Display device including light-emitting layer

Patent metadata

Field	Value
Publication number	US-9793329-B2
Application number	US-201615212633-A
Country	US
Kind code	B2
Filing date	Jul 18, 2016
Priority date	Oct 16, 2008
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 μm to 200 μm inclusive. Further, an electronic device using the flexible light-emitting device is provided.

First claim

What is claimed is:

1. A display device comprising:
a first film comprising a resin;
a second film over and in contact with the first film, the second film has a stacked structure comprising a silicon nitride layer between layers which each comprise a material represented by SiOxNy, where x is larger than y;
a semiconductor film over and in contact with the second film, the semiconductor film comprising polysilicon;
a gate insulating film over and in contact with the semiconductor film, the gate insulating film comprising a material represented by SiOxNy, where x is larger than y;
a gate electrode over and in contact with the gate insulating film, the gate electrode comprising a metal selected from W, Al, Ta, Mo, and Ti;
an insulating film over and in contact with the gate electrode, the insulating film comprising:
a first layer comprising a material represented by SiNyOx, where y is larger than x; and
a second layer over the first layer, the second layer comprising a material represented by SiOxNy, where x is larger than y;

a source electrode and a drain electrode over the insulating film; and
a light-emitting element electrically connected to one of the source electrode and the drain electrode, the light-emitting element comprising:
a first electrode comprising indium-tin-oxide;
a second electrode comprising Ag; and
an EL layer between the first electrode and the second electrode.

2. The display device according to claim 1 , further comprising:
an adhesive layer over and in contact with the light-emitting element; and
a flexible metal film over and in contact with the adhesive layer.

3. The display device according to claim 1 , wherein the light-emitting element is a bottom-emission type light-emitting element.

4. The display device according to claim 1 , wherein the light-emitting element is a white-emissive light-emitting element.

5. The display device according to claim 1 , further comprising a transparent conductive film under the first film.

6. An electronic device comprising:
a display portion comprising the display device according to claim 1 ,
wherein the display device is deformed and is disposed along a curved surface of the electronic device.

7. The electronic device according to claim 6 , wherein the electronic device is a portable information terminal.

8. A display device comprising:
a flexible substrate;
a first insulating layer over the flexible substrate;
a second insulating layer over the first insulating layer;
a third insulating layer over the second insulating layer;
a fourth insulating layer over the third insulating layer;
a semiconductor film over the fourth insulating layer;
a gate insulating film over the semiconductor film;
a gate electrode over the gate insulating film;
a fifth insulating layer over the gate electrode;
a sixth insulating layer over the fifth insulating layer;
a first conductive film over the sixth insulating layer, the first conductive film being electrically connected to the semiconductor film;
a second conductive film over the sixth insulating layer, the second conductive film being electrically connected to the semiconductor film;
a first electrode electrically connected to one of the first conductive film and the second conductive film;
a seventh insulating layer over the first electrode;
a light-emitting layer over the first electrode and the seventh insulating layer; and
a second electrode over the light-emitting layer,
wherein oxygen content in the first insulating layer is larger than nitrogen content in the first insulating layer,
wherein nitrogen content in the second insulating layer is larger than oxygen content in the second insulating layer,
wherein nitrogen content in the third insulating layer is larger than oxygen content in the third insulating layer,
wherein oxygen content in the fourth insulating layer is larger than nitrogen content in the fourth insulating layer,
wherein oxygen content in the fifth insulating layer is larger than nitrogen content in the fifth insulating layer, and
wherein nitrogen content in the sixth insulating layer is larger than oxygen content in the sixth insulating layer.

9. The display device according to claim 8 , wherein the semiconductor film comprises polysilicon.

10. The display device according to claim 8 ,
wherein the first insulating layer is a silicon oxynitride layer,
wherein the second insulating layer is a silicon nitride layer,
wherein the third insulating layer is a silicon nitride oxide layer,
wherein the fourth insulating layer is a silicon oxynitride layer,
wherein the fifth insulating layer is a silicon oxynitride layer, and
wherein the sixth insulating layer is a silicon nitride oxide layer.

11. An electronic device comprising:
a display portion comprising the display device according to claim 8 ,
wherein the display device is deformed and is disposed along a curved surface of the electronic device.

12. A display device comprising:
a first insulating layer;
a second insulating layer over the first insulating layer;
a third insulating layer over the second insulating layer;
a fourth insulating layer over the third insulating layer;
a semiconductor film over the fourth insulating layer;
a gate insulating film over the semiconductor film;
a gate electrode over the gate insulating film;
a fifth insulating layer over the gate electrode;
a sixth insulating layer over the fifth insulating layer;
a first conductive film over the sixth insulating layer, the first conductive film being electrically connected to the semiconductor film;
a second conductive film over the sixth insulating layer, the second conductive film being electrically connected to the semiconductor film;
a first electrode electrically connected to one of the first conductive film and the second conductive film;
a seventh insulating layer over the first electrode;
a light-emitting layer over the first electrode and the seventh insulating layer; and
a second electrode over the light-emitting layer,
wherein oxygen content in the first insulating layer is larger than nitrogen content in the first insulating layer,
wherein nitrogen content in the second insulating layer is larger than oxygen content in the second insulating layer,
wherein nitrogen content in the third insulating layer is larger than oxygen content in the third insulating layer,
wherein oxygen content in the fourth insulating layer is larger than nitrogen content in the fourth insulating layer,
wherein oxygen content in the fifth insulating layer is larger than nitrogen content in the fifth insulating layer,
wherein nitrogen content in the sixth insulating layer is larger than oxygen content in the sixth insulating layer, and
wherein the display device is configured to display in a state where the display device is curved.

13. The display device according to claim 12 , wherein the semiconductor film comprises polysilicon.

14. The display device according to claim 12 ,
wherein the first insulating layer is a silicon oxynitride layer,
wherein the second insulating layer is a silicon nitride layer,
wherein the third insulating layer is a silicon nitride oxide layer,
wherein the fourth insulating layer is a silicon oxynitride layer,
wherein the fifth insulating layer is a silicon oxynitride layer, and
wherein the sixth insulating layer is a silicon nitride oxide layer.

15. An electronic device comprising:
a display portion comprising the display device according to claim 12 ,
wherein the display device is deformed and is disposed along a curved surface of the elec

Assignees

• Semiconductor Energy Lab

Inventors

• Hatano Kaoru
• Seo Satoshi
• Nagata Takaaki
• Okano Tatsuya

Classifications

• G02F1/136209

  Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• G06F1/1641

  the display being formed by a plurality of foldable display components (G06F1/1647 takes precedence) · CPC title

• H01L27/3244

  Electricity · mapped topic

• H01L33/48

  Electricity · mapped topic