Process for the production of an optically selective coating of a substrate for high temperature receiver solar devices and relative material obtained

US9786799B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9786799-B2
Application numberUS-201314427863-A
CountryUS
Kind codeB2
Filing dateSep 18, 2013
Priority dateSep 21, 2012
Publication dateOct 10, 2017
Grant dateOct 10, 2017

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A process for the production of an optically selective coating of a receiver substrate of a suitable material for solar receiver devices particularly suitable for operating at high temperatures, more specifically for receiver tubes of linear parabolic trough, which comprises: deposition of a layer reflecting infrared radiation consisting of a high-melting metal on a heated receiver substrate of a suitable material; annealing under the same temperature and pressure conditions as the deposition of the reflecting layer; deposition on the high-melting metal of one or more layers of metal-ceramic composite materials (CERMET), wherein the metal is W and the ceramic matrix is YPSZ (“Yttria-Partially Stabilized Zirconia”); deposition on the cermet of an antireflection layer; annealing under the same temperature and pressure conditions as the depositions of the cermet and antireflection layers.

First claim

Opening claim text (preview).

The invention claimed is: 1. A process for the production of an optically selective coating of a receiver substrate of suitable material for solar receivers suitable for operating at high temperatures comprising: deposition of a layer reflecting infrared radiation including W metal prevalently in the alpha phase on said heated receiver substrate at a temperature from 400° C. to 600° C.; annealing under the same temperature and pressure conditions as the deposition of the reflecting layer; deposition on the W metal prevalently in the alpha phase of one or more layers of metal-ceramic composite materials (CERMET), wherein the ceramic matrix includes YPSZ (“Yttria-Partially Stabilized Zirconia”); deposition on the cermet of an antireflection layer; annealing under the same temperature and pressure conditions as the depositions of the cermet and antireflection layers; wherein the reflecting layer of W is prepared without any previous deposition of a matching layer. 2. The process according to claim 1 , wherein said solar receivers are composed of receiver tubes of linear parabolic troughs. 3. The process according to claim 1 , wherein the antireflection layer includes YPSZ. 4. The process according to claim 1 , wherein the depositions of the reflecting layer, the cermet layer and antireflection layer are carried out by means of simultaneous DC/RF sputtering in a single chamber with movement of the substrate or receiver tube. 5. The process according to claim 1 , wherein the substrate or receiver tube includes stainless steel. 6. The process according to claim 5 , wherein the substrate or receiver tube is polished by a suitable abrasive paste with dimensions not greater than 0.20 microns. 7. The process according to claim 3 , wherein the infrared-reflecting layer including W is prepared by means of the following steps in sequence: initial vacuum level in the chamber sufficient for preventing oxygen contaminations; pre-sputtering of the W target; heating of the substrate; sputtering and low-velocity oscillation of the substrate above the source of W; annealing at the same deposition temperature and at the same sputtering pressure. 8. The process according to claim 1 , wherein the layer of W is prepared according to the following conditions: the initial vacuum level in the chamber at a pressure ranging from 1×10 −6 mbar to 5×10 −6 mbar; heating of the substrate or receiver tube from 400° C. to 600° C.; sputtering at a pressure ranging from 2.7×10 −2 mbar to 3.2×10 −2 mbar (Ar 6N), contemporaneously making the substrate oscillate above the DC source at low speed ranging from 0.1 cm/s to 1 cm/s; annealing for a time ranging from 0.5 h to 2 h at the same temperature and pressure as the sputtering; so as to obtain the layer of W, prevalently in alpha phase, with a thickness ranging from 200 nm to 900 nm. 9. The process according to claim 1 , wherein the layer of cermet deposited includes W dispersed on a nanometric scale, in an amount ranging from 30 to 70% by volume, in a matrix of YPSZ, in an amount ranging from 70% to 30% by volume. 10. The process according to claim 9 , wherein the layer of cermet is prepared by steps including the following steps in sequence: pre-sputtering of the YPSZ target; heating of the substrate or receiver tube; sputtering and oscillation of the substrate so as to expose it alternatingly to the W and YPSZ sources. 11. The process according to claim 1 , wherein a second layer of cermet including W dispersed on a nanometric scale is deposited, in an amount ranging from 20 to 60% by volume, in a matrix of YPSZ, in an amount ranging from 80 to 40% by volume, the volume percentage of W in said second layer being lower with respect to the layer of cermet previously deposited. 12. The process according to claim 11 , wherein the second layer of cermet is prepared by means of the following steps in sequence: heating of the substrate or receiver tube; sputtering and oscillation of the substrate so as to expose it alternatingly to the W and YPSZ sources. 13. The process according to claim 10 , wherein the layer of cermet is prepared by carrying out the pre-sputtering of the YPSZ target at a low power, and for a short time. 14. The process according to claim 10 , wherein the layer of cermet or a second layer of cermet is prepared according to the following conditions: heating of the substrate or receiver tube from 400° C. to 600° C.; sputtering at a pressure ranging from 2.7×10 −2 mbar to 3.2×10 −2 mbar (Ar 6N), contemporaneously making the substrate oscillate so as to expose it alternately to the DC and RF sources at a high velocity ranging from 5 cm/s to 15 cm/s. 15. The process according to claim 1 , wherein said antireflection layer (ARL) including YPSZ is deposited on the layer of cermet or on a second layer of cermet. 16. The process according to claim 15 , wherein the ARL is prepared by means of the following steps in sequence: heating of the substrate or receiver tube; sputtering and oscillation of the substrate at a low velocity above the RF source of YPSZ; annealing at the deposition temperature and at the same sputtering pressure for a time ranging from 0.2 h to 1 h. 17. The process according to claim 16 , wherein the ARL is prepared assuring the following conditions: heating of the substrate or receiver tube within the range of 400° C.-600° C. wherein the substrate or receiver tube includes stainless steel; sputtering at a pressure ranging from 2.7×10 −2 mbar to 3.2×10 −2 mbar (Ar 6N), contemporaneously making the substrate oscillate above the RF source at a low velocity ranging from 0.1 cm/s to 1 cm/s, or rotating and simultaneously translating the receiver tube, maintaining the YPSZ source fixed; annealing for a time ranging from 0.2 h to 1 h, at the same deposition temperature and at the same sputtering pressure. 18. An optically selective multilayer coating material of receiver substrates obtained by a method according to claim 1 comprising: an upper layer of antireflection material; a lower layer of material reflecting in the infrared including W prevalently in the alpha phase; at least one intermediate layer of metal-ceramic composite material (CERMET), wherein the metal includes W and the ceramic matrix includes YPSZ (“Yttria-Partially Stabilized Zirconia”), wherein the lower layer of W is prepared without any previous deposition of a matching layer. 19. The material according to claim 18 , wherein the antireflection material includes YPSZ, the W in the cermet ranging from 20% to 70% by volume and the ceramic YPSZ matrix ranging from 80% to 30% by volume. 20. The material according to claim 18 , characterized in that it has α absorptance and ε H hemispherical emissivity values, at a temperature of 550° C., of 0.893 and 0.087, respectively.

Assignees

Inventors

Classifications

  • Sputtering · CPC title

  • only coatings of metal elements only · CPC title

  • Cermets, e.g. mixtures of metal and one or more of carbides, nitrides, oxides or borides · CPC title

  • Solar heat collectors for receiving concentrated solar energy, e.g. receivers for solar power plants · CPC title

  • with a refractory ceramic layer, e.g. refractory metal oxide, ZrO2, rare earth oxides or a thermal barrier system comprising at least one refractory oxide layer · CPC title

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What does patent US9786799B2 cover?
A process for the production of an optically selective coating of a receiver substrate of a suitable material for solar receiver devices particularly suitable for operating at high temperatures, more specifically for receiver tubes of linear parabolic trough, which comprises: deposition of a layer reflecting infrared radiation consisting of a high-melting metal on a heated receiver substrate of…
Who is the assignee on this patent?
Eni Spa
What technology area does this patent fall under?
Primary CPC classification C23C14/0688. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 10 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).