Low resistance contact for semiconductor devices

Patent metadata

Field	Value
Publication number	US-9799747-B2
Application number	US-201514656089-A
Country	US
Kind code	B2
Filing date	Mar 12, 2015
Priority date	Mar 12, 2015
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type material is formed on or in the p-doped layer. The n-type layer includes ZnO. An aluminum contact is formed in direct contact with the ZnO of the n-type material to form an electronic device.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a substrate;
a p-doped layer including a doped III-V material on the substrate;
an n-type material formed in the p-doped layer, the n-type material including ZnO, wherein the n-type material forms source and drain regions for a field effect transistor, and wherein the n-type material includes Al doped ZnO; and
an aluminum contact formed in direct contact with the ZnO of the n-type material to form an electronic device.

2. The semiconductor device as recited in claim 1 , wherein the aluminum contact includes a resistivity of less than about 5×10 −9 Ohm-cm 2 .

3. The semiconductor device as recited in claim 1 , wherein the aluminum contact includes a resistivity of less than about 1.3×10 −9 Ohm-cm 2 .

4. The semiconductor device as recited in claim 1 , wherein the n-doped material includes a hand gap of less than 1 eV.

5. A semiconductor device, comprising:
a substrate;
a p-doped layer including a doped III-V material on the substrate;
an n-type material formed in contact with the p-doped layer, the n-type material including ZnO, wherein the n-type material forms a p-n junction with the p-doped layer to provide an active device, and wherein the n-type material includes Al doped ZnO; and
an aluminum contact formed overlapping, and in direct contact with, the ZnO of the n-type material to form an electronic device.

6. The semiconductor device as recited in claim 5 , wherein the aluminum contact includes a resistivity of less than about 5×10 −9 Ohm-cm 2 .

7. The semiconductor device as recited in claim 5 , wherein the aluminum contact includes a resistivity of less than about 1.3×10 −9 Ohm-cm 2 .

8. The semiconductor device as recited in claim 5 , wherein the n-doped material includes a band gap of less than 1 eV.

Assignees

• IBM

Inventors

• De Souza Joel P
• Fogel Keith E
• Kim Jeehwan
• Sadana Devendra K
• Wacaser Brent A

Classifications

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/206

  into Group III-V semiconductors · CPC title

• H10D64/013

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title

• H01L29/66522

  Electricity · mapped topic

• H01L29/267

  Electricity · mapped topic