Methods employing sacrificial barrier layer for protection of vias during trench formation

Patent metadata

Field	Value
Publication number	US-9799559-B1
Application number	US-201615158827-A
Country	US
Kind code	B1
Filing date	May 19, 2016
Priority date	May 19, 2016
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A method includes, for example, providing an intermediate semiconductor structure comprising a metallic layer, a patternable layer disposed over the metallic layer, and a hard mask disposed over the patternable layer, the intermediate semiconductor structure comprising a plurality of vias extending through the hard mask onto the metallic layer, depositing a sacrificial barrier layer over the intermediate semiconductor structure and in the plurality of vias, removing a portion of the sacrificial barrier layer between the plurality of vias while maintaining a portion of the sacrificial barrier layer in the plurality of vias, forming a trench in the patternable layer between the removed portion of the sacrificial barrier layer and the plurality of vias, and removing the remaining portions of the sacrificial barrier layer from the plurality of vias.

First claim

The invention claimed is:

1. A method comprising:
providing an intermediate semiconductor structure comprising an interconnecting conductive structure, a dielectric layer and a patternable layer disposed over the interconnecting conductive structure, and a hard mask disposed over the patternable layer, the intermediate semiconductor structure comprising a plurality of vias extending through the hard mask, the patternable layer, the dielectric layer, and opening directly onto the interconnecting conductive structure;
depositing a sacrificial barrier layer over the intermediate semiconductor structure and in the plurality of vias and directly on the interconnecting conductive structure;
first removing an upper portion of the sacrificial barrier layer between the plurality of vias while maintaining a lower portion of the sacrificial barrier layer directly on the interconnecting conductive structure in the plurality of vias;
forming a trench in the patternable layer between the removed portion of the sacrificial barrier layer and the plurality of vias while maintaining the lower portion of the sacrificial barrier layer directly on the interconnecting conductive structure in the plurality of vias; and
second removing the remaining lower portions of the sacrificial barrier layer from the plurality of vias to expose the interconnecting conductive structure at the bottom of the vias.

2. The method of claim 1 wherein the sacrificial barrier layer is non-reactive with patternable layer forming sides of the plurality of vias.

3. The method of claim 1 wherein the sacrificial barrier layer is non-reactive with the interconnecting conductive structure.

4. The method of claim 1 wherein the sacrificial barrier layer is non-reactive with the forming the trench in the patternable layer.

5. The method of claim 1 wherein a spacing between one of the plurality of vias and the trench is less than about 20 nanometers.

6. The method of claim 1 wherein the sacrificial barrier layer comprises an atomic layer deposition (ALD).

7. The method of claim 1 wherein the sacrificial barrier layer comprises AlN or TiN.

8. The method of claim 7 wherein the removing portions of the sacrificial barrier layer comprises removing portions of the sacrificial barrier layer corresponding to the trench patterning memorization.

9. The method of claim 1 wherein the multilayer stack structure comprises a trench patterning memorization corresponding to the trench.

10. The method of claim 1 wherein the forming the trenches comprises etching.

11. The method of claim 1 further comprising filling the plurality of vias in the patternable layer with a conductive material.

12. The method of claim 1 further comprising filling the trench in the patternable layer with a conductive or non-conductive material.

13. The method of claim 1 wherein:
the depositing comprises depositing a fill material over the sacrificial barrier layer and in a plurality of cavities defined by the sacrificial barrier layer in the plurality of vias;
the first removing comprises removing a portion of the fill material and the portion of the sacrificial barrier layer between the plurality of vias while maintaining a portion of the sacrificial barrier layer and a portion of the fill material in the plurality of vias; and
the second removing comprises removing the remaining fill material and the remaining portions of the sacrificial barrier layer from the plurality of vias.

14. The method of claim 13 wherein the sacrificial barrier layer is non-reactive with patternable layer forming sides of the plurality of vias.

15. The method of claim 13 wherein the sacrificial barrier layer is non-reactive with the interconnecting conductive structure.

16. The method of claim 13 wherein the sacrificial barrier layer is non-reactive with the forming the trench in the patternable layer.

17. The method of claim 13 wherein the sacrificial barrier layer comprises an atomic layer deposition (ALD).

18. The method of claim 17 wherein the sacrificial barrier layer comprises AlN or TiN.

19. The method of claim 13 wherein a distance from the via to the trench is less than about 20 nanometers.

20. The method of claim 13 further comprising filling in the plurality of vias with a conductive material and filling the trenches with a dielectric or a conductive material.

Assignees

• Globalfoundries Inc
• IBM

Inventors

• Siddiqui Shariq
• Mont Frank W
• Zhang Xunyuan
• Peethala Brown
• Trickett Douglas M

Classifications

• H10W20/054

  by selectively removing parts thereof (H10W20/034 takes precedence) · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/4421

  the principal metal being copper · CPC title

• H10W20/4407

  Aluminium alloys · CPC title