CMP polishing solution and polishing method

Patent metadata

Field	Value
Publication number	US-9799532-B2
Application number	US-201113510273-A
Country	US
Kind code	B2
Filing date	Jan 4, 2011
Priority date	Feb 15, 2010
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

The CMP polishing liquid of the invention comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains. The polishing method of the invention comprises a step of polishing at least a palladium layer with an abrasive cloth while supplying a CMP polishing liquid between the palladium layer of a substrate having the palladium layer and the abrasive cloth, wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, a phosphorus acid, an oxidizing agent and abrasive grains.

First claim

The invention claimed is:

1. A CMP polishing liquid, for polishing a metal, comprising:
a metal salt containing at least one type of metal selected from the group consisting of silver and metals of Groups 12 and 13,
1,2,4-triazole,
phosphoric acid,
hydrogen peroxide, and
abrasive grains,
wherein a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

2. The CMP polishing liquid according to claim 1 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

3. The CMP polishing liquid according to claim 1 , which is for polishing of a palladium layer.

4. The CMP polishing liquid according to claim 1 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

5. The CMP polishing liquid according to claim 1 , wherein 1,2,4-triazole coordinates with the metal to be polished to form a complex.

6. A polishing method comprising a step of polishing at least a palladium layer with a polishing cloth while supplying a CMP polishing liquid between the palladium layer of a substrate and the polishing cloth,
wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of silver and metals of Groups 12 and 13, 1,2,4-triazole, phosphoric acid, hydrogen peroxide and abrasive grains,
a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

7. The polishing method according to claim 6 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

8. The polishing method according to claim 6 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

9. The polishing method according to claim 6 , wherein 1,2,4-triazole coordinates with palladium of the palladium layer to form a complex.

10. A CMP polishing liquid comprising:
a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13,
1,2,4-triazole,
phosphoric acid,
hydrogen peroxide and abrasive grains, wherein
pH of the CMP polishing liquid is not greater than 5, and
a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

11. The CMP polishing liquid according to claim 10 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

12. The CMP polishing liquid according to claim 10 , which is for polishing of a palladium layer.

13. The CMP polishing liquid according to claim 10 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

14. The CMP polishing liquid according to claim 10 , wherein 1,2,4-triazole coordinates with the metal to be polished to form a complex.

15. A polishing method comprising a step of polishing at least a palladium layer with a polishing cloth while supplying a CMP polishing liquid between the palladium layer of a substrate and the polishing cloth,
wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, phosphoric acid, hydrogen peroxide and abrasive grains,
pH of the CMP polishing liquid is not greater than 5,
a content of the metal salt is 2×10 4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

16. The polishing method according to claim 15 , wherein the abrasive grains include at least one type selected from the group consisting of alumina, silica, zirconia, titania and ceria.

17. The polishing method according to claim 15 , wherein the metal salt is selected from the group consisting of aluminum chloride, aluminum sulfate, aluminum acetate, aluminum lactate, potassium aluminum alum, ammonium aluminum alum, potassium aluminate, sodium aluminate, and a metal salt containing silver.

18. The polishing method according to claim 15 , wherein 1,2,4-triazole coordinates with palladium of the palladium layer to form a complex.

19. A polishing method comprising the steps of:
preparing a substrate having at least a palladium layer and a metal layer selected from the group consisting of a nickel layer, a tantalum layer and a cobalt layer;
polishing at least the palladium layer and the metal layer with a polishing cloth while supplying a CMP polishing liquid between a side of the palladium layer of the substrate and the polishing cloth, and
wherein the CMP polishing liquid comprises a metal salt containing at least one type of metal selected from the group consisting of metals of Groups 8, 11, 12 and 13, 1,2,4-triazole, phosphoric acid, hydrogen peroxide and abrasive grains,
a content of the metal salt is 2×10 −4 to 5 mol per kg of the CMP polishing liquid, a content of 1,2,4-triazole is 0.05-10 mass % based on the total mass of the CMP polishing liquid, a content of phosphoric acid is 0.02-10 mass % based on the total mass of the CMP polishing liquid, a content of hydrogen peroxide is 0.1-10 mass % based on the total mass of the CMP polishing liquid, and a content of the abrasive grains is 0.2-8 mass % based on a total mass of the CMP polishing liquid.

20. The polishing method according to claim 19 , wherein the abrasive grains include at least one type selected from the group consisting of alumi

Assignees

• Minami Hisataka
• Amanokura Jin
• Anzai Sou
• Hitachi Chemical Co Ltd

Inventors

• Minami Hisataka
• Amanokura Jin
• Anzai Sou

Classifications

• H10P95/04

  Planarisation of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10P52/403 Primary

  of conductive or resistive materials · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title