Integrated electronic device with transceiving antenna and magnetic interconnection

US9799630B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9799630-B2
Application numberUS-201615376485-A
CountryUS
Kind codeB2
Filing dateDec 12, 2016
Priority dateDec 30, 2008
Publication dateOct 24, 2017
Grant dateOct 24, 2017

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  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An embodiment of an integrated electronic device having a body, made at least partially of semiconductor material and having a top surface, a bottom surface, and a side surface, and a first antenna, which is integrated in the body and enables magnetic or electromagnetic coupling of the integrated electronic device with a further antenna. The integrated electronic device moreover has a coupling region made of magnetic material, which provides, in use, a communication channel between the first antenna and the further antenna.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor structure, comprising: a semiconductor layer having a top surface and a bottom surface; an insulating layer mounted to the top surface of the semiconductor layer; a first winding configured to generate a magnetic flux, said first winding positioned within the insulating layer; a magnetic region disposed in the semiconductor layer in alignment with the first winding; a first magnetic core positioned over the insulating layer and aligned with at least part of said first winding; and a second magnetic core positioned under the bottom surface of the semiconductor layer and aligned with at least a portion of the magnetic region. 2. The semiconductor structure of claim 1 , wherein said magnetic region has a bottom surface coplanar with the bottom surface of the semiconductor layer. 3. The semiconductor structure of claim 1 , wherein said magnetic region has a bottom surface offset from the bottom surface of the semiconductor layer. 4. The semiconductor structure of claim 1 , wherein said magnetic region extends within the insulating layer. 5. The semiconductor structure of claim 4 , wherein the first winding wraps around a portion of the magnetic region that extends within the insulating layer. 6. The semiconductor structure of claim 1 , further comprising a further magnetic region providing a closed magnetic path that passes through the first and second magnetic cores and said magnetic region. 7. The semiconductor structure of claim 6 , wherein said further magnetic region is disposed in the semiconductor layer. 8. The semiconductor structure of claim 6 , wherein said further magnetic region is positioned on a sidewall of the semiconductor layer that extends between the top and bottom surfaces. 9. A semiconductor structure, comprising: a first semiconductor substrate; a first winding mounted to the first semiconductor substrate; a second semiconductor substrate; a second winding mounted to the second semiconductor substrate; wherein the first and second semiconductor substrates are mounted one over a top of the other; a first magnetic region positioned within the first semiconductor substrate to support a mutual inductance between the first and second windings for wireless transmission of signals or power between the first and second windings. 10. The semiconductor structure of claim 9 , wherein the first winding has a first axis and the second winding has a second axis; and wherein the first and second axes pass through the first magnetic region. 11. The semiconductor structure of claim 10 , wherein the first and second axes are aligned. 12. The semiconductor structure of claim 9 , further comprising an adhesive layer for mounting the first and second semiconductor substrates one over the top of the other. 13. The semiconductor structure of claim 9 , wherein the first winding is provided within a first layer including metal lines and the second winding is provided within a second layer including metal lines. 14. The semiconductor structure of claim 13 , wherein the first magnetic region extends into the first layer and is surrounded by the first winding. 15. The semiconductor structure of claim 9 , wherein the first magnetic region has a bottom surface coplanar with a bottom surface of the first semiconductor substrate. 16. The semiconductor structure of claim 9 , further comprising a second magnetic region positioned within the second semiconductor substrate. 17. The semiconductor structure of claim 16 , wherein the first magnetic region has a bottom surface coplanar with a bottom surface of the first semiconductor substrate, the second magnetic region has a bottom surface coplanar with a bottom surface of the second semiconductor substrate, and the first and second semiconductor substrates are mounted one over top of the other with the bottom surfaces of the first and second semiconductor substrates facing each other. 18. The semiconductor structure of claim 17 , further comprising a structure for providing a close magnetic path which passes through the first and second magnetic regions. 19. The semiconductor structure of claim 17 , further comprising a magnetic layer extending between the first and second semiconductor substrates facing each other. 20. The semiconductor structure of claim 9 , wherein the first winding is provided in a first region including metal lines within an insulating material and the second winding is provided in a second region including metal lines within an insulating material. 21. The semiconductor structure of claim 20 , wherein the first magnetic region extends into the first region and is surrounded by the first winding. 22. A semiconductor structure, comprising: a semiconductor layer having a top surface and a bottom surface; an insulating layer mounted to the top surface of the semiconductor layer; a first winding configured to generate a magnetic flux, said first winding positioned within the insulating layer; a magnetic region disposed in the semiconductor layer in alignment with the first winding; a first magnetic core positioned over the insulating layer and aligned with at least part of said first winding; a second magnetic core positioned under the bottom surface of the semiconductor layer and aligned with at least a portion of the magnetic region; and a plurality of magnetic confinement vias extending into said insulating layer from a bottom surface of the first magnetic core, said confinement vias positioned outside of a periphery of the first winding. 23. The semiconductor structure of claim 22 , wherein said magnetic region has a bottom surface coplanar with the bottom surface of the semiconductor layer. 24. The semiconductor structure of claim 22 , wherein said magnetic region has a bottom surface offset from the bottom surface of the semiconductor layer. 25. The semiconductor structure of claim 22 , wherein said magnetic region extends within the insulating layer. 26. The semiconductor structure of claim 25 , wherein the first winding wraps around a portion of the magnetic region that extends within the insulating layer. 27. The semiconductor structure of claim 22 , further comprising a further magnetic region providing a closed magnetic path that passes through the first and second magnetic cores and said magnetic region. 28. The semiconductor structure of claim 27 , wherein said further magnetic region is disposed in the semiconductor layer. 29. The semiconductor structure of claim 27 , wherein said further magnetic region is positioned on a sidewall of the semiconductor layer that extends between the top and bottom surfaces.

Assignees

Inventors

Classifications

  • Wireless interface with the DUT · CPC title

  • the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support (on an elastic support, e.g. a film, G01R1/0735) · CPC title

  • Structural form of radiating elements, e.g. cone, spiral, umbrella; {Particular materials used therewith}(H01Q1/08, H01Q1/14 take precedence) · CPC title

  • mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package · CPC title

  • Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop · CPC title

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What does patent US9799630B2 cover?
An embodiment of an integrated electronic device having a body, made at least partially of semiconductor material and having a top surface, a bottom surface, and a side surface, and a first antenna, which is integrated in the body and enables magnetic or electromagnetic coupling of the integrated electronic device with a further antenna. The integrated electronic device moreover has a coupling …
Who is the assignee on this patent?
St Microelectronics Srl
What technology area does this patent fall under?
Primary CPC classification H10W90/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 24 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).