Display device and method for fabricating the same
US-2024363819-A1 · Oct 31, 2024 · US
US9219254B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9219254-B2 |
| Application number | US-201313975259-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 23, 2013 |
| Priority date | Apr 26, 2013 |
| Publication date | Dec 22, 2015 |
| Grant date | Dec 22, 2015 |
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A method of forming nanocrystals includes loading a substrate into a chamber, applying a first voltage to a first target to form a thin film including a first metal compound on the substrate by sputtering, and applying a second voltage to a second target and forming nanocrystals in the thin film by sputtering.
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What is claimed is: 1. A method of forming nanocrystals, the method comprising: loading a substrate into a chamber; applying a first voltage to a first target to form a thin film comprising a first metal compound on the substrate by sputtering; after forming the thin film, applying a second voltage to a second target and forming nanocrystals in the thin film by sputtering; and wherein the second voltage is higher than the first voltage. 2. The method of claim 1 , wherein the first target and the second target comprise different metals. 3. The method of claim 1 , wherein the first metal compound is a metal oxide or a metal nitride. 4. The method of claim 1 , wherein a diameter of the nanocrystals is determined by a value of the voltage applied to the second target. 5. The method of claim 1 , wherein the forming of the nanocrystals comprises doping the thin film with a second metal compound from the second target. 6. The method of claim 5 , wherein a density of the nanocrystals is determined by a doping amount of the second metal compound. 7. The method of claim 1 , wherein the first metal compound is amorphous. 8. The method of claim 1 , wherein a thickness of the thin film is about 100 nm or less. 9. The method of claim 1 , wherein a process temperature in the chamber is about 100° C. or less. 10. The method of claim 1 , wherein a density of the thin film is increased by the formation of the nanocrystals. 11. The method of claim 1 , wherein optical bandgap energy of the thin film is increased by the formation of the nanocrystals. 12. The method of claim 1 , wherein the nanocrystals are formed by crystallization of at least one metal of the first metal compound and a second metal compound from the second target. 13. The method of claim 1 , wherein the first metal compound comprises at least one of SnO x , ZnO, TiO x , indium tin oxide (ITO), and WO x . 14. A thin film having nanocrystals formed by the method of forming nanocrystals of claim 1 . 15. A method of manufacturing an organic light-emitting display apparatus, the method comprising: loading a substrate comprising at least some components of the organic light-emitting display apparatus into a chamber; applying a first voltage to a first target to form a thin film comprising a first metal compound on the substrate by sputtering; after forming the thin film, applying a second voltage to a second target and forming nanocrystals in the thin film by sputtering; and wherein the second voltage is higher than the first voltage. 16. The method of claim 15 , wherein the organic light-emitting display apparatus comprises: a first electrode; an intermediate layer comprising an organic light-emitting layer; a second electrode; and an encapsulation layer; the electrodes and layers being on the substrate and the thin film having the nanocrystals formed therein is included in the encapsulation layer. 17. The method of claim 16 , wherein the encapsulation layer comprises an organic layer and an inorganic layer. 18. The method of claim 17 , wherein the inorganic layer comprises the thin film comprising the nanocrystals. 19. The method of claim 15 , wherein the thin film is amorphous.
using more than one target (C23C14/56 takes precedence) · CPC title
Oxides (C23C14/10 takes precedence) · CPC title
using more than one target (C23C14/56 takes precedence) · CPC title
Encapsulations · CPC title
Manufacture or treatment specially adapted for the organic devices covered by this subclass · CPC title
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