Methods and systems for implementing adaptive FET drive voltage optimization for power stages of multi-phase voltage regulator circuits

US9787172B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9787172-B2
Application numberUS-201414470455-A
CountryUS
Kind codeB2
Filing dateAug 27, 2014
Priority dateJun 19, 2014
Publication dateOct 10, 2017
Grant dateOct 10, 2017

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Methods and systems are disclosed that may be employed to implement adaptive FET drive voltage optimization for voltage regulator (VR) integrated power stages (IPstages) that have different MOSFET RDS(on) characteristics to improve VR efficiency and current-sense accuracy.

First claim

Opening claim text (preview).

What is claimed is: 1. A system, comprising: at least one integrated power stage (IPstage) comprising a voltage input, a voltage output, one or more field effect transistor (FET) switching devices coupled between the voltage input and the voltage output to provide regulated power to the voltage output, and an IPstage identification (ID) recognition module having a power device identification signal output that is indicative of an identity of the at least one IPstage; at least one processing device coupled to control operation of the at least one IPstage, the at least one, processing device also being coupled to receive the power device identification signal output from the at least one IPstage; a power stage gate drive voltage regulator (VR) coupled between the at least one processing device and the at least one IPstage, the power stage gate drive VR being configured to provide a regulated gate drive voltage to drive the FET switching devices of the at least one IPstage; where the at least one processing device is configured to: receive the power device identification signal output from the at least one IPstage, determine a FET drive voltage control signal value based at least in part on the received power device identification signal, and provide the FET drive voltage control signal to control the power stage gate drive VR to provide a determined FET drive voltage to drive the FET switching devices of the at least one IPstage while controlling the at least one IPstage to provide power to the voltage output; where the at least one processing device coupled to control operation of the at least one IPstage is configured as a VR system controller; where the system further comprises memory accessible by the VR system controller having information indicative of a FET drive voltage control signal value that corresponds to the identified IPstage stored thereon together with information indicative of FET drive voltage control signal values for different types of IPstages; where the VR system controller is also coupled to receive the power device identification signal output from the at least one IPstage with the power stage gate drive VR being coupled between the VR system controller and the at least one IPstage; where the memory comprises external non-volatile memory (NVM) coupled to the VR system controller, the NVM storing information indicative of FET drive voltage control signal values corresponding to multiple different types of IPstages that include the at least one IPstage; and where the VR controller is further configured to: receive the power device identification signal output from the at least one IPstage, determine the identity of the at least one IPstage based on the received power device identification signal, retrieve information indicative of a FET drive voltage control signal value that corresponds to the identified IPstage from the NVM, and provide the indicated FET drive voltage control signal value to the power stage gate drive VR; and where the power stage gate drive VR is configured to provide a regulated gate drive voltage based on the value of the retrieved FET drive voltage control signal provided by the VR controller to drive a gate of the FET switching devices of the at least one IPstage while the VR controller controls the at least one IPstage to provide power to the voltage output. 2. A system, comprising: at least one integrated power stage (IPstage) comprising a voltage input, a voltage output, one or more field effect transistor (FET) switching devices coupled between the voltage input and the voltage output to provide regulated power to the voltage output, and an IPstage identification (ID) recognition module having a power device identification signal output that is indicative of an identity of the at least one IPstage; at least one processing device coupled to control operation of the at least one IPstage, the at least one processing device also being coupled to receive the power device identification signal output from the at least one IPstage; a power stage gate drive voltage regulator (VR) coupled between the at least one processing device and the at least one IPstage, the power stage gate drive VR being configured to provide a regulated gate drive voltage to drive the FET switching devices of the at least one IPstage; where the at least one processing device is configured to: receive the power device identification signal output from the at least one IPstage; determine a FET drive voltage control signal value based at least in part on the received power device identification signal, and provide the FET drive voltage control signal to control the power stage gate drive VR to provide a determined FET drive voltage to drive the FET switching devices of the at least one IPstage while controlling the at least one IP stage to provide power to the voltage output; where the at least one processing device coupled to control operation of the at least one IPstage is configured as a VR system controller; where the system further comprises memory accessible by the VR system controller having information indicative of a FET drive voltage control signal value that corresponds to the identified IPstage stored thereon together with information indicative of FET drive voltage control signal values for different types of IP stages; where the VR system controller is also coupled to receive the power device identification signal output from the at least one IPstage with the power stage gate drive VR being coupled between the VR system controller and the at least one IPstage; where the memory comprises an internal memory register of the VR system controller that stores information indicative of FET drive voltage control signal values corresponding to multiple different types of IPstages that include the at least one IPstage; and where the VR controller is further configured to: receive the power device identification signal output from the at least one IPstage, determine the identity of the at least one IPstage based on the received power device identification signal, retrieve information indicative of a FET drive voltage control signal value that corresponds to the identified IPstage from the internal memory register, and provide the indicated FET drive voltage control signal value to the power stage gate drive VR; and where the power stage gate drive VR is configured to provide a regulated gate drive voltage based on the value of the retrieved FET drive voltage control signal provided by the VR controller to drive the gate of the FET switching devices of the at least one IPstage while the VR controller controls the at least one IPstage to provide power to the VR system voltage output. 3. The system of claim 2 , where the FET switching devices comprise MOSFET switching devices. 4. A system, comprising: at least one integrated power stage (IPstage) comprising a voltage input, a voltage output, one or more field effect transistor (FET) switching devices coupled between the voltage input and the voltage output to provide regulated power to the voltage output, and an IPstage identification (ID) recognition module having a power device identification signal output that is indicative of an identity of the at least one IPstage; at least one processing device coupled to control operation of the at least one IPstage, the at least one processing device also being coupled to receive the power device identification signal output from the at least one IPstage; a power stage gate drive voltage regulator (VR) coupled between the at least one processing device and the at least one IPstage, the power stage gate drive VR being configured to provide a regulated gate drive voltage to drive the FET switching devices of the at least one IPstage; where the at least one processing device is configured to: recei

Assignees

Inventors

Classifications

  • H02M3/157Primary

    with digital control · CPC title

  • with a plurality of power processing stages connected in parallel · CPC title

  • Power supply means, e.g. regulation thereof (for memories G11C) · CPC title

  • H02M1/084Primary

    using a control circuit common to several phases of a multi-phase system · CPC title

  • Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9787172B2 cover?
Methods and systems are disclosed that may be employed to implement adaptive FET drive voltage optimization for voltage regulator (VR) integrated power stages (IPstages) that have different MOSFET RDS(on) characteristics to improve VR efficiency and current-sense accuracy.
Who is the assignee on this patent?
Luo Shiguo, Johnson Ralph H, Dell Products Lp
What technology area does this patent fall under?
Primary CPC classification H02M3/157. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).