Solder material and bonded structure
US-2015144388-A1 · May 28, 2015 · US
US9789569B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9789569-B2 |
| Application number | US-201514920772-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 22, 2015 |
| Priority date | Nov 27, 2013 |
| Publication date | Oct 17, 2017 |
| Grant date | Oct 17, 2017 |
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Solder material used in soldering of an Au electrode including Ni plating containing P includes Ag satisfying 0.3≦[Ag]≦4.0, Bi satisfying 0≦[Bi]≦1.0, and Cu satisfying 0<[Cu]≦1.2, where contents (mass %) of Ag, Bi, Cu and In in the solder material are denoted by [Ag], [Bi], [Cu], and [In], respectively. The solder material includes In in a range of 6.0≦[In]≦6.8 when [Cu] falls within a range of 0<[Cu]<0.5, In in a range of 5.2+(6−(1.55×[Cu]+4.428))≦[In]≦6.8 when [Cu] falls within a range of 0.5≦[Cu]≦1.0, In in a range of 5.2≦[In]≦6.8 when [Cu] falls within a range of 1.0<[Cu]≦1.2. A balance includes only not less than 87 mass % of Sn.
Opening claim text (preview).
What is claimed is: 1. Solder material used in soldering a component electrode and a substrate electrode, where the component electrode includes an Au electrode and a Cu electrode, or the substrate electrode includes an Au electrode and a Cu electrode, the solder material comprising: Ag (silver) satisfying 0.3≦[Ag]<4.0; where 0.5 mass % and 1.0 mass % of Ag are excluded, Bi (bismuth) satisfying 0≦[Bi]≦1.0; Cu (copper) satisfying 0.2≦[Cu]≦1.2; In (indium) in a range of 6.0≦[In]6.8 when [Cu] falls within a range of 0.2≦[Cu]<0.5; In in a range of 5.2+(6−(1.55×[Cu]+4.428))≦[In]6.8 when [Cu] falls within a range of 0.5[Cu]1.0; and In in a range of 5.2≦[In]≦6.8 when [Cu] falls within a range of 1.0<[Cu]≦1.2, with a balance including 87≦[Sn], where contents (mass %) of Ag, Bi, Cu, In, and Sn (tin) in the solder material are denoted by [Ag], [Bi], [Cu], [In] and [Sn], respectively. 2. The solder material of claim 1 , wherein Ag satisfies 0.5≦[Ag]≦3.8, Bi satisfies 0.2≦[Bi]≦1.0, In satisfies 6.0≦[In]≦6.8, Cu satisfies 0.2≦[Cu]≦1.2, and a balance includes only not less than 87.2 mass % of Sn. 3. The solder material of claim 1 , wherein Ag satisfies 1.8≦[Ag]≦3.8, Bi satisfies 0.2≦[Bi]≦1.0, In satisfies 6.0≦[In]≦6.7, Cu satisfies 0.8≦[Cu]≦1.2, and a balance includes only not less than 87.3 mass % of Sn. 4. The solder material of claim 1 , wherein Ag satisfies 3.5≦[Ag]≦3.8, Bi satisfies 0.6≦[Bi]≦1.0, In satisfies 6.0≦[In]≦6.1, Cu satisfies 1.1≦[Cu]≦1.2, and a balance includes only not less than 87.9 mass % of Sn. 5. The solder material of claim 1 , wherein Bi satisfies [Bi]=0, Ag satisfies 0.5[Ag]≦3.2, In satisfies 6.0[In]≦6.8, Cu satisfies 0.6[Cu]≦1.1, and a balance includes only not less than 88.9 mass % of Sn. 6. The solder material of claim 1 , wherein Bi satisfies [Bi]=0, Ag satisfies 2.8[Ag]≦3.2, In satisfies 6.0[In]≦6.2, Cu satisfies 0.85[Cu]≦1.1, and a balance includes only not less than 89.5 mass % of Sn. 7. A bonded structure comprising: solder material defined in claim 1 ; an electronic circuit board having a plurality of substrate electrodes; and an electronic component having a plurality of component electrodes, wherein any of the plurality of substrate electrodes and the plurality of component electrodes is the Au electrode including Ni plating containing P (phosphorous), and the plurality of substrate electrodes and the plurality of component electrodes are bonded to each other with the solder material. 8. A bonded structure comprising: solder material defined in claim 2 ; an electronic circuit board having a plurality of substrate electrodes; and an electronic component having a plurality of component electrodes, wherein any of the plurality of substrate electrodes and the plurality of component electrodes is the Au electrode including Ni plating containing P (phosphorous), and the plurality of substrate electrodes and the plurality of component electrodes are bonded to each other with the solder material. 9. A bonded structure comprising: solder material defined in claim 3 ; an electronic circuit board having a plurality of substrate electrodes; and an electronic component having a plurality of component electrodes, wherein any of the plurality of substrate electrodes and the plurality of component electrodes is the Au electrode including Ni plating containing P (phosphorous), and the plurality of substrate electrodes and the plurality of component electrodes are bonded to each other with the solder material. 10. A bonded structure comprising: solder material defined in claim 4 ; an electronic circuit board having a plurality of substrate electrodes; and an electronic component having a plurality of component electrodes, wherein any of the plurality of substrate electrodes and the plurality of component electrodes is the Au electrode including Ni plating containing P (phosphorous), and the plurality of substrate electrodes and the plurality of component electrodes are bonded to each other with the solder material. 11. A bonded structure comprising: solder material defined in claim 5 ; an electronic circuit board having a plurality of substrate electrodes; and an electronic component having a plurality of component electrodes, wherein any of the plurality of substrate electrodes and the plurality of component electrodes is the Au electrode including Ni plating containing P (phosphorous), and the plurality of substrate electrodes and the plurality of component electrodes are bonded to each other with the solder material. 12. A bonded structure comprising: solder material defined in claim 6 ; an electronic circuit board having a plurality of substrate electrodes; and an electronic component having a plurality of component electrodes, wherein any of the plurality of substrate electrodes and the plurality of component electrodes is the Au electrode including Ni plating containing P (phosphorous), and the plurality of substrate electrodes and the plurality of component electrodes are bonded to each other with the solder material.
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