Synthesis and use of precursors for ALD of tellurium and selenium thin films

Patent metadata

Field	Value
Publication number	US-9783563-B2
Application number	US-201514882083-A
Country	US
Kind code	B2
Filing date	Oct 13, 2015
Priority date	Apr 25, 2008
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR 1 R 2 R 3 ) 2 are preferably used, wherein R 1 , R 2 , and R 3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.

First claim

We claim:

1. A process for making a Te or Se precursor, comprising:
forming a first product by reacting an elemental Group IA metal with a material comprising Te or Se; and
subsequently adding a second reactant comprising a silicon atom bound to a halogen atom, wherein the second reactant is selected from the group consisting of Et 3 SiCl, Me 3 SiCl, [R 1 R 2 R 3 Si] 3 —Si—X, [R 1 R 2 N] 3 —Si—X, [R 1 —O] 3 —Si—X, R 1 R 2 SiX with a double bond between silicon and one of the R groups, and X—Si—R—Si—X,
wherein R 1 , R 2 and R 3 are alkyl groups with one or more carbon atoms and X is a halogen, thereby forming one of (Et 3 Si) 2 Te, (Me 3 Si) 2 Te, Te(SiMe 2 t Bu) 2 , (Et 3 Si) 2 Se, (Me 3 Si) 2 Se, or Se(SiMe 2 t Bu) 2 .

2. The method of claim 1 , wherein forming a first product comprises using THF as a solvent.

3. The method of claim 1 , wherein the second reactant is Et 3 SiCl and Te(SiEt 3 ) 2 is formed.

4. The method of claim 1 , wherein the second reactant is Me 3 SiCl and Te(SiMe 3 ) 2 is formed.

5. The method of claim 1 , wherein the Group IA metal is Li.

6. The method of claim 1 , wherein the material comprising Te or Se is elemental Te or Se.

7. The method of claim 1 , wherein forming a first product includes using naphthalene as a catalyst.

8. The method of claim 1 , wherein the Group IA metal is in the form of a powder or flakes.

9. The method of claim 1 , wherein the material comprising Te or Se is elemental Te.

10. The method of claim 9 , wherein the elemental Te is provided in the form of a powder.

11. The method of claim 1 , wherein the material comprising Te or Se is elemental Se.

12. The method of claim 11 , wherein the elemental Se is provided in the form of a powder.

13. A process for synthesizing (Et 3 Si) 2 Te, (Me 3 Si) 2 Te, Te(SiMe 2 tBu) 2 , (Et 3 Si) 2 Se, (Me 3 Si) 2 Se, or Se(SiMe 2 tBu) 2 comprising:
forming a first product by reacting a first reactant that is an elemental Group IA metal with a second reactant comprising Te or Se, wherein forming comprises adding naphtalene to a mixture of the first reactant and the second reactant; and
subsequently adding a third reactant comprising a silicon atom bound to a halogen atom, wherein the third reactant comprises R 1 R 2 R 3 SiX, wherein R 1 , R 2 and R 3 are alkyl groups with one or more carbon atoms and X is a halogen, thereby forming (Et 3 Si) 2 Te, (Me 3 Si) 2 Te, Te(SiMe 2 tBu) 2 , (Et 3 Si) 2 Se, (Me 3 Si) 2 Se, or Se(SiMe 2 tBu) 2 .

14. The method of claim 13 wherein forming a first product includes using THF as a solvent.

15. The method of claim 13 , wherein the third reactant is Et 3 SiCl and (Et 3 Si) 2 Te is formed.

16. The method of claim 13 , wherein the third reactant is Me 3 SiCl and (Me 3 Si) 2 Te is formed.

17. The method of claim 13 , wherein the elemental Group IA metal is Li.

18. The method of claim 13 , wherein the elemental Group IA metal is in the form of a powder or flakes.

19. The method of claim 13 , wherein the second reactant is elemental Te or Se.

20. The method of claim 19 , wherein the elemental Te or Se is provided as a powder.

Assignees

• Asm Int Nv

Inventors

• Pore Viljami
• Hatanpaa Timo
• Ritala Mikko
• Leskelä Markku

Classifications

• H10P14/3432

  Tellurides · CPC title

• H10P14/3431

  Selenides · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/306 Primary

  AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te · CPC title