Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Patent metadata

Field	Value
Publication number	US-9783558-B2
Application number	US-201514798775-A
Country	US
Kind code	B2
Filing date	Jul 14, 2015
Priority date	Oct 10, 2003
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

First claim

What is claimed is:

1. A silicon compound of the formula:
(R 1 R 2 N) 2 HSi—SiR 3 n H 3-n

wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H, C 1 -C 4 alkyl, amino, silyl groups (-SiH 3 ) and hydrocarbyl derivatives of silyl groups; and 0≦n≦3.

2. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently a hydrocarbyl derivative of a silyl group.

3. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 are the same.

4. The silicon compound of claim 3 , wherein R 1 , R 2 and R 3 are selected from C 1 -C 4 alkyl.

5. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H and C 1 -C 4 alkyl.

6. The silicon compound of claim 1 , wherein R 1 , R 2 or R 3 is a silyl group.

7. The silicon compound of claim 1 , wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently a silyl group or a hydrocarbyl derivative of a silyl group.

8. A composition comprising a silicon compound of the formula:
(R 1 R 2 N) 2 HSi—SiR 3 n H 3-n

wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H, C 1 -C 4 alkyl, amino, silyl groups (-SiH 3 ) and hydrocarbyl derivatives of silyl groups; and 0≦n≦3, and
wherein said silicon compound is in a vapor form.

9. The composition of claim 8 , further comprising an inert carrier gas.

10. The composition of claim 9 , wherein said inert carrier gas is selected from among helium, argon and nitrogen.

11. The composition of claim 8 , further comprising a co-reactant.

12. The composition of claim 11 , wherein the co-reactant is selected from among ammonia, oxygen, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.

13. The composition of claim 8 , further comprising a solvent.

14. The composition of claim 13 , wherein the solvent comprises a hydrocarbon solvent.

15. The composition of claim 14 , wherein the hydrocarbon solvent comprises a solvent selected from the group consisting of alkanes, alkenes, alkynes, cycloalkanes, aromatic compounds, benzene, benzene derivatives, alkanols and amines.

16. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under chemical vapor deposition conditions, at a temperature below 600° C., with a vapor of a silicon compound of the formula:
(R 1 R 2 N) 2 HSi—SiR 3 n H 3-n

wherein R 1 , R 2 and R 3 may be the same as or different from each other and each is independently selected from the group consisting of H, C 1 -C 4 alkyl, amino, silyl groups (-SiH 3 ) and hydrocarbyl derivatives of silyl groups; and 0≦n≦3.

17. The method of claim 16 , wherein R 1 , R 2 and R 3 are selected from the group consisting of C 1 -C 4 alkyl.

18. The method of claim 16 , wherein the temperature is below 550° C.

19. The method of claim 16 , wherein the vapor further comprises a co-reactant.

20. The method of claim 19 , wherein the co-reactant is selected from among ammonia, oxygen, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.

Assignees

• Entegris Inc

Inventors

• Wang Ziyun
• Xu Chongying
• Hendrix Bryan
• Roeder Jeffrey
• Chen Tianniu
• Baum Thomas H

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• C07F7/10 Primary

  containing nitrogen {having a Si-N linkage} · CPC title

• H01L21/02271

  Electricity · mapped topic