Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films

Patent metadata

Field	Value
Publication number	US-9102693-B2
Application number	US-201414333536-A
Country	US
Kind code	B2
Filing date	Jul 17, 2014
Priority date	Oct 10, 2003
Publication date	Aug 11, 2015
Grant date	Aug 11, 2015

Abstract

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si 3 N 4 ), and a method of depositing the silicon precursors on substrates using low temperature (e.g., <550° C.) chemical vapor deposition processes, for fabrication of ULSI devices and device structures.

First claim

What is claimed is:

1. A silicon compound of the formula:
(R 2 R 3 N) 3-x R 1 x Si—SiR 1 x (NR 2 R 3 ) 3-x

wherein:
R 1 , R 2 , and R 3 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl and C 3 -C 6 cyclo alkyl; and
x is 1 or 2.

2. The silicon compound of claim 1 , wherein x is 2.

3. The silicon compound of claim 1 , wherein R 1 , R 2 , and R 3 are the same.

4. The silicon compound of claim 1 , wherein R 1 , R 2 , and R 3 are selected from the group consisting of C 1 -C 5 alkyl.

5. The silicon compound of claim 1 , of the formula Me 2 (NEt 2 )Si—Si(NEt 2 )Me 2 , Me 2 (NEtMe)Si—Si(NEtMe)Me 2 , or Me 2 (NMe 2 )Si—Si(NMe 2 )Me 2 , wherein Me is methyl and Et is ethyl.

6. The silicon compound of claim 1 , of the formula Me 2 (NEt 2 )Si—Si(NEt 2 )Me 2 .

7. The silicon compound of claim 1 , of the formula Me 2 (NEtMe)Si—Si(NEtMe)Me 2 .

8. The silicon compound of claim 1 , of formula Me 2 (NMe 2 )Si—Si(NMe 2 )Me 2 .

9. A composition comprising a silicon compound of the formula:
(R 2 R 3 N) 3-x R 1 x Si—SiR 1 x (NR 2 R 3 ) 3-x

wherein:
R 1 , R 2 , and R 3 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl and C 3 -C 6 cycloalkyl; and
x is 1 or 2, wherein said silicon compound is in a vapor form.

10. The composition of claim 9 , further comprising an inert carrier gas.

11. The composition of claim 10 , wherein said inert gas is selected from among helium, argon and nitrogen.

12. The composition of claim 9 , further comprising a co-reactant.

13. The composition of claim 12 , wherein the co-reactant is selected from among ammonia, oxygen, nitric oxide, monoalkylamines, dialkylamines, and trialkyl amines, and mixtures of two or more thereof.

14. The composition of claim 9 , further comprising a solvent.

15. The composition of claim 14 , wherein the solvent comprises a hydrocarbon solvent.

16. The composition of claim 15 , wherein the hydrocarbon solvent is selected from the group consisting of alkanes, alkenes, alkynes, cycloalkanes, aromatic compounds, benzene, benzene derivatives, alkanols and amines.

17. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under chemical vapor deposition conditions, at a temperature below 600° C., with a vapor of a silicon compound of the formula:
(R 2 R 3 N) 3-x R 1 x Si—SiR 1 x (NR 2 R 3 ) 3-x

wherein:
R 1 , R 2 , and R 3 may be the same as or different from one another and each is independently selected from the group consisting of H, C 1 -C 5 alkyl and C 3 -C 6 cycloalkyl; and
x is 1 or 2.

18. The method of claim 17 , wherein R 1 , R 2 , and R 3 are selected from the group consisting of C 1 -C 5 alkyl.

19. The method of claim 17 , wherein the silicon compound is of the formula Me 2 (NEt 2 )Si—Si(NEt 2 )Me 2 , Me 2 (NEtMe)Si—Si(NEtMe)Me 2 , or Me 2 (NMe 2 )Si—Si(NMe 2 )Me 2 , wherein Me is methyl and Et is ethyl.

20. The method of claim 17 , wherein the temperature is below 550° C.

Assignees

• Entegris Inc

Inventors

• Wang Ziyun
• Xu Chongying
• Hendrix Bryan
• Roeder Jeffrey
• Chen Tianniu
• Baum Thomas H

Classifications

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• C07F7/10 Primary

  containing nitrogen {having a Si-N linkage} · CPC title

• H01L21/02271

  Electricity · mapped topic