Reducing or eliminating pre-amorphization in transistor manufacture

Patent metadata

Field	Value
Publication number	US-9793172-B2
Application number	US-201615298933-A
Country	US
Kind code	B2
Filing date	Oct 20, 2016
Priority date	May 16, 2011
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

A method for fabricating field effect transistors using carbon doped silicon layers to substantially reduce the diffusion of a doped screen layer formed below a substantially undoped channel layer includes forming an in-situ epitaxial carbon doped silicon substrate that is doped to form the screen layer in the carbon doped silicon substrate and forming the substantially undoped silicon layer above the carbon doped silicon substrate. The method may include implanting carbon below the screen layer and forming a thin layer of in-situ epitaxial carbon doped silicon above the screen layer. The screen layer may be formed either in a silicon substrate layer or the carbon doped silicon substrate.

First claim

What is claimed is:

1. A method for forming a plurality of FETs in a substrate, comprising:
forming at least one PMOS FET; and
forming at least one NMOS FET, the forming at least one NMOS FET includes:
implanting a dopant to form an NMOS antipunchthrough layer;
implanting a dopant to form an NMOS screen layer;
forming a carbon-containing region above and below the NMOS screen layer, wherein the carbon-containing region is operable to substantially limit diffusion of the NMOS screen layer dopants;
annealing using a low thermal budget anneal; and
depositing a substantially undoped epitaxial silicon layer on the carbon-containing region; and
forming trench isolation structures to electrically isolate the plurality of FETs from one another.

2. The method of claim 1 , wherein the carbon-containing region is formed using ion implantation.

3. The method of claim 1 , wherein the annealing includes using solid phase epitaxy at a temperature of between 500 and 800 degrees Celsius.

4. The method of claim 1 , wherein the annealing includes using a rapid thermal anneal at a temperature of between 900 and 1250 degrees Celsius.

5. The method of claim 1 , wherein the depositing of the substantially undoped epitaxial silicon layer includes using selective epitaxial growth.

6. The method of claim 1 , further comprising forming a threshold voltage set layer positioned between the NMOS screen layer and the substantially undoped epitaxial silicon layer.

Assignees

• Mie Fujitsu Semiconductor Ltd

Inventors

• Scudder Lance
• Ranade Pushkar
• Stager Charles
• Sridharan Urupattur C
• Zhao Dalong

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204 Primary

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P14/3822

  Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing · CPC title