Diagnostic device, semiconductor manufacturing equipment system, semiconductor equipment manufacturing system, and diagnostic method
US-2024321608-A1 · Sep 26, 2024 · US
US9787913B1 · US · B1
| Field | Value |
|---|---|
| Publication number | US-9787913-B1 |
| Application number | US-201514727383-A |
| Country | US |
| Kind code | B1 |
| Filing date | Jun 1, 2015 |
| Priority date | Jan 8, 2010 |
| Publication date | Oct 10, 2017 |
| Grant date | Oct 10, 2017 |
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Methods and systems for converting an image contrast evolution of an object to a temperature contrast evolution and vice versa are disclosed, including methods for assessing an emissivity of the object; calculating an afterglow heat flux evolution; calculating a measurement region of interest temperature change; calculating a reference region of interest temperature change; calculating a reflection temperature change; calculating the image contrast evolution or the temperature contrast evolution; and converting the image contrast evolution to the temperature contrast evolution or vice versa, respectively.
Opening claim text (preview).
The invention claimed is: 1. A method for converting an image contrast evolution of an object to a temperature contrast evolution, the method comprising: calculating a measurement region of interest temperature change ΔT; calculating a reference region of interest temperature change ΔT; calculating a reflection temperature change ΔT ref ; calculating the image contrast evolution C W t ; and converting, using a processor, the image contrast evolution C W t to the temperature contrast evolution C t according to the equation of C _ t ≅ [ 1 + 2 ( 1 ɛ - 1 ) Δ T refl ( Δ T + Δ T ref ) ] C _ W t wherein ε is the emissivity of the object. 2. The method of claim 1 , where calculating the image contrast evolution comprises: measuring a measurement region of interest temperature T; measuring a reference region of interest temperature T ref ; measuring a reflection temperature T refl ; and calculating the image contrast evolution according to the equation of: C _ W t ≅ ɛ ( ( T 4 - T 0 4 ) - ( T ref 4 - T ref 0 4 ) ) ( ɛ ( ( T 4 - T 4 0 ) + ( T ref 4 - T ref 0 4 ) ) + 2 ( 1 - ɛ ) ( T refl 4 - T refl 0 4 ) ) , wherein ε is the emissivity of the object, T 0 is the measurement region of interes
by investigating thermal conductivity (by calorimetry G01N25/20; by measuring change of resistance of an electrically-heated body G01N27/18) · CPC title
for sensing the radiant heat transfer of samples, e.g. emittance meter · CPC title
Transforming X-rays (cameras or camera modules for generating image signals from X-rays H04N23/30; circuitry of SSIS for transforming X-rays into image signals H04N25/30) · CPC title
for electromagnetic radiation in the invisible region, e.g. infrared · CPC title
Thermography (B41M5/20, B41M5/24 take precedence); {Marking by high energetic means, e.g. laser otherwise than by burning, and characterised by the material used (B23K takes precedence; thermographic or photothermographic systems using noble metal compounds G03C1/494)} · CPC title
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