Cascode configured semiconductor component

Patent metadata

Field	Value
Publication number	US-9799646-B2
Application number	US-201615196461-A
Country	US
Kind code	B2
Filing date	Jun 29, 2016
Priority date	Jul 24, 2015
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

In accordance with an embodiment, semiconductor component includes a compound semiconductor material based semiconductor device coupled to a silicon based semiconductor device and a protection element, wherein the silicon based semiconductor device is a transistor. The protection element is coupled in parallel across the silicon based semiconductor device and may be a resistor, a diode, or a transistor. In accordance with another embodiment, the silicon based semiconductor device is a diode. The compound semiconductor material may be shorted to a source of potential such as, for example, ground, with a shorting element.

First claim

What is claimed is:

1. A semiconductor component having at least first and second terminals, comprising:
a first semiconductor device having first and second current carrying terminals, the first semiconductor device configured from a silicon based material;
a second semiconductor device having a control terminal, first and second current carrying terminals, and a body terminal, the second semiconductor device configured from a III-N semiconductor material, the first current carrying terminal of the first semiconductor device coupled to the second current carrying terminal of the second semiconductor device, the control terminal of the second semiconductor device coupled to the second current carrying terminal of the first semiconductor device, and the body terminal of the second semiconductor device directly connected to the second current carrying terminal of the first semiconductor device; and
a protection element having first and second terminals, the first terminal of the protection element coupled to the first current carrying terminal of the first semiconductor device and to the second current carrying terminal of the second semiconductor device.

2. The semiconductor component of claim 1 , wherein the first semiconductor device is a first transistor, the second semiconductor device is a second transistor, and the silicon based semiconductor material is silicon of a first conductivity type.

3. The semiconductor component of claim 1 , wherein the first semiconductor device is a first transistor, the second semiconductor device is a second transistor, and the silicon based semiconductor material is an intrinsic semiconductor material.

4. The semiconductor component of claim 2 , wherein the first transistor, the second transistor, and the protection element are monolithically integrated.

5. The semiconductor component of claim 1 , wherein the protection element is one of a passive circuit element or an active circuit element.

6. The semiconductor component of claim 1 , wherein the III-N semiconductor material is configured for receiving a ground potential.

7. The semiconductor component of claim 1 , wherein the III-N semiconductor material is electrically coupled to the second current carrying terminal of the first semiconductor device.

8. The semiconductor component of claim 1 , wherein the protection element is a resistor.

9. The semiconductor component of claim 1 , wherein the protection element is a Zener diode.

10. The semiconductor component of claim 9 , wherein the first semiconductor device is a diode having a cathode and an anode, the cathode serving as the first current carrying terminal and the anode serving as the second current carrying terminal.

11. The semiconductor component of claim 1 , wherein the protection element comprises a transistor having a control electrode and first and second current carrying electrodes, the control electrode coupled to the first current carrying electrode and the second current carrying electrode coupled for receiving a first source of operating potential.

12. A semiconductor component, comprising:
a silicon based semiconductor device formed from a silicon semiconductor material and having first and second current carrying terminals;
a III-N based semiconductor device formed from a III-N semiconductor material and having a control terminal, a first current carrying terminal, a second current carrying terminal, and a body terminal, the first current carrying terminal of the silicon based semiconductor material coupled to the control terminal of the III-N based semiconductor device, the second current carrying terminal of the silicon based semiconductor device coupled to the first current carrying terminal of the III-N semiconductor device; and
means for directly connecting the III-N semiconductor material to the first terminal of the silicon based semiconductor device.

13. The semiconductor component of claim 12 , wherein the silicon based semiconductor device comprises a diode having an anode and a cathode and the III-N based semiconductor device comprises a field effect transistor having a gate, a source, and a drain, and wherein the anode of the diode serves as the first current carrying terminal of the silicon based semiconductor device, the cathode of the diode serves as the second current carrying electrode of the silicon based semiconductor device, the source of the field effect transistor serves as the first current carrying electrode of the III-N based semiconductor device, and the drain of the field effect transistor serves as the second current carrying electrode of the III-N based semiconductor device.

14. The semiconductor component of claim 13 , further including a current by-pass element coupled to the cathode of the diode.

15. The semiconductor component of claim 14 , wherein the current by-pass element comprises a resistor.

16. The semiconductor component of claim 14 , wherein the current by-pass element comprises a Zener diode having a cathode and an anode, the cathode of the Zener diode coupled to the cathode of the diode.

17. A semiconductor component, comprising:
a silicon based semiconductor device formed from a silicon semiconductor material and having first and second current carrying terminals, wherein the silicon based semiconductor device comprises a first field effect transistor having a gate, a source, and a drain;
a III-N based semiconductor device formed from a III-N semiconductor material and having a control terminal, a first current carrying terminal, a second current carrying terminal, and a body terminal, the first current carrying terminal of the silicon based semiconductor material coupled to the control terminal of the III-N based semiconductor device, the second current carrying terminal of the silicon based semiconductor device coupled to the first current carrying terminal of the III-N semiconductor device, wherein the III-N based semiconductor device comprises a second field effect transistor having a gate, a source, a drain, and the body terminal, and wherein the source of the first field effect transistor serves as the first current carrying terminal of the silicon semiconductor based device, the drain of the first field effect transistor serves as the second current carrying electrode of the silicon based semiconductor device, the source of the second field effect transistor serves as the first current carrying electrode of the III-N based semiconductor device, and the drain of the second field effect transistor serves as the second current carrying electrode of the III-N based semiconductor device; and
means for electrically connecting the III-N semiconductor material to the first terminal of the silicon based semiconductor device.

18. The semiconductor component of claim 17 , further including a current by-pass element coupled to the cathode of the diode, wherein the current by-pass element comprises one of a resistor, a Zener diode, or a diode connected transistor.

19. A cascode configured device having first, second, and third terminals, comprising:
a first semiconductor device formed from a silicon material, the first semiconductor device having at least first and second terminals; and
a second semiconductor device formed from a III-N semiconductor material, the second semiconductor device having first, second, third, and fourth terminals, the first terminal of the first semiconductor device coupled to the third terminal of the second semiconductor device, and the second terminal of the first semiconductor device coupled to the first terminal of

Assignees

• Semiconductor Components Ind Llc

Inventors

• Liu Chun-Li
• Salih Ali

Classifications

• H03K2217/0018

  Special modifications or use of the back gate voltage of a FET · CPC title

• H03K17/102

  in field-effect transistor switches · CPC title

• H01L29/205

  Electricity · mapped topic

• H01L29/866

  Electricity · mapped topic

• H01L29/7786

  Electricity · mapped topic