Lift-off method

Patent metadata

Field	Value
Publication number	US-9793166-B2
Application number	US-201514716149-A
Country	US
Kind code	B2
Filing date	May 19, 2015
Priority date	May 19, 2014
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, the optical device layer being formed on the front side of an epitaxy substrate through a buffer layer. A transfer substrate is bonded through a bonding layer to the front side of the optical device layer of the optical device wafer, thereby forming a composite substrate. A pulsed laser beam having a wavelength transmissive to the epitaxy substrate and absorptive to the buffer layer is applied from the back side of the epitaxy substrate to the buffer layer, thereby breaking the buffer layer, and the epitaxy substrate is peeled from the optical device layer, thereby transferring the optical device layer to the transfer substrate. Ultrasonic vibration is applied to the composite substrate in transferring the optical device layer.

First claim

What is claimed is:

1. A lift-off method for transferring an optical device layer in an optical device wafer to a transfer substrate, said optical device layer being formed on a front side of an epitaxy substrate through a buffer layer, said lift-off method comprising:
a transfer substrate bonding step of bonding said transfer substrate through a bonding layer to a front side of said optical device layer of said optical device wafer, thereby forming a composite substrate;
a buffer layer breaking step of applying a pulsed laser beam having a wavelength transmissive to said epitaxy substrate and absorptive to said buffer layer from a back side of said epitaxy substrate to said buffer layer after performing said transfer substrate bonding step, thereby breaking said buffer layer; and
an optical device layer transferring step of peeling said epitaxy substrate from said optical device layer after performing said buffer layer breaking step, thereby transferring said optical device layer to said transfer substrate;
wherein ultrasonic vibration is applied to said composite substrate in performing said optical device layer transferring step.

2. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
applying ultrasonic vibration to at least one of said epitaxy substrate and said transfer substrate constituting said composite substrate;
inserting a wedge into said buffer layer present at the boundary between said epitaxy substrate and said transfer substrate; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

3. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
applying first ultrasonic vibration to at least one of said epitaxy substrate and said transfer substrate constituting said composite substrate;
inserting a wedge into said buffer layer present at the boundary between said epitaxy substrate and said transfer substrate;
applying second ultrasonic vibration to said wedge; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

4. The lift-off method according to claim 3 , wherein the frequency of said first ultrasonic vibration is set different from the frequency of said second ultrasonic vibration.

5. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
inserting a wedge into said buffer layer present at the boundary between said epitaxy substrate and said transfer substrate constituting said composite substrate;
applying ultrasonic vibration to said wedge; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

6. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
inserting a wedge into said buffer layer present at the boundary between said epitaxy substrate and said transfer substrate constituting said composite substrate, said wedge having a fine hole opening to a front end of said wedge;
issuing a jet of air from the front opening of said fine hole of said wedge;
applying ultrasonic vibration to said wedge; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

7. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
inserting a wedge into said buffer layer present at the boundary between said epitaxy substrate and said transfer substrate constituting said composite substrate, said wedge having a fine hole opening to a front end of said wedge;
issuing a jet of water from the front opening of said fine hole of said wedge;
applying ultrasonic vibration to said wedge; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

8. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
immersing said composite substrate in water;
applying ultrasonic vibration to said composite substrate; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

9. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
heating said composite substrate;
applying ultrasonic vibration to at least one of said epitaxy substrate and said transfer substrate constituting said composite substrate; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

10. The lift-off method according to claim 1 , wherein said optical device layer transferring step comprises the steps of:
applying first ultrasonic vibration to said epitaxy substrate constituting said composite substrate;
applying second ultrasonic vibration to said transfer substrate constituting said composite substrate; and
peeling said epitaxy substrate from said optical device layer to thereby transfer said optical device layer to said transfer substrate.

11. The lift-off method according to claim 10 , wherein the frequency of said first ultrasonic vibration is set different from the frequency of said second ultrasonic vibration.

Assignees

• Disco Corp

Inventors

• Koyanagi Tasuku
• Takeda Noboru
• Morikazu Hiroshi

Classifications

• H10P72/7444

  using a peeling wedge, a knife or a bar · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P90/1914

  using bonding · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10P54/00 Primary

  Cutting or separating of wafers, substrates or parts of devices · CPC title