Formulations for producing indium oxide-containing layers, process for producing them and their use
US-2016141177-A1 · May 19, 2016 · US
US9802964B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9802964-B2 |
| Application number | US-201414900936-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 15, 2014 |
| Priority date | Jun 25, 2013 |
| Publication date | Oct 31, 2017 |
| Grant date | Oct 31, 2017 |
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The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX 3 where X=F, Cl, Br, I with a secondary amine of the formula R′ 2 NH where R′=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.
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The invention claimed is: 1. An indium alkoxide compound of formula [In 6 (O)(OR) 12 X 6 ] 2− A m z (ROH) x , where R=alkyl; X=F, Cl, Br, and/or I; A=cation; z=valency of the cation; m·z=2; and x=0 to 10. 2. The compound according to claim 1 , wherein the compound has formula [In 6 (O)(OMe) 12 Cl 6 ] 2− [NH 2 R 2 ] + 2 (MeOH) 2 . 3. A process for preparing an indium alkoxide compound, the process comprising: reacting an indium trihalide InX 3 where X=F, Cl, Br, and/or I with a secondary amine of formula R′ 2 NH where R′=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of formula ROH where R=alkyl, wherein the indium alkoxide compound is the indium alkoxide compound according to claim 1 . 4. The process according to claim 3 , wherein the molar ratio of the secondary amine to the indium trihalide is from 8:1 to 15:1. 5. The process according to claim 4 , wherein the indium trihalide is initially charged in the alcohol ROH and the secondary amine is added in a gaseous form, in a liquid form, or dissolved in a solvent. 6. The process according to claim 5 , wherein the secondary amine is added at a rate of 0.5 to 5 mol per hour and mole of InX 3 . 7. The process according to claim 3 , further comprising: separating and recrystallizing the indium alkoxide compound formed.
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