Metal cap apparatus and method

Patent metadata

Field	Value
Publication number	US-9786604-B2
Application number	US-201514937432-A
Country	US
Kind code	B2
Filing date	Nov 10, 2015
Priority date	Mar 12, 2013
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A method of forming a metal layer may include forming an opening in a substrate; forming a liner over sidewalls of the opening; filling the opening with a first metal; etching a top surface of the first metal to form a recessed top surface below a top surface of the substrate; and exposing the recessed top surface of the first metal to a solution, the solution containing a second metal different from the first metal, the exposing causing the recessed top surface of the first metal to attract the second metal to form a cap layer over the recessed top surface of the first metal.

First claim

What is claimed is:

1. A method of forming a metal layer, the method comprising:
forming an opening in a substrate;
forming a liner over sidewalls of the opening;
filling the opening with a first metal;
etching a top surface of the first metal to form a recessed top surface below a top surface of the substrate, the etching including exposing the top surface of the first metal to an etchant wherein a concentration of carbon in the etchant relative to a concentration of chlorine or fluorine is selected based upon a desired cross-sectional shape of the recessed top surface; and
exposing the recessed top surface of the first metal to a solution, the solution containing a second metal different from the first metal, the exposing causing the recessed top surface of the first metal to attract the second metal to form a cap layer over the recessed top surface of the first metal.

2. The method of claim 1 , wherein the solution is selected from a group consisting of a hypophosphite/second metal solution, a dimethylaminoborane/second metal solution, and combinations thereof.

3. The method of claim 1 , wherein the second metal has a reduction potential lower than a reduction potential of the first metal.

4. The method of claim 3 , wherein the second metal comprises at least one of tungsten or cobalt.

5. The method of claim 3 , wherein the first metal comprises copper.

6. The method of claim 1 , wherein the etching the top surface of the first metal to form the recessed top surface comprises exposing sidewalls of a portion of the liner.

7. A method of forming a metal layer, the method comprising:
exposing a top surface of a metal via to a metal solution, the metal via disposed in a substrate, the top surface of the metal via being substantially co-planar with a top surface of the substrate; and
displacing a first metal of the metal via with a second metal of the metal solution to form a cap layer, the first metal of the metal via being displaced into the metal solution, wherein the displacing causes the top surface of the metal via to migrate in a direction away from the metal solution, wherein an interface is formed between the top surface of the metal via and the cap layer; and
controlling the cross-sectional shape of the interface by introducing into the metal solution a material selected from the group consisting of carbon, oxygen, hydrogen, nitrogen, sulfur, chlorine and bromine.

8. The method of claim 7 , wherein the first metal is different from the second metal.

9. The method of claim 7 , wherein a reduction potential of the first metal is less than a reduction potential of the second metal.

10. The method of claim 7 , wherein the displacing the first metal of the metal via with the second metal of the metal solution causes the top surface of the metal via to have a predetermined shape, the predetermined shape being determined by an amount of a first material in the metal solution, wherein the first material is carbon, oxygen, hydrogen, nitrogen, sulfur, chlorine or bromine.

11. The method of claim 10 , wherein the first material is carbon, and wherein a concentration of carbon in the metal solution is greater than a concentration of the displaced first metal in the metal solution.

12. The method of claim 7 , wherein a top surface of the cap layer is substantially co-planar with the top surface of the substrate as the top surface of the metal via migrates in the direction away from the metal solution.

13. The method of claim 7 , wherein a liner comprising a third metal is disposed between the metal via and the substrate, and wherein displacing the first metal of the metal via with the second metal of the metal solution comprises displacing the first metal and not the third metal.

14. The method of claim 13 , wherein a reduction potential of the third metal is greater than a reduction potential of the second metal.

15. The method of claim 13 , wherein the first metal comprises copper, the second metal comprises silver, and the third metal comprises palladium.

16. The method of claim 7 , wherein the second metal comprises at least one of gold, silver, ruthenium or platinum.

17. A method comprising:
forming an opening in a substrate;
filling the opening with a first metal;
etching a top surface of the first metal to form a recessed top surface below a top surface of the substrate by exposing the top surface of the first metal to an etchant wherein a concentration of carbon in the etchant relative to a concentration of chlorine or fluorine is selected based upon a desired cross-sectional shape of the recessed top surface; and
exposing the top surface of the first metal to a metal solution having an ionic metal dissolved therein to form a capping layer of a second metal over the first metal.

18. The method of claim 17 , wherein the top surface of the first metal is a first distance from the top surface of the substrate before the exposing step and the top surface of the first metal is a second distance from the top surface of the substrate after the exposing step, the second distance being greater than the first distance.

19. The method of claim 17 , wherein the second metal has a higher reduction potential than the first metal.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Kao Chen-Yuan
• Su Hung-Wen
• Chang Chih-Yi
• Ou Yang Liang-Yueh

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P50/667

  by liquid etching only · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W20/435

  Cross-sectional shapes or dispositions of interconnections · CPC title

• H10W20/076

  in via holes or trenches · CPC title