Cleaning liquid for lithography and method for cleaning substrate

Patent metadata

Field	Value
Publication number	US-9796953-B2
Application number	US-201514925034-A
Country	US
Kind code	B2
Filing date	Oct 28, 2015
Priority date	Oct 31, 2014
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof.

First claim

What is claimed is:

1. A cleaning liquid comprising:
hydroxylamine;
a basic compound; and
water,
wherein the basic compound is at least one compound selected from the group consisting of amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and
a pH value is 11 or higher, wherein a content of the hydroxylamine is not less than 6% by mass.

2. The cleaning liquid according to claim 1 , wherein the cleaning liquid is for lithography.

3. The cleaning liquid according to claim 1 , wherein the cleaning liquid is used to clean a substrate containing at least one metal selected from the group consisting of cobalt and alloys thereof.

4. The cleaning liquid according to claim 1 , further comprising an organic acid.

5. The cleaning liquid according to claim 1 , wherein the amine compound has a cyclic structure.

6. The cleaning liquid according to claim 1 , further comprising a water-soluble organic solvent.

7. A method for cleaning a substrate, the method comprising:
cleaning the surface of a substrate having a metallic area using the cleaning liquid, wherein
the metallic area has, on at least a part of a surface thereof, a metallic layer formed of at least one metal selected from the group consisting of cobalt and alloys thereof,
the cleaning liquid comprises hydroxylamine; a basic compound; and water, and has a pH value of 8 or higher,
a content of the hydroxylamine is not less than 6% by mass based on the cleaning liquid, and
the basic compound is at least one selected from the group consisting of an amine compound other than hydroxylamine, and quaternary ammonium hydroxides.

8. A method for cleaning a substrate, the method comprising:
forming an etching mask layer of a predetermined pattern on a surface of a substrate having a metallic area;
etching the substrate exposed from the etching mask layer; and
cleaning the etched substrate with the cleaning liquid, wherein
the metallic area has, on at least a part of a surface thereof, a metallic layer formed of at least one metal selected from the group consisting of cobalt and alloys thereof, and
in the cleaning, at least a part of the metallic layer is exposed on the surface of the substrate,
the cleaning liquid comprises hydroxylamine; a basic compound; and water, and has a pH value of 8 or higher,
a content of the hydroxylamine is not less than 6% by mass based on the cleaning liquid, and
the basic compound is at least one selected from the group consisting of an amine compound other than hydroxylamine, and quaternary ammonium hydroxides.

9. A method for etching a substrate, the method comprising:
forming an etching mask layer of a predetermined pattern on the surface of a substrate having a metallic area;
etching the substrate exposed from the etching mask layer; and
cleaning the etched substrate with the cleaning liquid, wherein
the metallic area has, on at least a part of a surface thereof, a metallic layer formed of at least one metal selected from the group consisting of cobalt and alloys thereof, and
in the cleaning, at least a part of the metallic layer is exposed on the surface of the substrate,
the cleaning liquid comprises hydroxylamine; a basic compound; and water, and has a pH value of 8 or higher,
a content of the hydroxylamine is not less than 6% by mass based on the cleaning liquid, and
the basic compound is at least one compound selected from the group consisting of an amine compound other than hydroxylamine, and quaternary ammonium hydroxides.

10. A lithography method comprising performing lithography using the cleaning liquid according to claim 1 .

11. A method for cleaning a substrate, the method comprising cleaning a substrate containing at least one metal selected from the group consisting of cobalt and alloys thereof with the cleaning liquid,
the cleaning liquid comprises hydroxylamine; a basic compound; and water, and has a pH value of 8 or higher,
a content of the hydroxylamine is not less than 6% by mass of the cleaning liquid, and
the basic compound is at least one compound selected from the group consisting of an amine compound other than hydroxylamine, and quaternary ammonium hydroxides.

12. A cleaning liquid comprising:
hydroxylamine;
an amine compound having a cyclic structure; and
water,
wherein the amine compound having a cyclic structure is at least one compound selected from the group consisting of tetrahydrofurfurylamine, N-(2-aminoethyl)piperazine, 1,8-diazabicyclo[5.4.0]undecene-7, 1,4-diazabicyclo[2.2.2]octane, hydroxyethylpiperazine, piperazine, 2-methylpiperazine, trans-2,5-dimethylpiperazine, cis-2,6-dimethylpiperazine, 2-piperidine methanol, and 1,5-diazabicyclo[4,3,0]nonene-5, and
a pH value is 8 or higher.

13. The cleaning liquid according to claim 12 , further comprising a quaternary ammonium hydroxide.

14. A method for cleaning a substrate, the method comprising cleaning the surface of a substrate having a metallic area using a cleaning liquid according to claim 12 , wherein the metallic area has, on at least a part of a surface thereof, a metallic layer formed of at least one metal selected from the group consisting of cobalt and alloys thereof.

15. A method for cleaning a substrate, the method comprising:
forming an etching mask layer of a predetermined pattern on a surface of a substrate having a metallic area;
etching the substrate exposed from the etching mask layer; and
cleaning the etched substrate with a cleaning liquid according to claim 12 ,
wherein the metallic area has, on at least a part of a surface thereof, a metallic layer formed of at least one metal selected from the group consisting of cobalt and alloys thereof, and in the cleaning, at least a part of the metallic layer is exposed on the surface of the substrate.

16. A method of etching a substrate, the method comprising:
forming an etching mask layer of a predetermined pattern on the surface of a substrate having a metallic area;
etching the substrate exposed from the etching mask layer; and
cleaning the etched substrate with a cleaning liquid according to claim 12 ,
wherein the metallic area has, on at least a part of a surface thereof, a metallic layer formed of at least one metal selected from the group consisting of cobalt and alloys thereof, and in the cleaning, at least a part of the metallic layer is exposed on the surface of the substrate.

17. A lithography method comprising performing lithography using a cleaning liquid according to claim 12 .

18. A method for cleaning a substrate, the method comprising cleaning a substrate containing at least one metal selected from the group consisting of cobalt and alloys thereof with a cleaning liquid according to claim 12 .

Assignees

• Tokyo Ohka Kogyo Co Ltd

Inventors

• Kumagai Tomoya
• Ueno Naohisa
• Sugawara Mai

Classifications

• C23G1/16

  using inhibitors · CPC title

• C23F11/10

  using organic inhibitors · CPC title

• C11D7/5022

  containing oxygen · CPC title

• C11D7/3281 Primary

  Heterocyclic compounds · CPC title

• C11D7/3209

  Amines or imines with one to four nitrogen atoms; Quaternized amines · CPC title