• Kawada Hiromi
• Mizuta Hironori
• Maesawa Tsuneaki

Classifications

• H10P95/064

  the removal being chemical etching · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title