Photoresist film placing method, semiconductor device manufacturing method, electro-optical device, and electronic device

Patent metadata

Field	Value
Publication number	US-9786501-B2
Application number	US-201514681344-A
Country	US
Kind code	B2
Filing date	Apr 8, 2015
Priority date	Apr 14, 2014
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A method for placing a resist film of a region having a small film thickness with good shape accuracy is provided. The method has processes of placing a photoresist film 15 on a substrate body 10 , exposing the photoresist film 15 using a halftone mask 30 having light transmittances of three or more tones, and developing the photoresist film 15 . The photoresist film 15 after the development has a first photoresist film 16 and a second photoresist film 17 that is thicker than the first photoresist film 16 . On the substrate body 10 after the development, the second photoresist film 17 is placed at a location where the second photoresist film 17 can be placed without removing the photoresist film 15.

First claim

What is claimed is:

1. An electro-optical device using a semiconductor device manufactured by a semiconductor device manufacturing method comprising:
forming a photoresist film on a substrate;
exposing the photoresist film using a photomask having regions with different light transmittances of three or more tones;
developing the exposed photoresist film; and
injecting a first predetermined impurity into the substrate, with the developed photoresist film as a mask,
wherein the three or more tones are a first tone that blocks exposure light used in the exposing, a second tone that mostly transmits the exposure light, and one or more third tones that transmit the exposure light at a predetermined ratio,
a region of the photomask with the first tone includes a region corresponding to a first region of the substrate which blocks the injection of the first predetermined impurity such that the first predetermined impurity is not injected into the first region of the substrate, and a region corresponding to a second region of the substrate which does not require the injection of the first predetermined impurity,
after the developing, a thickness of the photoresist film in the first region and the second region is larger than a thickness of the photoresist film in a third region exposed with the third tones, and
the thickness of the photoresist film in the third region is a thickness that blocks the first predetermined impurity at a ratio corresponding to the predetermined ratio, the semiconductor device manufacturing method further comprising
completely removing the photoresist film in the third region, and decreasing a thickness of the photoresist film in the first region and the second region without completely removing the photoresist film in the first region and the second region, and
injecting a second predetermined impurity into the substrate, with the photoresist film in the first region and the second region as a mask,
wherein after the decreasing of the thickness of the photoresist film in the first region and the second region, the thickness of the photoresist film in the first region and the second region blocks the injection of the second predetermined impurity.

2. The electro-optical device according to claim 1 , wherein a developer used in the developing is a new liquid in which components of the developer are mixed and which has not been used in development.

3. An electronic device comprising the electro-optical device according to claim 1 .

4. An electro-optical device using a semiconductor device manufactured by a semiconductor device manufacturing method comprising:
forming a photoresist film on a substrate;
exposing the photoresist film using a photomask having regions with different light transmittances of three or more tones;
developing the exposed photoresist film; and
injecting a first predetermined impurity into the substrate, with the developed photoresist film as a mask,
wherein the three or more tones are a first tone that blocks exposure light used in the exposing, a second tone that mostly transmits the exposure light, and one or more third tones that transmit the exposure light at a predetermined ratio,
a region of the photomask with the first tone includes a region corresponding to a first region of the substrate which blocks the injection of the first predetermined impurity such that the first predetermined impurity is not injected into the first region of the substrate, and a region corresponding to a second region of the substrate which does not require the injection of the first predetermined impurity,
after the developing, a thickness of the photoresist film in the first region and the second region is larger than a thickness of the photoresist film in a third region exposed with the third tones, and
the thickness of the photoresist film in the third region is a thickness that blocks the first predetermined impurity at a ratio corresponding to the predetermined ratio, the semiconductor device manufacturing method further comprising
completely removing the photoresist film in the third region, and decreasing a thickness of the photoresist film in the first region and the second region without completely removing the photoresist film in the first region and the second region, and
injecting a second predetermined impurity into the substrate, with the photoresist film in the first region and the second region as a mask,
wherein after the decreasing of the thickness of the photoresist film in the first region and the second region, the thickness of the photoresist film in the first region and the second region blocks the injection of the second predetermined impurity, and
a developer used in the developing is applied onto the substrate using a slit nozzle.

5. An electro-optical device
using a semiconductor device manufactured by a semiconductor device manufacturing method comprising:
forming a photoresist film on a substrate;
exposing the photoresist film using a photomask having regions with different light transmittances of three or more tones;
developing the exposed photoresist film; and
injecting a first predetermined impurity into the substrate, with the developed photoresist film as a mask,
wherein the three or more tones are a first tone that blocks exposure light used in the exposing, a second tone that mostly transmits the exposure light, and one or more third tones that transmit the exposure light at a predetermined ratio,
a region of the photomask with the first tone includes a region corresponding to a first region of the substrate which blocks the injection of the first predetermined impurity such that the first predetermined impurity is not injected into the first region of the substrate, and a region corresponding to a second region of the substrate which does not require the injection of the first predetermined impurity,
after the developing, a thickness of the photoresist film in the first region and the second region is larger than a thickness of the photoresist film in a third region exposed with the third tones, and
the thickness of the photoresist film in the third region is a thickness that blocks the first predetermined impurity at a ratio corresponding to the predetermined ratio, the semiconductor device manufacturing method further comprising
completely removing the photoresist film in the third region, and decreasing a thickness of the photoresist film in the first region and the second region without completely removing the photoresist film in the first region and the second region, and
injecting a second predetermined impurity into the substrate, with the photoresist film in the first region and the second region as a mask,
wherein after the decreasing of the thickness of the photoresist film in the first region and the second region, the thickness of the photoresist film in the first region and the second region blocks the injection of the second predetermined impurity, and
the developer is applied onto the substrate using puddle development or spin development.

Assignees

• Seiko Epson Corp

Inventors

• Sera Hiroshi
• Nakashima Yoshiki

Classifications

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• G03F7/0035

  Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• H01L21/0274 Primary

  Electricity · mapped topic

• H10D86/0231

  using masks, e.g. half-tone masks · CPC title